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MEASUREMENT OF THE IONISATION COEFFICIENTS IN NITROGEN AND METHANE MIXTURESSHIMOZUMA M; TAGASHIRA H.1981; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1981; VOL. 14; NO 10; PP. 1783-1789; BIBL. 19 REF.Article

MEASUREMENT OF THE IONISATION AND ATTACHMENT COEFFICIENTS IN SF6 AND HELIUM MIXTURESSHIMOZUMA M; TAGASHIRA H.1983; JOURNAL OF PHYSICS D: APPLIED PHYSICS; ISSN 0022-3727; GBR; DA. 1983; VOL. 16; NO 7; PP. 1283-1291; BIBL. 16 REF.Article

THE IONISATION AND ATTACHMENT COEFFICIENTS IN CARBON TETRAFLUORIDESHIMOZUMA M; TAGASHIRA H; HASEGAWA H et al.1983; JOURNAL OF PHYSICS D: APPLIED PHYSICS; ISSN 0022-3727; GBR; DA. 1983; VOL. 16; NO 6; PP. 971-976; BIBL. 13 REF.Article

MEASUREMENT OF THE IONISATION AND ATTACHMENT COEFFICIENTS IN SF6 AND AIR MIXTURESSHIMOZUMA M; ITOH H; TAGASHIRA H et al.1982; JOURNAL OF PHYSICS D: APPLIED PHYSICS; ISSN 0022-3727; GBR; DA. 1982; VOL. 15; NO 12; PP. 2443-2449; BIBL. 21 REF.Article

Measurement of the ionisation and attachment coefficients in monosilane and disilaneSHIMOZUMA, M; TAGASHIRA, H.Journal of physics. D, Applied physics (Print). 1986, Vol 19, Num 9, pp L179-L182, issn 0022-3727Article

MEASUREMENT OF THE EFFECTIVE IONISATION COEFFICIENT AND THE STATIC BREAKDOWN VOLTAGE IN SF6 AND NITROGEN MIXTURESITOH H; SHIMOZUMA M; TAGASHIRA H et al.1979; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1979; VOL. 12; NO 12; PP. 2167-2172; BIBL. 12 REF.Article

PREBREAKDOWN CURRENT GROWTH AND THE IONIZATION COEFFICIENTS IN HYDROGEN.SHIMOZUMA M; SAKAI Y; TAGASHIRA H et al.1977; J. PHYS. D; G.B.; DA. 1977; VOL. 10; NO 12; PP. 1671-1682; BIBL. 19 REF.Article

Boltzmann equation analysis of electron swarm behaviour in monosilaneOHMORI, Y; SHIMOZUMA, M; TAGASHIRA, H et al.Journal of physics. D, Applied physics (Print). 1986, Vol 19, Num 6, pp 1029-1040, issn 0022-3727Article

Electron swarm parameters in water vapourHASEGAWA, H; DATE, H; SHIMOZUMA, M et al.Journal of physics. D, Applied physics (Print). 2007, Vol 40, Num 8, pp 2495-2498, issn 0022-3727, 4 p.Article

Annealing behavior of HF-treated GaAs capped with SiO2 films prepared by 50-Hz plasma-assisted chemical vapor depositionHASHIZUME, T; HASEGAWA, H; TOCHITANI, G et al.Japanese journal of applied physics. 1992, Vol 31, Num 12A, pp 3794-3800, issn 0021-4922, 1Article

Boltzmann equation analysis of electron swarm behaviour in nitrogenOHMORI, Y; SHIMOZUMA, M; TAGASHIRA, H et al.Journal of physics. D, Applied physics (Print). 1988, Vol 21, Num 5, pp 724-729, issn 0022-3727Article

Stable passivation systems for GaAs prepared by room-temperature deposition of SiO2 filmsHASHIZUME, T; YOSHINO, M; ISHIKAWA, M et al.Japanese journal of applied physics. 1994, Vol 33, Num 7A, pp 3887-3888, issn 0021-4922, 1Article

