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Results 1 to 25 of 1039

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DYNAMICS OF LIQUID SILANE.THAPER CL; DASANNACHARYA BA.1976; PRAMANA; INDIA; DA. 1976; VOL. 6; NO 6; PP. 383-387; BIBL. 3 REF.Article

NEUTRON DIFFRACTION STUDY OF SOLID SID4.LEGRAND E; PRESS W.1976; SOLID STATE COMMUNIC.; G.B.; DA. 1976; VOL. 18; NO 9-10; PP. 1353-1355; BIBL. 7 REF.Article

LASER PURIFICATION OF SILANE: IMPURITY REDUCTION TO THE SUB-PART-PER-MILLION LEVELHARTFORD A JR; HUBER EJ; LYMAN JL et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 8; PP. 4471-4474; BIBL. 12 REF.Article

KINETIC DETERMINATION OF THE BOND DISSOCIATION ENERGY D(SIH3-H) AND ITS IMPLICATIONS FOR BOND STRENGTHS IN SILANESDONCASTER AM; WALSH R.1979; J. CHEM. SOC., CHEM. COMMUNIC.; GBR; DA. 1979; NO 20; PP. 904-905; BIBL. 12 REF.Article

ADDUCT DU TETRAFLUORURE DE SILICIUM AVEC LE N-BENZYLBENZIMIDAZOLEEHNNAN AA; DZERZHKO EK; GARNOVSKIJ AD et al.1979; KOORDIN. KHIM.; SUN; DA. 1979; VOL. 5; NO 6; PP. 947; BIBL. 5 REF.Article

THE CENTRIFUGAL DISTORTION DIPOLE MOMENT OF SILANE.KAGANN RH; OZIER I; GERRY MCL et al.1976; J. CHEM. PHYS.; U.S.A.; DA. 1976; VOL. 64; NO 8; PP. 3487-3488; BIBL. 11 REF.Article

REDISTRIBUTION STUDIES AND PREPARATION OF CHLOROBROMODISILANESSCHMOELZER H; HENGGE E.1982; J. ORGANOMET. CHEM.; ISSN 0022-328X; CHE; DA. 1982; VOL. 225; NO 1; PP. 171-176; BIBL. 11 REF.Article

SILICON BY SODIUM REDUCTION OF SILICON TETRAFLUORIDESANJURJO A; NANIS L; SANCIER K et al.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 1; PP. 179-184; BIBL. 6 REF.Article

KINETICS AND MECHANISM OF THE GAS PHASE THERMAL DECOMPOSITION OF HEXACHLORODISILANE IN THE PRESENCE OF IODINEDONCASTER AM; WALSH R.1980; CS FARADAY TRANS. I; ISSN 0300-9599; GBR; DA. 1980; VOL. 76; NO 2; PP. 272-279; BIBL. 20 REF.Article

KINETICS AND MECHANISM OF THE SILANE DECOMPOSITIONNEWMAN CG; O'NEAL HE; RING MA et al.1979; INTERNATION. J. CHEM. KINET.; USA; DA. 1979; VOL. 11; NO 11; PP. 1167-1182; BIBL. 25 REF.Article

KINETICS OF SICL4 OXIDATIONPOWERS DR.1978; J. AMER. CERAM. SOC.; USA; DA. 1978; VOL. 61; NO 7-8; PP. 295-297; BIBL. 10 REF.Article

Etude par spectre de masse des produits stables de décomposition de monosilane sous décharge luminescenteSLOVETSKIJ, D. I; KOCHKA, YA; STUKHLIK, I et al.Himiâ vysokih energij. 1983, Vol 17, Num 5, pp 476-478, issn 0023-1193Article

A novel synthetic procedure for the preparation of silicon sesquioxide at room temperatureBETTADAPURA SRINIVASAIAH SURESH; DODDABALLAPUR KRISHNAMURTHY PADMA.Journal of the Chemical Society. Dalton transactions. 1984, Num 8, pp 1779-1780, issn 0300-9246Article

Spectroscopic detection of particles from shock-wave-induced decomposition of SiH4STEINWANDEL, J; HOESCHELE, J.Chemical physics letters. 1985, Vol 116, Num 1, pp 25-29, issn 0009-2614Article

