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MICROSTRUCTURE ET CRISTALLOGRAPHIE D'ALLIAGES EUTECTIQUES DU SILICIUM OBTENUS PAR CRISTALLISATION DIRIGEEBUTKEVICH DM; GRABOVETSKAYA GP; DEREVYAGINA LS et al.1981; IZV. AKAD. NAUK SSSR, NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1981; VOL. 17; NO 12; PP. 2190-2193; BIBL. 3 REF.Article

RPTSI PHASES (R=LA, CE, PR, ND, SM AND GD) WITH AN ORDERED THSI2 DERIVATIVE STRUCTUREKLEPP K; PARTHE E.1982; ACTA CRYSTALLOGR., B; ISSN 0567-7408; DNK; DA. 1982; VOL. 38; NO 4; PP. 1105-1108; BIBL. 17 REF.Article

THE SCHOTTKY-BARRIER HEIGHT OF THE CONTACTS BETWEEN SOME RARE EARTH METALS (AND SILICIDES) AND P-TYPENORDE H; DE SOUSA PIRES J; D'HEURLE F et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 11; PP. 865-867; BIBL. 22 REF.Article

STRUCTURE DE BANDES DES COMPOSES CEM2SI2 (M=MN, FE, CO, NI)KOTERLIN MD; NEMOSHKALENKO VV; NAGORNYJ V YA et al.1981; DOKL.-AKAD. NAUK UKR. SSR, SER. A; ISSN 0201-8446; UKR; DA. 1981; NO 5; PP. 71-74; ABS. ENG; BIBL. 11 REF.Article

SCHOTTKY BARRIER HEIGHT MEASUREMENT BY ELECTRON-BEAM INDUCED VOLTAGEHUANG HCW; ALIOTTA CF; HO PS et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 1; PP. 54-56; BIBL. 10 REF.Article

STRUCTURE FINE DE LA LIMITE D'ABSORPTION K DU SILICIUM DANS LES SILICIURES DES METAUX DE TRANSITIONSOKOLENKO VI; ZHURAKOVSKIJ EA; SOKOLENKO AI et al.1981; METALLOFIZIKA (KIEV); ISSN 0368-9662; UKR; DA. 1981; VOL. 3; NO 5; PP. 48-52; BIBL. 8 REF.Article

CONTACT RESISTANCE BEHAVIOR OF THE PD2 SI-AL CU SI SYSTEMSUGERMAN A; TSAI HJ; KRISTOFF JS et al.1982; JOURNAL OF ELECTRONIC MATERIALS; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 5; PP. 943-955; BIBL. 4 REF.Article

EDGE-DEFINED PATTERNING OF HYPERFINE REFRACTORY METAL SILICIDE MOS STRUCTURESOKAZAKI S; CHOW TP; STECKL AJ et al.1981; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 11; PP. 1364-1368; BIBL. 17 REF.Article

RELATIONS ENTRE LES TYPES STRUCTURAUX DE TIMN(FE)SI2 ET ZRFESI2 ET DETERMINATION D'UNE NOUVELLE STRUCTURE APPARENTEE: LE TYPE ZRMNSI2VENTURINI G; STEINMETZ J; ROQUES B et al.1982; J. LESS-COMMON MET.; ISSN 0022-5088; CHE; DA. 1982; VOL. 87; NO 1; PP. 21-30; ABS. ENG; BIBL. 11 REF.Article

HYPERFINE INTERACTIONS OF 161DY AND 57FE IN METALLIC PHASES DY (ME'1-XME''X) SI2(ME=MN,FE,CO,NI,CU)GORLICH EA; HRYNKIEWICK AZ; KMIEC R et al.1982; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1982; VOL. 15; NO 29; PP. 6049-6056; BIBL. 15 REF.Article

PULSED ELECTRON BEAM FOR SILICON ANNEALING = FAISCEAU D'ELECTRONS PULSE POUR LE RECUIT DU SILICIUMLEGGIERI G; LUCHES A; NASSISI V et al.1982; VACUUM; ISSN 0042-207X; GBR; DA. 1982; VOL. 32; NO 1; PP. 9-10; BIBL. 5 REF.Article

THEORY AND MEASUREMENTS OF PHOTORESPONSE FOR THIN FILM PD2SI AND PTSI INFRARED SCHOTTKY-BARRIER DETECTORS WITH OPTICAL CAVITYELABD H; KOSONOCKY WF.1982; RCA REVIEW; ISSN 0033-6831; USA; DA. 1982; VOL. 43; NO 4; PP. 569-589; BIBL. 11 REF.Article

