Theoretical studies of the electric field distribution and open-circuit voltage of amorphous silicon-based alloy p-i-n solar cellsHACK, M; SHUR, M. S.Journal of applied physics. 1984, Vol 55, Num 12, pp 4413-4417, issn 0021-8979Article

Impedance of thin semiconductor films in low electric fieldLEE, K; SHUR, M. S.Journal of applied physics. 1983, Vol 54, Num 7, pp 4028-4034, issn 0021-8979Article

Plasmonic terahertz detectors for biodetectionPALA, N; SHUR, M. S.Electronics letters. 2008, Vol 44, Num 24, pp 1391-1393, issn 0013-5194, 3 p.Article

Disk and stripe capacitancesGELMONT, B; SHUR, M. S; MATTAUCH, R. J et al.Solid-state electronics. 1995, Vol 38, Num 3, pp 731-734, issn 0038-1101Article

Modeling frequency dependence of GaAs MESFET characteristicsCONGER, J; PECZALSKI, A; SHUR, M. S et al.IEEE journal of solid-state circuits. 1994, Vol 29, Num 1, pp 71-76, issn 0018-9200Article

Power law GaAs MESFET modelCONGER, J; SHUR, M. S; PECZALSKI, A et al.I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 10, pp 2415-2417, issn 0018-9383Article

Subthreshold current in GaAs MESFET'sCONGER, J; PECZALSKI, A; SHUR, M. S et al.IEEE electron device letters. 1988, Vol 9, Num 3, pp 128-129, issn 0741-3106Article

Field effect transistor as ultrafast detector of modulated terahertz radiationKACHOROVSKII, V. Yu; SHUR, M. S.Solid-state electronics. 2008, Vol 52, Num 2, pp 182-185, issn 0038-1101, 4 p.Article

Compact model of current collapse in heterostructure field-effect transistorsKOUDYMOV, A; SHUR, M. S; SIMIN, G et al.IEEE electron device letters. 2007, Vol 28, Num 5, pp 332-335, issn 0741-3106, 4 p.Article

Physical models for amorphous-silicon thin-film transistors and their implementation in a circuit simulation programHACK, M; SHUR, M. S; SHAW, J. G et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 12, pp 2764-2769, issn 0018-9383Article

Analysis of noise margin and speed of GaAs MESFET DCFL using UM-SPICEHYUN, C. H; SHUR, M. S; PECZALSKI, A et al.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 10, pp 1421-1426, issn 0018-9383Article

Sub-0.1μm MOSFET modelling and circuit simulationYTTERDAL, T; SHUR, M. S; FJELDLY, T. A et al.Electronics Letters. 1994, Vol 30, Num 18, pp 1545-1546, issn 0013-5194Article

Density of two-dimensional electron gas in modulation-doped structure with graded interfaceGRINBERG, A. A; SHUR, M. S.Applied physics letters. 1984, Vol 45, Num 5, pp 573-574, issn 0003-6951Article

Degradation of AlGaN-based ultraviolet light emitting diodesSAWYER, S; RUMYANTSEV, S. L; SHUR, M. S et al.Solid-state electronics. 2008, Vol 52, Num 6, pp 968-972, issn 0038-1101, 5 p.Article

Strain-engineered novel III-N electronic devices with high quality dielectric/semiconductor interfacesASIF KHAN, M; SHUR, M. S; SIMIN, G et al.Physica status solidi. A. Applied research. 2003, Vol 200, Num 1, pp 155-160, issn 0031-8965, 6 p.Conference Paper

Gallium nitride opens the way to visible-blind UV detectorsSHUR, M. S; ASIF KHAN, M.Laser focus world. 1999, Vol 35, Num 6, pp 81-83, issn 1043-8092Article

Photoluminescence efficiency in AlGaN quantum wellsTAMULAITIS, G; MICKEVICIUS, J; JURKEVICIUS, J et al.Physica. B, Condensed matter. 2014, Vol 453, pp 40-42, issn 0921-4526, 3 p.Conference Paper

Optical triggering of 12 kV, 100 A 4H-SiC thyristorsRUMYANTSEV, S. L; LEVINSHTEIN, M. E; SHUR, M. S et al.Semiconductor science and technology. 2012, Vol 27, Num 1, issn 0268-1242, 015012.1-015012.4Article

Resonant terahertz absorption by plasmons in grating-gate GaN HEMT structuresMURAVJOV, A. V; VEKSLER, D. B; HU, X et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7311, issn 0277-786X, isbn 978-0-8194-7577-0, 73110D.1-73110D.7Conference Paper

Drain-to-gate field engineering for improved frequency response of GaN-based HEMTsPALA, N; HU, X; DENG, J et al.Solid-state electronics. 2008, Vol 52, Num 8, pp 1217-1220, issn 0038-1101, 4 p.Article

Terahertz detection by GaN/AlGaN transistorsEL FATIMY, A; BOUBANGA TOMBET, S; HU, X et al.Electronics Letters. 2006, Vol 42, Num 23, pp 1342-1344, issn 0013-5194, 3 p.Article

Lifetime of nonequilibrium carriers in high-Al-content AlGaN epilayersMICKEVICIUS, J; ALEKSIEJÜNAS, R; SHUR, M. S et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 1, pp 126-130, issn 0031-8965, 5 p.Article

Nonresonant detection of terahertz radiation by silicon-on-insulator MOSFETsPALA, N; TEPPE, F; VEKSLER, D et al.Electronics Letters. 2005, Vol 41, Num 7, pp 447-449, issn 0013-5194, 3 p.Article

Carrier diffusion and recombination in highly excited InGaN/GaN heterostructuresJARASIUNAS, K; ALEKSIEJÜNAS, R; YANG, J. W et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 5, pp 820-823, issn 0031-8965, 4 p.Conference Paper

Detection of sub-terahertz and terahertz radiation by plasma waves in silicon field effect transistorsTEPPE, F; MEZIANI, Y; DYAKONOVA, N et al.IEEE Sensors conference. 2004, isbn 0-7803-8692-2, 3Vol, vol 3, 1337-1340Conference Paper