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SINGLE S-V, 65 K RAM WITH SCALED-DOWN MOS STRUCTUREMASUDA H; HORI R; KAMIGAKI Y et al.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 672-677; BIBL. 11 REF.Article

AKTIVITAETEN AUF DEM GEBIET DER PHOTOELEKTRISCHEN SOLARZELLEN IN DER BRD. = FRG'S ACTIVITIES IN THE FIELD OF SOLAR CELLS = ACTIVITES EN ALLEMAGNE FEDERALE DANS LE DOMAINE DES CELLULES SOLAIRESLOSCH HR.1977; IN: DTSCH. SONNENFORUM. 1; HAMBURG; 1977; MUENCHEN; DEUTSCHE GES. FUER SONNENENERGIE; DA. 1977; VOL. 2; PP. 215-227; ABS. ANGL.; BIBL. 10 REF.Conference Paper

CELLULES SOLAIRES AU SILICIUM POLYCRISTALLIN. = SOLAR CELLS MADE OF POLYCRYSTALLINE SILICONBRISSOT JJ; BELOUET C.1975; REV. INTERNATION. HELIOTECH.; FR.; DA. 1975; PP. 42-47; ABS. ANGL.; BIBL. 14 REF.Article

THE INFLUENCE OF GRAIN BOUNDARIES ON RECOMBINATION IN POLYSISLICON PN-JUNCTION SOLAR CELLFOSSUM JG; NEUGROSCHEL A; LINDHOLM FA et al.1980; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 1980. 14/1980/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1980; PP. 184-190; BIBL. 15 REF.Conference Paper

THE RELATIVE ORIENTATIONS OF GRAINS AND THE NATURE OF GRAIN BOUNDARIES IN POLYSILICON SOLAR CELLSARMSTRONG RW; TAYLOR ME; STORTI GM et al.1980; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 1980. 14/1980/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1980; PP. 196-201; BIBL. 13 REF.Conference Paper

EARLY ASSESSMENT OF THE PHOTOVOLTAIC POTENTIALITIES OF RAD POLYSILICON SHEETSBELOUET C; FABRE E; MAKRAM EBEID S et al.1979; PHOTOVOLTAIC SOLAR ENERGY CONFERENCE. 2/1979/BERLIN; NLD/USA/GBR; DORDRECHT: D. REIDEL/BOSTON: D. REIDEL/LONDON: D. REIDEL; DA. 1979; PP. 114-122; BIBL. 13 REF.;_EUR-6376Conference Paper

HYDROGENATION EFFECTS IN CAST POLYCRYSTALLINE SILICON P-N JUNCTION SOLAR CELLSDEL VALLE JL; FLORES C; DUENAS F et al.1980; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 1980. 14/1980/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1980; PP. 202-207; BIBL. 16 REF.Conference Paper

DEPOSITION OF POLYCRYSTALLINE SILICON SOLAR CELLS.BRISSOT JJ; BELOUET C.1976; IN: HELIOTECH. DEV. INT. CONF. PROC.; DHAHRAN, SAUDI ARABIA; 1975; CAMBRIDGE, MASS.; DEVELOPMENT ANALYSIS ASSOC.; DA. 1976; VOL. 1; PP. 550-562; BIBL. 1 P.Conference Paper

THE EFFECTIVE LIFETIME IN SEMICRYSTALLINE SILICONJAIN SC; JANSSENS R; CHEEK G et al.1983; SOLAR CELLS; ISSN 0379-6787; CHE; DA. 1983; VOL. 9; NO 4; PP. 345-352; BIBL. 8 REF.Article

PHOTOLUMINESCENCE ANALYSIS: A TOOL FOR POLYCRYSTALLINE SILICON QUALITY EVALUATIONSHIVE LW.1982; ELECTROCHEMICAL SOCIETY. SPRING MEETING. GENERAL SESSION/1982-05-09/MONTREAL PQ; USA; PENNINGTON: ELECTROCHEMICAL SOCIETY; DA. 1982; PP. 301-302; BIBL. 2 REF.Conference Paper

GRAIN SIZE DEPENDENCE OF THE PHOTOVOLTAIC PROPERTIES OF SOLAR GRADE POLYSILICONKUMARI S; ARORA NK; JAIN GC et al.1981; SOL. ENERGY MATER.; ISSN 0165-1633; NLD; DA. 1981; VOL. 5; NO 4; PP. 383-390; BIBL. 20 REF.Article