ETUDE DE L'INTERRELATION ENTRE L'ETAT DE VALENCE DU CERIUM ET LE POUVOIR THERMOELECTRIQUE DIFFERENTIEL DANS LES COMPOSES DU TYPE CEM2SI2(M=FE,CO,NI,CU)LEVIN EM; LUTSIV RV; FINKEL'SHTEJN LD et al.1981; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1981; VOL. 23; NO 8; PP. 2401-2405; BIBL. 8 REF.Article

A STUDY OF VANADIUM AS DIFFUSION BARRIER BETWEEN ALUMINIUM AND GADOLINIUM SILICIDE CONTACTSEIZENBERG M; THOMPSON RD; TU KN et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 10; PP. 6891-6897; BIBL. 10 REF.Article

THIN FILM METALLIZATION STUDIES AND DEVICE LIFETIME PREDICTION USING AL-SI AND AL-CU-SI CONDUCTOR TEST BARSDANSO KA; TULLOS L.1981; MICROELECTRON. RELIAB.; ISSN 0026-2714; GBR; DA. 1981; VOL. 21; NO 4; PP. 513-527; BIBL. 26 REF.Article

MASSENSPEKTROMETRISCHE BESTIMMUNG DER DISSOZIATIONSENERGIEN DER GASFOERMIGEN MOLEKUELE CUSI(G) UND AGSI(G) = DETERMINATION PAR SPECTROMETRIE DE MASSE DES ENERGIES DE DISSOCIATION A L'ETAT GAZEUX DE CUSI(G) ET AGSI(G)RIEKERT G; LAMPARTER P; STEEB S et al.1981; Z. METALLKD.; ISSN 0044-3093; DEU; DA. 1981; VOL. 72; NO 11; PP. 765-768; ABS. ENG; BIBL. 15 REF.Article

CONTRIBUTION A L'ETUDE DES PERFORMANCES DE REVETEMENTS PROTECTEURS DU NIOBIUM FORMES PAR DEPOT DE BOUILLIE.WEBER R.1975; AO-CNRS-9104; FR.; DA. 1975; PP. 1-139; BIBL. 4 P.; (THESE DOCT. SCI. PHYS.; INST. NATL. POLYTECH. LORRAINE)Thesis

REFRACTORY SILICIDES FOR INTEGRATED CIRCUITSMURARKA SP.1980; J. VAC. SCI. TECHNOL.; ISSN 0022-5355; USA; DA. 1980; VOL. 17; NO 4; PP. 775-792; BIBL. 77 REF.Article

Work function and barrier heights of transition metal silicides = Austrittsarbeit und Barrierenhoehen von Uebergangsmetall-SilizidenBUCHER, E; SCHULZ, S; LUX-STEINER, M.C et al.Applied physics. A, Solids and surfaces. 1986, Vol 40, Num 2, pp 71-77, issn 0721-7250Article

CRYSTAL STRUCTURE, SUPERCONDUCTING AND MAGNETIC PROPERTIES OF NEW TERNARY SILICIDES LARHSI, LAIRSI AND NDIRSICHEVALIER B; LEJAY P; COLE A et al.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 41; NO 11; PP. 801-804; BIBL. 4 REF.Article

I) EVALUATION OF THIN PD, PT AND NI SILICIDES SCHOTTKY BARRIERS FOR SILICON SOLAR CELLS; II) LARGE AREA UNIFORM GROWTH OF SI LAYER BY SOLID PHASE EPITAXY; FINAL REPORTCANALI C.1981; ; LUX; LUXEMBOURG: OFFICE FOR OFFICIAL PUBLICATIONS OF THE EUROPEAN COMMUNITIES; DA. 1981; EUR/7096/CCE/150-76-ESI; 12 P.-10 PL.; 30 CM; BIBL. 14 REF.; ENERGYReport

MOSI2 FORMATION BY RAPID ISOTHERMAL ANNEALINGFULKS RT; POWELL RA; STACY WT et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 7; PP. 179-181; BIBL. 11 REF.Article

SINGLE CRYSTALLINE SILICIDE FORMATIONSAITOH S; ISHIWARA H; ASANO T et al.1981; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; NO 9; PP. 1649-1656; BIBL. 15 REF.Article

SUSCEPTIBILITY AND MOESSBAUER STUDIES OF MAGNETIC RARE EARTH-IRON-SILICIDESBRAUN HF; SEGRE CU; ACKER F et al.1981; JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS; ISSN 0304-8853; NLD; DA. 1981; VOL. 25; NO 2; PP. 117-123; BIBL. 12 REF.Article

STRUCTURE DES REVETEMENTS PAR DIFFUSION DE BOROSILICIURES SUR LE TUNGSTENE ET LE MOLYBDENEZMIJ VI; POLTAVTSEV NS; KOVTUN NV et al.1978; ZASHCH. METALLOV; S.S.S.R.; DA. 1978; VOL. 14; NO 2; PP. 232-234; BIBL. 7 REF.Article

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