OCTAHEDRAL PRECIPITATES IN HIGH TEMPERATURE ANNEALED CZOCHRALSKI-GROWN SILICONSHIMURA F.1981; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1981; VOL. 54; NO 3; PP. 588-591; BIBL. 13 REF.Article

REDISSOLUTION OF PRECIPITATED OXYGEN IN CZOCHRALSKI-GROW SILICON WAFERSSHIMURA F.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 12; PP. 987-989; BIBL. 10 REF.Article

Carbon enhancement effect on oxygen precipitation in Czochralski siliconSHIMURA, F.Journal of applied physics. 1986, Vol 59, Num 9, pp 3251-3254, issn 0021-8979Article

EVALUATION PAR RADIORECEPTEUR DES CONCENTRATIONS SERIQUES DE COLECALCIFEROL DIHYDROXY-1,25 DU CYTOSOL INTESTINAL DE POULETSHIMURA F; TAMURA M.1978; VITAMINS; JPN; DA. 1978; VOL. 52; NO 4; PP. 173-181; ABS. ENG; BIBL. 13 REF.Article

Thermally induced stacking faults distributed inhomogeneously in Czochralski silicon crystalsSHIMURA, F.Journal of applied physics. 1992, Vol 72, Num 4, pp 1642-1644, issn 0021-8979Article

OXYGEN PRECIPITATION FACTORS IN SILICONSHIMURA F; TSUYA H.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 5; PP. 1062-1066; BIBL. 23 REF.Article

CRYSTAL GROWTH OF A NEW PHASE NI₅TIO₇ AND ITS CRYSTALLOGRAPHIC PROPERTIES.SHIMURA F; KAWAMURA T.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; NO 7; PP. 1403-1404; BIBL. 2 REF.Article

CRYSTAL GROWTH AND FUNDAMENTAL PROPERTIES OF LINB_1-YTA_YO₃.SHIMURA F; FUJINO Y.1977; J. CRYST. GROWTH; NETHERL.; DA. 1977; VOL. 38; NO 3; PP. 293-302; BIBL. 21 REF.Article

THERMALLY INDUCED DEFECT BEHAVIOR AND EFFECTIVE INTRINSIC GETTERING SINK IN SILICON WAFERSSHIMURA F; TSUYA H; KAWAMURA T et al.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 7; PP. 1579-1583; BIBL. 16 REF.Article

INTERACTION OF 1ALPHA ,24-DIHYDROXYVITAMIN D₃ WITH THE CHICK INTESTINAL 1ALPHA ,25-DIHYDROXYVITAMIN D₃ RECEPTOR SYSTEMSHIMURA F; MORIUCHI S; HOSOYA N et al.1979; J. NUTRIT. SCI. VITAMINOL.; JPN; DA. 1979; VOL. 25; NO 5; PP. 399-409; BIBL. 17 REF.Article

EFFET DE LYSINE ET VITAMINE D SUR L'ABSORPTION INTESTINALE DE CASHIMURA F; MORIUCHI S; HOSOYA N et al.1975; J. JAP. SOC. FOOD NUTRIT.; JAP.; DA. 1975; VOL. 28; NO 3; PP. 159-163; ABS. ANGL.; BIBL. 15 REF.Article

TRANSFORMATION DU DEHYDRO-7 CHOLESTEROL EN CHOLESTEROL ET SON INHIBITION PAR LA BOXIDINE ET AY-9944SHIMURA F; OIZUMI K; HOSOYA N et al.1975; VITAMINS; JAP.; DA. 1975; VOL. 49; NO 3; PP. 91-97; ABS. ANGL.; BIBL. 18REF.Article

HETEROGENOUS DISTRIBUTION OF INTERSTITIAL OXYGEN IN ANNEALED CZOCHRALSKI-GROWN SILICON CRYSTALSSHIMURA F; OHNISHI Y; TSUYA H et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 11; PP. 867-870; BIBL. 15 REF.Article

COMPETENCE OF 1ALPHA ,25-DIHYDROXYVITAMIN D₃ RECEPTOR SYSTEM IN EMBRYONIC CHICK INTESTINESHIMURA F; OKU T; HOSOYA N et al.1980; J. NUTRIT. SCI. VITAMINOL.; JPN; DA. 1980; VOL. 26; NO 1; PP. 15-23; BIBL. 15 REF.Article

SURFACE- AND INNER-MICRODEFECTS IN ANNEALED SILICON WAFER CONTAINING OXYGENSHIMURA F; TSUYA H; KAWAMURA T et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 1; PP. 269-273; BIBL. 17 REF.Article

PRECIPITATION AND REDISTRIBUTION OF OXYGEN IN CZOCHRALSKI-GROWN SILICONSHIMURA F; TSUYA H; KAWAMURA T et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 5; PP. 483-486; BIBL. 12 REF.Article

REDUCTION OF SAUCER PIT MICRODEFECTS IN EPITAXIAL SILICON WAFER BY INTRINSIC GETTERINGTSUYA H; TANNO K; SHIMURA F et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 8; PP. 658-660; BIBL. 11 REF.Article

Hydrogen enhanced out-diffusion of oxygen in Czochralski siliconZHONG, L; SHIMURA, F.Journal of applied physics. 1993, Vol 73, Num 2, pp 707-710, issn 0021-8979Article

Investigation of charge trapping centers in silicon nitride films with a laser-microwave photoconductive methodLEI ZHONG; SHIMURA, F.Applied physics letters. 1993, Vol 62, Num 6, pp 615-617, issn 0003-6951Article

The stability of thin interfacial SiO₂ layers in directly bonded Czochralski and float-zone silicon wafer pairsLING, L; SHIMURA, F.Journal of the Electrochemical Society. 1993, Vol 140, Num 1, pp 252-255, issn 0013-4651Article

Dependence of lifetime on surface concentration of copper and iron in silicon wafersZHONG, L; SHIMURA, F.Applied physics letters. 1992, Vol 61, Num 9, pp 1078-1080, issn 0003-6951Article

DEVELOPMENT OF 1,25-DIHYDROXYCHOLECALCIFEROL RECEPTOR IN THE DUODENAL CYTOSOL OF CHICK EMBRYO.OKU T; SHIMURA F; MORIUCHI S et al.1976; ENDOCRINOL. JAP.; JAP.; DA. 1976; VOL. 23; NO 5; PP. 375-381; BIBL. 24 REF.Article

PLAINTES NON IDENTIFIEES ET COMPORTEMENT ALIMENTAIRETAKASE S; MORIMOTO A; SHIMURA F et al.1975; J. JAP. SOC. FOOD NUTRIT.; JAP.; DA. 1975; VOL. 28; NO 6; PP. 309-317; ABS. ANGL.; BIBL. 10 REF.Article

Noncontact characterization for carrier recombination center related to Si-SiO₂ interfaceKATAYAMA, K.-I; SHIMURA, F.Japanese journal of applied physics. 1993, Vol 32, Num 3B, pp L395-L397, issn 0021-4922, 2Article

Nitrogen effect on oxygen precipitation in Czochralski siliconSHIMURA, F; HOCKETT, R. S.Applied physics letters. 1986, Vol 48, Num 3, pp 224-226, issn 0003-6951Article