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THE DISSOLUTION OF SIC AND OTHER MATERIALS IN MOLTEN SIMINNEAR WP.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 4; PP. 634-636; BIBL. 11 REF.Article

THE DISSOLUTION OF SIC AND OTHER MATERIALS IN MOLTEN SIMINNEAR WP.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 4; PP. 634-636; BIBL. 11 REF.Article

QUANTITATIVE AUTORADIOGRAPHIE AN HALBLEITERMATERIAL MIT PHOSPHORDIFFUNDIERTEN STANDARDS = AUTORADIOGRAPHIE QUANTITATIVE SUR DES MATERIAUX SEMICONDUCTEURS AVEC DES ETALONS DANS LESQUELS IL Y A EU DIFFUSION DE PHOSPHORETREUTLER HC; FREYER K; DUBNACK J et al.1983; JOURNAL OF RADIOANALYTICAL CHEMISTRY; ISSN 0022-4081; CHE; DA. 1983; VOL. 78; NO 1; PP. 155-163; ABS. ENGArticle

ADSORPTION OF BISMUTH ON SI(110) SURFACESOYAMA T; OHI S; KAWAZU A et al.1981; SURF. SCI.; NLD; DA. 1981-08; VOL. 109; NO 1; PP. 82-94; BIBL. 12 REF.Article

VARIATION OF CONTACT RESISTANCE OF ELECTROLESS NI-P ON SILICON WITH THE CHANGE OF PHOSPHOROUS CONCENTRATION IN THE DEPOSIT = VARIATION DE LA RESISTANCE DE CONTACT DES DEPOTS CHIMIQUES NI-P SUR SI EN FONCTION DE LA TENEUR EN P DANS LE DEPOTSINGH BK; MITRA RN.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 12; PP. 2578-2580; BIBL. 6 REF.Article

A COMMENT ON "THE SPATIAL RESOLUTION OF X-RAY MICROANALYSIS IN THE SCANNING TRANSMISSION ELECTRON MICROSCOPE"DOIG P; LONSDALE D; FLEWITT PEJ et al.1982; SCR. METALL.; ISSN 0036-9748; USA; DA. 1982; VOL. 16; NO 10; PP. 1201-1203; BIBL. 12 REF.Article

ADSORPTION OF BISMUTH ON SI(110) SURFACESOYAMA T; OHI S; KAWAZU A et al.1981; SURF. SCI.; NLD; DA. 1981-08; VOL. 109; NO 1; PP. 82-94; BIBL. 12 REF.Article

FAILURE MECHANISMS IN ALUMINIUM METALLIZATION OF SEMICONDUCTOR PARTS = MECANISMES DE RUPTURE DANS LES COUCHES METALLISEES D'AL SUR SEMI CONDUCTEURSSINHA AK.1979; J. INSTIT. ENGRS (INDIA), ELECTRON. TELECOMMUNIC. ENGNG DIV.; IND; DA. 1979; VOL. 60; NO 1; PP. 24-27; BIBL. 7 REF.Article

PD-SILICIDE REACTIONS INDUCED BY A MILLISECOND LASER PULSE = PD-SILIZID-REAKTIONEN INDUZIERT DURCH EINEN MILLISEKUNDEN-LASERIMPULS = FORMATION DE SILICIURES DE PALLADIUM INDUITE PAR UNE IMPULSION LASER DE QUELQUES MILLISECONDESGEILER HD; THRUM F; GOETZ G et al.1982; PHYS. STATUS SOLIDI (A), APPL. RES.; DDR; DA. 1982-04; VOL. 70; NO 2; PP. K159-K162; BIBL. 5 REF.Article

ELECTRONIC STRUCTURE OF THE SI-AU SURFACEMOUTTET C; GASPARD JP; LAMBIN P et al.1981; SURF. SCI.; NLD; DA. 1981-11; VOL. 111; NO 3; PP. L755-L758; BIBL. 11 REF.Article

KINETICS OF SILICON NITRIDE DEPOSITION ON SILICON FROM N-GASMOROSANU CE; SEGAL E.1980; REV. ROUM. CHIM.; ISSN 0035-3930; ROM; DA. 1980; VOL. 25; NO 2; PP. 181-188; BIBL. 4 REF.Article

PHASE SEPARATION IN ALLOY-SI INTERACTION = SEPARATION DE PHASES DANS L'INTERACTION ALLIAGE-SIOTTAVIANI G; TU KN; MAYER JW et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 4; PP. 331-333; BIBL. 6 REF.Article

CARBON MEASUREMENT IN THIN SILICON WAFERS ( EQUIV. A 400 MU M) BY INFRARED ABSORPTION SPECTROMETRYLEROUEILLE J.1982; APPL. SPECTROSC.; ISSN 0003-7028; USA; DA. 1982; VOL. 36; NO 2; PP. 153-155; BIBL. 2 REF.Article

