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RAMAN SPECTRA FROM SI AND SN IMPLANTED GAASNAKAMURA T; KATODA T.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 8; PP. 5870-5872; BIBL. 8 REF.Article

POLYCRYSTAL SILICON RECOVERY BY MEANS OF A SHAPED LASER PULSE TRAINVITALI G; BERTOLOTTI M; FOTI G et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 12; PP. 1018-1019; BIBL. 8 REF.Article

RADIATIVE-LIFETIME MEASUREMENTS IN SI II-SI V.LIVINGSTON AE; KERNAHAN JA; IRWIN DJG et al.1976; J. PHYS. B; G.B.; DA. 1976; VOL. 9; NO 3; PP. 389-397; BIBL. 1 P.Article

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A process simulation model for silicon ion implantation in undoped, LEC-grown GaAsBINDAL, A; WANG, K. L; CHANG, S. J et al.Journal of the Electrochemical Society. 1989, Vol 136, Num 8, pp 2414-2420, issn 0013-4651, 7 p.Article

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CR GETTERING BY NE ION IMPLANTATION AND THE CORRELATION WITH THE ELECTRICAL ACTIVATION OF IMPLANTED SI IN SEMI-INSULATING GAASYAGITA H; ONUMA T.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 2; PP. 1218-1220; BIBL. 10 REF.Article