FTIR study of the kinetics and mechanism for the Cl-atom-initiated reactions of SiHCl3NIKI, H; MAKER, P. D; SAVAGE, C. M et al.Journal of physical chemistry (1952). 1985, Vol 89, Num 17, pp 3725-3729, issn 0022-3654Article

Some comments on kinetics and mechanism in the pyrolysis of monosilanePURNELL, J. H; WALSH, R.Chemical physics letters. 1984, Vol 110, Num 3, pp 330-334, issn 0009-2614Article

SYNTHESIS AND PROPERTIES OF (NF4)2SIF6 AND INTERACTION OF SIF4 WITH ANHYDROUS HF AND CSHF2WILSON WW; CHRISTIE KO.1982; J. FLUORINE CHEM.; ISSN 0022-1139; CHE; DA. 1982; VOL. 19; NO 3-6; PP. 253-262; BIBL. 19 REF.Article

KINETICS OF THE GAS-PHASE REACTION BETWEEN IODINE AND MONOSILANE AND THE BOND DISSOCIATION ENERGY D(H3SI-H)DONCASTER AM; WALSH R.1981; INT. J. CHEM. KINET.; ISSN 0538-8066; USA; DA. 1981; VOL. 13; NO 5; PP. 505-514; BIBL. 32 REF.Article

BEITRAEGE ZUR CHEMIE DES SILICIUMS UND GERMANIUMS. XXXIII: ZUR DARSTELLUNG VON KALIUMSILYL = SUR LA CHIMIE DU SI ET DU GE. XXXIII. PREPARATION DU POTASSIUM SILYLFEHER F; BETZEN G; KRANCHER M et al.1981; Z. ANORG. ALLG. CHEM.; ISSN 0044-2313; DDR; DA. 1981; VOL. 475; NO 4; PP. 81-86; ABS. ENG; BIBL. 10 REF.Article

CRYSTAL AND MOLECULAR STRUCTURES OF SILYL ISOCYANATE (AT-135OC) AND OF GERMYL ISOCYANATE (AT-95OC)BARROW MJ; EBSWORTH EAV; HARDING MM et al.1980; DALTON TRANS.; ISSN 0300-9246; GBR; DA. 1980; NO 10; PP. 1838-1844; BIBL. 28 REF.Article

MECHANISM OF THE THERMAL DECOMPOSITION OF MONOSILANENEUDORFI P; JODHAN A; STRAUSZ OP et al.1980; J. PHYS. CHEM.; ISSN 0022-3654; USA; DA. 1980; VOL. 84; NO 3; PP. 338-339; BIBL. 14 REF.Article

PURIFICATION POUSSEE DU TETRACHLORURE DE SILICIUM PAR CRISTALLISATION A CONTRE-COURANT EN MASSE FONDUEDEVYATYKH GG; AGLIULOV N KH; NIKOLAEV AE et al.1980; Z. PRIKL. HIM.; ISSN 0044-4618; SUN; DA. 1980; VOL. 53; NO 8; PP. 1845-1848; BIBL. 6 REF.Article

HIGH TEMPERATURE REACTION OF SICL4 AND O2 IN QUARTZ TUBESSINCLAIR WR; MACCHESNEY JB; GALLAGHER PK et al.1979; THERMOCHIM. ACTA; NLD; DA. 1979; VOL. 30; NO 1-2; PP. 225-231; BIBL. 18 REF.Article

DEPOSITION OF FLUORINE-DOPED SILICA LAYERS FROM A SICL4/SIF4/O2 GAS MIXTURE BY THE PLASMA-CVD METHOD.KUPPERS D; KOENINGS J; WILSON H et al.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 8; PP. 1298-1302; BIBL. 9 REF.Article

MOLECULAR SYMMETRIES AND MOTIONS IN CRYSTALLINE SILANE.OXTON IA; KNOP O.1978; CHEM. PHYS.; NETHERL.; DA. 1978; VOL. 30; NO 1; PP. 53-59; BIBL. 21 REF.Article

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