CONTRIBUTION A L'ETUDE D'UN OSCILLATEUR A QUARTZ DE TRES HAUTE FREQUENCE.SIFFERT P.1974; ; S.L.; DA. 1974; PP. 1-54; H.T. 23; BIBL. 1 P. 1/2; (THESE DOCT. PHYS.; BESANCON)Thesis

CURRENT POSSIBILITIES AND LIMITATIONS OF CADMIUM TELLURIDE DETECTORS.SIFFERT P.1978; NUCL. INSTRUM. METHODS; NETHERL.; DA. 1978; VOL. 150; NO 1; PP. 1-12; BIBL. 30 REF.; (INT. WORKSHOP MERCURIC IODIDE CADMIUM TELLURIDE NUCL. DETECTORS; JERUSALEM; 1977)Conference Paper

AUGMENTATION DE LA HAUTEUR DE BARRIERE DE DIODES DE SCHOTTKY AU SILICIUM: APPLICATION AUX CELLULES SOLAIRES.PONPON JP; SIFFERT P.1975; J. PHYS.; FR.; DA. 1975; VOL. 36; NO 5 SUPPL.; PP. 149-151; ABS. ANGL.; BIBL. 9 REF.Article

AUGMENTATION DE LA TENSION EN CIRCUIT OUVERT DES CELLULES SOLAIRES AU SILICIUM DU TYPE DIODE SCHOTTKY. = INCREASING OPEN-CIRCUIT VOLTAGE OF SCHOTTKY DIODE-TYPE SILICON SOLAR CELLPONPON JP; SIFFERT P.1975; DGRST-7571428; FR.; DA. 1975; PP. 1-15; H.T. 8; ABS. ANGL.; BIBL. 8 REF.; (RAPP. FINAL, ACTION CONCERTEE: RECH. CERTAINES SOURCES ENERG., COMPL. GROUPE ENERG. SOLAIRE)Report

AUGMENTATION DE LA HAUTEUR DE BARRIERE DE DIODES DE SCHOTTKY AU SILICIUM: APPLICATION AUX CELLULES SOLAIRESPONPON JP; SIFFERT P.1975; J. PHYS.; FR.; DA. 1975; VOL. 36; NO 5 SUPPL; PP. 149-151; ABS. ANGL.; BIBL. 9 REF.Article

FURTHER RESULTS ON THE AGING OF SILICON SCHOTTKY DIODES: INFLUENCE OF THE METALPONPON JP; SIFFERT P.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 7; PP. 5050-5051; BIBL. 2 REF.Article

BARRIER HEIGHTS ON CADMIUM TELLURIDE SCHOTTKY SOLAR CELLS.PONPON JP; SIFFERT P.1977; REV. PHYS. APPL.; FR.; DA. 1977; VOL. 12; NO 2; PP. 427-430; ABS. FR.; BIBL. 7 REF.; (COLLOQ. INT. TELLURURE CADMIUM. PROPR. PHYS. APPL. 2; STRASBOURG; 1976)Conference Paper

COMPOUND SEMICONDUCTORS SURFACE CHARACTERIZATION BY HIGH RESOLUTION RUTHERFORD BACKSCATTERINGHAGE ALI M; SIFFERT P.1979; NUCL. INSTRUM. METHODS; NLD; DA. 1979; VOL. 166; NO 3; PP. 411-418; BIBL. 13 REF.Article

CHARACTERIZATION OF UNDOPED HIGH RESISTIVITY CDTE GROWN BY A THM METHOD.STUCK R; MULLER JC; SIFFERT P et al.1977; REV. PHYS. APPL.; FR.; DA. 1977; VOL. 12; NO 2; PP. 185-188; ABS. FR.; BIBL. 13 REF.; (COLLOQ. INT. TELLURURE CADMIUM. PROPR. PHYS. APPL. 2; STRASBOURG; 1976)Conference Paper

INTERFACE STUDY OF MIS SILICON SOLAR CELLS.PONPON JP; STUCK R; SIFFERT P et al.1976; IN: PHOTOVOLTAIC SPEC. CONF. 12; BATON ROUGE, LA.; 1976; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1976; PP. 900-903; BIBL. 20 REF.Conference Paper

EVALUATION DES PERTES D'ENERGIE D'IONS LOURDS DANS LE SILICIUM GRACE AU PHENOMENE DE CANALISATION.GROB JJ; GROB A; SIFFERT P et al.1974; VIDE; FR.; DA. 1974; NO 173; PP. 374-379; BIBL. 12 REF.Article