Properties of hydrogenated amorphous silicon films prepared by low-frequency (50 Hz) plasma-enhanced chemical-vapor depositionTOCHITANI, G; SHIMOZUMA, M; TAGASHIRA, H et al.Journal of applied physics. 1992, Vol 72, Num 1, pp 234-238, issn 0021-8979Article

Boltzmann equation analysis of electron swarm behaviour in methaneOHMORI, Y; KITAMORI, K; SHIMOZUMA, M et al.Journal of physics. D, Applied physics (Print). 1986, Vol 19, Num 3, pp 437-455, issn 0022-3727Article

Deposition of silicon oxide films from TEOS by low frequency plasma chemical vapor depositionTOCHITANI, G; SHIMOZUMA, M; TAGASHIRA, H et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1993, Vol 11, Num 2, pp 400-405, issn 0734-2101Article

Optical emission diagnostics of H2+CH4 50-Hz-13.56-MHz plasmas for chemical vapor depositionSHIMOZUMA, M; TOCHITANI, G; TAGASHIRA, H et al.Journal of applied physics. 1991, Vol 70, Num 2, pp 645-648, issn 0021-8979Article

Measurement of the effective ionisation coefficient in SF6 and air mixtures at high E/p20 valuesHASEGAWA, H; TANEDA, A; MURAI, K et al.Journal of physics. D, Applied physics (Print). 1988, Vol 21, Num 12, pp 1745-1749, issn 0022-3727Article

The drift velocity and longitudinal diffusion coefficient of electrons in nitrogen and carbon dioxide form 20 to 1000 TdHASEGAWA, H; DATE, H; SHIMOZUMA, M et al.Journal of physics. D, Applied physics (Print). 1996, Vol 29, Num 10, pp 2664-2667, issn 0022-3727Article

Room temperature deposition of silicon nitride films using very low frequency (50 Hz) plasma CVDSHIMOZUMA, M; KITAMORI, K; OHNO, H et al.Journal of electronic materials. 1985, Vol 14, Num 5, pp 573-586, issn 0361-5235Article

Deposition of SiC films by ion-enhanced plasma chemical vapor deposition using tetramethylsilane+H2YOSHINO, M; SHIMOZUMA, M; DATE, H et al.Thin solid films. 2005, Vol 492, Num 1-2, pp 207-211, issn 0040-6090, 5 p.Article

Hydrogenated amorphous carbon films deposited by low-frequency plasma chemical vapor deposition at room temperatureSHIMOZUMA, M; TOCHITANI, G; OHNO, H et al.Journal of applied physics. 1989, Vol 66, Num 1, pp 447-449, issn 0021-8979, 3 p.Article

Measurement of the ionisation coefficients in binary and ternary mixtures of CO2, N2 and HeHASEGAWA, H; SATO, Y; MURAI, K et al.Journal of physics. D, Applied physics (Print). 1985, Vol 18, Num 7, pp 1361-1370, issn 0022-3727Article

Measurement of electron transport coefficients in tetramethylsilane vapourYOSHIDA, Kosaku; MORI, S; KISHIMOTO, Y et al.Journal of physics. D, Applied physics (Print). 2005, Vol 38, Num 12, pp 1918-1922, issn 0022-3727, 5 p.Article

Dominant plasma species for TiN film formation by plasma CVDRODRIGO, A. B; LASORSA, C; SHIMOZUMA, M et al.Journal of physics. D, Applied physics (Print). 1997, Vol 30, Num 17, pp 2397-2402, issn 0022-3727Article

Case Report. Onychomycosis due to Chaetomium globosum successfully treated with itraconazoleHATTORI, N; ADACHI, M; KANEKO, T et al.Mycoses. 2000, Vol 43, Num 1-2, pp 89-92, issn 0933-7407Article

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