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au.\*:("SHIN BK")

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CARBON-ION-IMPLANTED GALLIUM ARSENIDE.SHIN BK.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 7; PP. 438-440; BIBL. 11 REF.Article

ELECTRICAL PROPERTIES OF TE-IMPLANTED GAAS.SHIN BK.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 8; PP. 3612-3617; BIBL. 30 REF.Article

SWITCHING AND MEMORY EFFECTS IN PHOSPHORUS-ION-IMPLANTED ZNSE DEVICES.SHIN BK; PARK YS.1974; PROC. I.E.E.E.; U.S.A.; DA. 1974; VOL. 62; NO 4; PP. 538-540; BIBL. 13 REF.Article

AN ABRUPT DOPANT PROFILE IN GAAS PRODUCED BY TE IMPLANTATION.SHIN BK; PARK YS.1976; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1976; VOL. 123; NO 10; PP. 1588-1589; BIBL. 17 REF.Article

INJECTION ELECTROLUMINESCENCE IN PHOSPHOROUS-ION-IMPLANTED ZNSE P-N JUNCTION DIODES.PARK YS; SHIN BK.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 3; PP. 1444-1446; BIBL. 11 REF.Article

YELLOW-LIGHT-EMITTING ZNSE DIODEPARK YS; GEESNER CR; SHIN BK et al.1972; APPL. PHYS. LETTERS; U.S.A.; DA. 1972; VOL. 21; NO 12; PP. 567-569; BIBL. 8 REF.Serial Issue

ELECTRICAL CHARACTERISTICS OF AL-IMPLANTED ZNSE.SHIN BK; PARK YS; LOOK DC et al.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 24; NO 9; PP. 435-436; BIBL. 12 REF.Article

TERNARY III-V SOLAR CELLS FOR MULTICOLOR APPLICATIONSFRAAS LM; SHIN BK; CAPE JA et al.1982; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 16/1982-09-27/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1982; PP. 655-662; BIBL. 11 REF.Conference Paper

DUAL IMPLANTATION OF C+ AND GA+ IONS INTO GAAS.SHIN BK; EHRET JE; PARK YS et al.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 5; PP. 2988-2990; BIBL. 13 REF.Article

HALL-EFFECT MEASUREMENTS IN CD-IMPLANTED GAAS.SHIN BK; LOOK DC; PARK YS et al.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 4; PP. 1574-1579; BIBL. 33 REF.Article

EPITAXIAL AND POLYCRYSTALLINE GAAS SOLAR CELLS USING OM-CVD TECHNIQUESYEH YCM; WANG KL; SHIN BK et al.1980; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 1980. 14/1980/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1980; PP. 1338-1342; BIBL. 6 REF.Conference Paper

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