INTERFACE PROPERTIES AND STABILITY OF SCHOTTKY BARRIERS AND MIS SOLAR CELLSPONPON JP; STUCK R; SIFFERT P et al.1978; SUN, MANKIND'S FUTURE SOURCE OF ENERGY. INTERNATIONAL SOLAR ENERGY SOCIETY CONGRESS/1978-01-00/NEW DELHI; USA; NEW YORK: PERGAMON PRESS; DA. 1978; PP. 654-660; BIBL. 2 REF.Conference Paper

CAPACITANCE OF CADMIUM TELLURIDE SCHOTTKY DIODESRABIN B; TABATABAI H; SIFFERT P et al.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 49; NO 2; PP. 577-584; ABS. FRE; BIBL. 25 REF.Article

TSC DEFECT LEVEL IN SILICON PRODUCED BY IRRADIATION WITH MUONS OF GEV-ENERGY.HEIJNE HM; MULLER JC; SIFFERT P et al.1976; RAD. EFFECTS; G.B.; DA. 1976; VOL. 29; NO 1; PP. 25-26; BIBL. 5 REF.Article

DETECTEURS DE RAYONNEMENTS NUCLEAIRES A SEMICONDUCTEURS. EVOLUTION RECENTE.SIFFERT P; PONPON JP; CORNET A et al.1975; ONDE ELECTR.; FR.; DA. 1975; VOL. 55; NO 5; PP. 281-297; ABS. ANGL.; BIBL. 102 REF.Article

Development of the scientific and technical basis for integrated amorphous silicon modules. Hydrogenated amorphous silicon deposited by UV photolysis of silane and disilane for photovoltaic applicationsFOGARASSY, E; SIFFERT, P.European Communities Contractors. Meeting. 1. 1987, pp 34-37Conference Paper

EFFECTS OF HEAT TREATMENTS ON THE ELECTRICAL PROPERTIES OF POLYCRYSTALLINE SILICON SOLAR CELLSCOURCELLE E; MESLI M; MULLER JC et al.1982; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 16/1982-09-27/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1982; PP. 417-420; BIBL. 6 REF.Conference Paper

MEASUREMENT OF BARRIER HEIGHT ON ETCHED P-TYPE CADMIUM TELLURIDEPONPON JP; SARAPHY M; BUTTUNG E et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 59; NO 1; PP. 259-262; ABS. FRE; BIBL. 14 REF.Article

IMPLANTATION DE BORE DANS LE SILICIUM PAR DECHARGE GAZEUSE.MULLER JC; PONPON JP; GROB A et al.1976; VIDE; FR.; DA. 1976; NO 183 SUPPL.; PP. 176-185; ABS. ANGL.; BIBL. 3 REF.; (MATER. TECHNOL. MICROELECTR. TENDANCES ACTUELLES. COLLOQ. C.R.; MONTPELLIER; 1976)Conference Paper

SOLUBILITY LIMIT OF IMPURITIES IN SILICON AFTER LASER INDUCED MELTINGSTUCK R; FOGARASSY E; GROB JJ et al.1980; APPL. PHYS.; ISSN 0340-3793; DEU; DA. 1980; VOL. 23; NO 1; PP. 15-19; BIBL. 22 REF.Article

LASER-BEAM ANNEALING OF HEAVILY DAMAGED IMPLANTED LAYERS ON SILICONMULLER JC; GROB A; GROB JJ et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 4; PP. 287-289; BIBL. 22 REF.Article

METHODS TO SUPPRESS POLARIZATION IN CHOLINE COMPENSATED CADMIUM TELLURIDE DETECTORS.SIFFERT P; HAGE ALI M; STUCK R et al.1977; REV. PHYS. APPL.; FR.; DA. 1977; VOL. 12; NO 2; PP. 335-338; ABS. FR.; BIBL. 16 REF.; (COLLOQ. INT. TELLURURE CADMIUM. PROPR. PHYS. APPL. 2; STRASBOURG; 1976)Conference Paper

ENERGY LOSS OF HEAVY IONS IN NUCLEAR COLLISIONS IN SILICON.GROB JJ; GROB A; PAPE A et al.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 11; NO 9; PP. 3273-3279; BIBL. 25 REF.Article

Laser induced diffusion for the preparation of high efficiency Si solar cellsFOGARASSY, E; SIFFERT, P.Photovoltaic solar energy conference. 5. 1984, pp 1123-1127Conference Paper

ORIGIN OF THE DEFECTS OBSERVED AFTER LASER ANNEALING OF IMPLANTED SILICONMESLI A; MULLER JC; SALLES D et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 2; PP. 159-160; BIBL. 8 REF.Article