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DISLOCATION ETCH PITS IN LPE-GROWN PB1-XSNXTE (LTT) HETEROSTRUCTURESTAMARI N; SHTRIKMAN H.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 9; PP. 5736-5742; BIBL. 23 REF.Article

IMPROVED NUCLEATION AND A PLANAR INTERFACE IN LPE GROWN PB1-XSNXTE HETEROSTRUCTURESTAMARI N; SHTRIKMAN H.1979; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1979; VOL. 47; NO 3; PP. 463-466; BIBL. 19 REF.Article

NON-SEEDED GROWTH OF LARGE SINGLE PB1-XSNXTE CRYSTALS ON A QUARTZ SURFACE.TAMARI N; SHTRIKMAN H.1978; J. CRYST. GROWTH; NETHERL.; DA. 1978; VOL. 43; NO 3; PP. 378-380; BIBL. 6 REF.Article

GROWTH STUDY OF LARGE NON-SEEDED PB1-XSNXTE SINGLE CRYSTALSTAMARI N; SHTRIKMAN H.1979; J. ELECTRON. MATER.; USA; DA. 1979; VOL. 8; NO 3; PP. 269-288; BIBL. 18 REF.Article

HIGH-T0 LOW-THRESHOLD CRESCENT INGAASP MESA-SUBSTRATE BURIED-HETEROJUNCTION LASERSTAMARI N; SHTRIKMAN H.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 4; PP. 177-178; BIBL. 7 REF.Article

LPE GROWTH OF PB1-XSNXTE LAYERS ON METALETCHED SUBSTRATESTAMARI N; SHTRIKMAN H.1980; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1980; VOL. 48; NO 3; PP. 383-386; BIBL. 17 REF.Article

CALCULATION OF THE PHASE DIAGRAM OF THE PB-SN-TE SYSTEM IN THE (PN+SN)-RICH REGIONSZAPIRO S; TAMARI N; SHTRIKMAN H et al.1981; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1981; VOL. 10; NO 3; PP. 501-516; BIBL. 37 REF.Article

ELECTRICAL PROPERTIES OF INDIUM-DOPED LPE LAYERS OF PB1-XSNXTEZEMEL A; EGER D; SHTRIKMAN H et al.1981; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1981; VOL. 10; NO 2; PP. 301-312; BIBL. 20 REF.Article

CONTROL OF ELECTRON CONCENTRATION IN LIQUID-PHASE EPITAXIAL LAYERS OF PB1-XSNXTE BY INDIUM DOPINGEGER D; ZEMEL A; SHTRIKMAN H et al.1980; MATER. RES. BULL.; ISSN 0025-5408; USA; DA. 1980; VOL. 15; NO 9; PP. 1333-1338; BIBL. 15 REF.Article

Be-implanted GaAs/GaAlAs double heterostructure stripe geometry lasers grown by metalorganic chemical vapor depositionSHTRIKMAN, H; FEKETE, D.Journal of applied physics. 1984, Vol 56, Num 5, pp 1298-1300, issn 0021-8979Article

Scaling up an LPE system for growing GaAs/GaAlAs DH lasersSHTRIKMAN, H; FEKETE, D.Journal of crystal growth. 1983, Vol 64, Num 2, pp 333-337, issn 0022-0248Article

Optical absorption study of MOCVD grown CdTe-ZnTe superlatticesSHTRIKMAN, H; FINKMAN, E.Superlattices and microstructures. 1989, Vol 6, Num 1, pp 55-58, issn 0749-6036, 4 p.Article

LASING PROPERTIES OF INGAASP BURIED HETEROJUNCTION LASERS GROWN ON A MESA SUBSTRATEORON M; TAMARI N; SHTRIKMAN H et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 7; PP. 609-611; BIBL. 12 REF.Article

HIGH QUANTUM EFFICIENCY INGAASP/INP LASERSTAMARI N; ORON M; MILLER BI et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 11; PP. 1025-1027; BIBL. 13 REF.Article

Current distribution in the integer quantum Hall effect : The role of bulk statesYAHEL, E; PALEVSKI, A; SHTRIKMAN, H et al.Superlattices and microstructures. 1997, Vol 22, Num 4, pp 537-540, issn 0749-6036Article

X-ray study of the crystalline structure of CdTe layers grown on (001),(111)A, and (111)B CdTe surfaces by metalorganic chemical vapor depositionORON, M; RAIZMAN, A; SHTRIKMAN, H et al.Applied physics letters. 1988, Vol 52, Num 13, pp 1059-1061, issn 0003-6951Article

Scattering of a two-dimensional electron gas by a correlated system of ionized donorsBUKS, E; HEIBLUM, M; LEVINSON, Y et al.Semiconductor science and technology. 1994, Vol 9, Num 11, pp 2031-2041, issn 0268-1242Article

Fabrication and transport measurements of honeycomb surface superlatticesSOIBEL, A; MEIRAV, U; MAHALU, D et al.Semiconductor science and technology. 1996, Vol 11, Num 11, pp 1756-1760, issn 0268-1242Article

Quantum-beat spectroscopy of the Zeeman splitting of heavy- and light-hole excitons in GaAs/AlxGa1-xAs quantum wellsCARMEL, O; SHTRIKMAN, H; BAR-JOSEPH, I et al.Physical review. B, Condensed matter. 1993, Vol 48, Num 3, pp 1955-1958, issn 0163-1829Article

Determining the [001] crystal orientation of CdTe layers grown on (001) GaAsSHTRIKMAN, H; ORON, M; RAIZMAN, A et al.Journal of electronic materials. 1988, Vol 17, Num 2, pp 105-110, issn 0361-5235Article

A detailed study of current-voltage characteristics in Au/SiO2/n-GaAs in wide temperature rangeALTUNTAS, H; ALTINDAL, S; SHTRIKMAN, H et al.Microelectronics and reliability. 2009, Vol 49, Num 8, pp 904-911, issn 0026-2714, 8 p.Article

Coupled electron-hole transportSIVAN, U; SOLOMON, P. M; SHTRIKMAN, H et al.Physical review letters. 1992, Vol 68, Num 8, pp 1196-1199, issn 0031-9007Article

Refractory metal-based low-resistance ohmic contacts for submicron GaAs heterostructure devicesMESSICA, A; MEIRAV, U; SHTRIKMAN, H et al.Thin solid films. 1995, Vol 257, Num 1, pp 54-57, issn 0040-6090Article

Fabrication and characterization of mesoscopic wires in GaAsRAMON, A; HEIBLUM, M; SHTRIKMAN, H et al.Semiconductor science and technology. 1993, Vol 8, Num 12, pp 2176-2183, issn 0268-1242Article

Parallel and perpendicular hole transport in heterostructures with high AlAs mole-fraction barriersKIEHL, R. A; SHTRIKMAN, H; YATES, J et al.Applied physics letters. 1991, Vol 58, Num 9, pp 954-956, issn 0003-6951, 3 p.Article

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