POLYCRYSTALLINE SOLAR CELLS1980; SUNWORLD; GBR; DA. 1980; VOL. 4; NO 1; PP. 13Article

BREVET. PROCEDE DE PRODUCTION DE SILICIUM POLYCRISTALLIN1980; ; FRA; DA. 1980-04-18; FR/A1/2.433.479; DEP.79-12469/1979-05-16; PR. US/935.009/1978-08-18Patent

BREVET. PROCEDE ET DISPOSITIF D'ELABORATION DE SILICIUM POLYCRISTALLIN1980; ; FRA; DA. 1980-03-14; FR/A1/2.430.917; DEP.7820660/1978-07-11Patent

ETUDE D'UNE INTERFACE CARBONE-SILICIUM DANS UN RUBAN DE SILICIUM POLYCRISTALLIN = STUDY OF A CARBON-SILICON INTERFACE IN A POLYCRYSTALLINE SILICON RIBBONGOMA J; OBERLIN M; OBERLIN A et al.1980; REV. PHYS. APPL.; ISSN 0035-1687; FRA; DA. 1980; VOL. 15; NO 2; PP. 229-232; ABS. ENG; BIBL. 4 REF.Article

BREVET PROCEDE DE FABRICATION EN CONTINU DE SILICIUM POLYCRISTALLIN EN BANDE SUR UN SUPPORT SOLIDE, DISPOSITIF DE MISE EN OEUVRE ET SILICIUM AINSI OBTENU1979; ; FRA; DA. 1979-03-02; FR/A2/2.395.769; DEP.77-19800/1977-06-28Patent

DESIGN PRINCIPLES FOR HIGH-EFFICIENCY SMALL-GRAIN POLYSILICON SOLAR CELLS, WITH SUPPORTING EXPERIMENTAL STUDIESLINDHOLM FA; NEUGROSCHEL A; SAH CT et al.1982; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 16/1982-09-27/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1982; PP. 644-747; BIBL. 25 REF.Conference Paper

LARGE GRAIN POLYCRISTALLINE SILICON FROM RICE HUSKBOSE DN; GOVINDACHARYULU PA; BANERJEE HD et al.1982; SOL. ENERGY MATER.; ISSN 0165-1633; NLD; DA. 1982; VOL. 7; NO 3; PP. 319-321; BIBL. 8 REF.Article

PHYSICAL AND CHEMICAL CHARACTERIZATION OF R.A.D. SILICON FILMSROCHER A; FONTAINE C; OBERLIN M et al.1980; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 1980. 14/1980/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1980; PP. 1192-1197; BIBL. 14 REF.Conference Paper

GRAIN BOUNDARY PASSIVATION AND SOLAR CELL IMPROVEMENT IN POLYCRYSTALLINE SILICONGINLEY DS; SEAGER CH.1979; ELECTROCHEMICAL SOCIETY. MEETING. 155/1979/BOSTON MA; USA; PRINCETON: ELECTROCHEMICAL SOCIETY; DA. 1979; VOL. 1; PP. 628-629Conference Paper

SEMI-CRYSTALLINE SILICON SOLAR CELLS.LINDMAYER J.1976; IN: PHOTOVOLTAIC SPEC. CONF. 12; BATON ROUGE, LA.; 1976; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1976; PP. 82-85; BIBL. 3 REF.Conference Paper

BREVET 2.311.409 (A1) (76 14263). - 12 MAI 1976. SUBSTRATS PEU COUTEUX POUR DES CELLULES SOLAIRES POLYCRISTALLINES ET LEUR PROCEDE DE FABRICATION.sdPatent

A COMPARATIVE STUDY OF VARIOUS SURFACE BARRIER SOLAR CELLS ON POLYSILICON FOR TERRESTRIAL APPLICATIONSKAR S.sdMIAMI INTERNATIONAL CONFERENCE ON ALTERNATIVE ENERGY SOURCES. 2/1979/MIAMI BEACH FL; USA; CORAL GABLES FL: CLEAN ENERGY RESEARCH INSTITUTE; DA. S.D.; PP. 94-95Conference Proceedings

GRAIN BOUNDARIES IN SILICON SOLAR CELLSKAZMERSKI LL; RUSSELL PE; IRELAND PJ et al.1982; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 16/1982-09-27/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1982; PP. 622-626; BIBL. 24 REF.Conference Paper

GRAIN BOUNDARY BARRIER HEIGHT IN A JUNCTIONDUGAS J; CREST JP; OUALID J et al.1982; ELECTROCHEMICAL SOCIETY. SPRING MEETING. GENERAL SESSION/1982-05-09/MONTREAL PQ; USA; PENNINGTON: ELECTROCHEMICAL SOCIETY; DA. 1982; PP. 104-105; BIBL. 4 REF.Conference Paper

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