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Charge trapping characteristics of Al2O3/Al-rich Al2O3/SiO2 stacked films fabricated by radio-frequency magnetron co-sputteringNAKATA, Shunji; MAEDA, Ryoji; KAWAE, Takeshi et al.Thin solid films. 2011, Vol 520, Num 3, pp 1091-1095, issn 0040-6090, 5 p.Article

Horizontal transmission of hepatitis B from a father to two brothersSHIMIZU, Tatsuo; HORIUCHI, Toshiyuki; KAMITSUJI, Hidekazu et al.European journal of pediatrics. 2003, Vol 162, Num 11, pp 804-805, issn 0340-6199, 2 p.Article

A large discrepancy between CPM and ESR defect densities in light-soaked a-Si :HSHIMIZU, Tatsuo; SUGIYAMA, Hidekazu; KUMEDA, Minoru et al.Solar energy materials and solar cells. 2001, Vol 66, Num 1-4, pp 203-207, issn 0927-0248Conference Paper

Doppler echocardiography and mr angiography for diagnosis of systolic murmurs in pulmonary sequestrationSHIMIZU, Tatsuo; TAMAI, Hiroshi; OWARI, Mitsugu et al.The Journal of pediatrics. 2004, Vol 145, Num 5, issn 0022-3476, p. 713Article

Modeling of pH response in continuous anaerobic acidogenesis by an artificial neural networkHORIUCHI, Jun-Ichi; KIKUCHI, Shuntaro; KOBAYASHI, Masayoshi et al.Biochemical engineering journal. 2001, Vol 9, Num 3, pp 199-204, issn 1369-703XArticle

Neutral dangling bonds may not be the dominant recombination centers for photoconductivity in hot-wire a-Si:HDAXING HAN; GUOZHEN YUE; QI WANG et al.Thin solid films. 2003, Vol 430, Num 1-2, pp 141-144, issn 0040-6090, 4 p.Conference Paper

A rigid band model for recombination in a-Si alloysWANG, T.-H; SEARLE, T. M.Journal of non-crystalline solids. 1996, Vol 198200, pp 280-283, issn 0022-3093, 1Conference Paper

Amorphous silicon optical spectrum analyzer for the visible rangeCAPUTO, D; IRRERA, F; PALMA, F et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 1172-1175, issn 0022-3093, 2Conference Paper

Anomalous relaxation in fractal and disordered systemsFUJIWARA, S; YONEZAWA, F.Journal of non-crystalline solids. 1996, Vol 198200, pp 507-511, issn 0022-3093, 1Conference Paper

Atomic force microscopy and scanning tunneling microscopy studies on the growth mechanism of a-Si:H film on graphite substrateMATSUSE, M; TSUBOI, S; ARAKANE, T et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 787-791, issn 0022-3093, 2Conference Paper

Comparison between electrical properties and electronic structure of variously-prepared germanium selenide filmsADRIAENSSENS, G. J; GHEORGHIU, A; SEMENAUD, C et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 675-679, issn 0022-3093, 2Conference Paper

Density of states and photoconductivity light degradation in a-Si:H at different temperaturesMARIUCCI, L; SINNO, G; MINARINI, C et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 482-485, issn 0022-3093, 1Conference Paper

Device-grade SiGe:H alloys prepared by nanometer deposition/H2 plasma annealing methodsXU, J; SHIBA, K; MIYAZAKI, S et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 582-586, issn 0022-3093, 1Conference Paper

Direct determination of the quadratic electro-optic coefficient in an a-Si:H based waveguideZELIKSON, M; WEISER, K; CHACK, A et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 107-110, issn 0022-3093, 1Conference Paper

Distribution of lifetime of photoluminescence in band-edge modulated a-Si1-xNx:H filmsOGIHARA, C; ISHIMURA, H; KINOSHITA, T et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 255-258, issn 0022-3093, 1Conference Paper

Electric field heated electrons in a-Si:H : new featuresJUSKA, G; ARLAUSKAS, K; KOCKA, J et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 202-205, issn 0022-3093, 1Conference Paper

Electrical characterization of visible emitting electroluminescent Schottky diodes based on n-type porous silicon and on highly doped n-type porous polysiliconLAZAROUK, S; BONDARENKO, V; JAGUIRO, P et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 973-976, issn 0022-3093, 2Conference Paper

Electronic structure and light induced degradation of amorphous silicon-germanium alloysZHONG, F; CHEN, C.-C; COHEN, J. D et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 572-576, issn 0022-3093, 1Conference Paper

Enhanced optical absorption in microcrystalline siliconBECK, N; MEIER, J; FRIC, J et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 903-906, issn 0022-3093, 2Conference Paper

Enhancement of the deposition rate of a-Si:H by introduction of an electronegative molecule into a silane dischargeIKEDA, T; OSBORNE, I. S; HATA, N et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 987-990, issn 0022-3093, 2Conference Paper

Equilibration in amorphous silicon nitride alloysDUNNETT, B; GIBSON, R. A. G; JONES, D. J et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 601-604, issn 0022-3093, 1Conference Paper

Hydrogen in siliconDAVIES, E. A.Journal of non-crystalline solids. 1996, Vol 198200, pp 1-10, issn 0022-3093, 1Conference Paper

Improved stability of a-Si:H fabricated from SiH2Cl2 by ECR hydrogen plasmaAZUMA, M; YOKOI, T; SHIMIZU, I et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 419-422, issn 0022-3093, 1Conference Paper

Interpretation of mechanism determining field effect mobility in a-Si:H TFT based on surface reaction modelCHIDA, Y; KONDO, M; MATSUDA, A et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 1121-1124, issn 0022-3093, 2Conference Paper

Intracavity photothermal measurements of ultralow absorptionHAJIEV, F; MALINOVSKY, I; UGUR, H et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 103-106, issn 0022-3093, 1Conference Paper

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