EFFECT OF TEMPERATURE TREATMENT ON AL/SI AND AL/POLY-SI CONTACTS = INFLUENCE DE LA TEMPERATURE DU TRAITEMENT THERMIQUE DES CONTACTS AL/SI ET AL/POLYSISTOEVA RD; POPOVA AL; GANCHEVA VF et al.1981; DOKL. BOLG. AKAD. NAUK; ISSN 0366-8681; BGR; DA. 1981; VOL. 34; NO 7; PP. 977-980; BIBL. 12 REF.Article

SPECTROPHOTOMETRIC DETERMINATION OF TRACES OF ARSENIC IN SEMICONDUCTOR SILICONBULDINI PL; ZINI Q; FERRI D et al.1983; MIKROCHIMICA ACTA; ISSN 0026-3672; USA; DA. 1983; VOL. 2; NO 1-2; PP. 131-138; ABS. GER; BIBL. 9 REF.Article

ON THE THEORY OF THE DIFFUSION OF GOLD INTO DISLOCATED SILICON WAFERSSEEGER A; FRANK W.1982; APPL. PHYS. A, SOLIDS SURF.; DEU; DA. 1982; VOL. 27; NO 3; PP. 171-176; BIBL. 28 REF.Article

SPECTROGRAPHIC DETERMINATION OF TRACE ELEMENTS IN SOLAR-GRADE SILICONSETHUMADHAVAN A; MURTY PS.1982; MIKROCHIM. ACTA; ISSN 0026-3672; USA; DA. 1982; VOL. I; NO 3-4; PP. 213-218; ABS. GER; BIBL. 4 REF.Article

DIFFERENTIAL PULSE POLAROGRAPHIC DETERMINATION OF TRACES OF IRON IN SOLAR-GRADE SILICONFERRI D; BULDINI PL.1981; ANAL. CHIM. ACTA; ISSN 0003-2670; NLD; DA. 1981; VOL. 126; PP. 247-251; BIBL. 14 REF.Article

PHOSPHORUS DETERMINATION BY VARIOUS SUBSTOICHIOMETRIC METHODSSHIGEMATSU T; KUDO K.1981; NIPPON KAGAKU KAISHI (1972); ISSN 0369-4577; JPN; DA. 1981; NO 1; PP. 103-109; ABS. ENG; BIBL. 17 REF.Article

DETERMINATION DES PROFILS DE CONCENTRATION DU BORE DANS LE SILICIUM PAR LA METHODE DE L'AUTORADIOGRAPHIE DE TRACE DE SECTIONS POLIES OBLIQUESZVEREV BP; LARCHENKO VP; ZHUMAEV N et al.1979; ZAVODSK. LAB.; SUN; DA. 1979; VOL. 45; NO 2; PP. 144-146; BIBL. 5 REF.Article

ANALYSE SPECTROCHIMIQUE COUCHE PAR COUCHE DES MATERIAUX POUR MICROELECTRONIQUESHELPAKOVA IR.1978; IZVEST. SIBIR. OTDEL. AKAD. NAUK S.S.S.R., KHIM. NAUK; SUN; DA. 1978; NO 5; PP. 3-12; BIBL. 19 REF.Article

ETUDE ULTRAMICROCHIMIQUE DES COUCHES D'OXYDE DE CHROME, OBTENUES PAR LA METHODE DE LA SUPERPOSITION MOLECULAIRE A LA SURFACE DU SILICIUM ET DU GERMANIUM MONOCRISTALLINSNECHIPORENKO AP; SUKHAREVA TM; MALYGIN AA et al.1978; ZH. PRIKL. KHIM.; SUN; DA. 1978; VOL. 51; NO 11; PP. 2447-2451; BIBL. 12 REF.Article

PROTECTION OF NICKEL-BASED ALLOYS AGAINST CARBURIZATION WITH TI-SI-ENRICHED LAYERS = PROTECTION DES ALLIAGES A BASE DE NI CONTRE LA CARBURATION AVEC DES COUCHES DE TI-SISINGHEISER L; WAHL G; THIELE W et al.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 95; NO 1; PP. 35-45; BIBL. 9 REF.Conference Paper

EFFECT OF HEAT TREATMENT ON CONTACT RESISTANCE OF ALUMINIUM-MOLYBDENUM COATINGS ON BORON DOPED SILICIUMGURSKIJ LI; ZELENIN VA; BOBCHENOK YU L et al.1981; VESCI AKAD. NAVUK BSSR, SER. FIZ.-TEH. NAVUK; ISSN 0002-3566; BYS; DA. 1981; NO 1; PP. 112-116; ABS. ENG; BIBL. 6 REF.Article

INVESTIGATION ON FORMATION OF OHMIC CONTACT OF ALUMINIUM SOLDER TO N+ TYPE SILICONONUKI J; SOENO K.1981; NIPPON KINZOKU GAKKAISHI (1952); ISSN 0021-4876; JPN; DA. 1981; VOL. 45; NO 8; PP. 841-846; ABS. ENG; BIBL. 8 REF.Article

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