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SUR UNE METHODE APPROCHEE DE MODELISATION THEORIQUE DES REGIMES DE DOPAGE IONIQUESUPRUN AD; FEDORCHENKO AM; KHROMYAK K YA et al.1982; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1982; VOL. 11; NO 2; PP. 134-137; BIBL. 8 REF.Article

SILAFUNCTIONAL COMPOUNDS. SYNTHESIS AND REACTIVITY: ANNUAL SURVEY FOR THE YEAR 1980COREY JY.1982; J. ORGANOMET. CHEM. LIBR.; ISSN 0378-5203; NLD; DA. 1982; VOL. 13; PP. 1-125; BIBL. 512 REF.Article

CIRCUMSTELLAR SILICON CHEMISTRY AND THE SIO MASERCLEGG RES; VAN IJZENDOORN LJ; ALLAMANDOLA LJ et al.1983; MONTHLY NOTICES OF THE ROYAL ASTRONOMICAL SOCIETY; ISSN 0035-8711; GBR; DA. 1983; VOL. 203; NO 1; PP. 125-146; BIBL. 2 P.Article

SILICON. THE SILICON-CARBON BOND: ANNUAL SURVEY FOR THE YEAR 1980LARSON GL.1982; J. ORGANOMET. CHEM. LIBR.; ISSN 0378-5203; NLD; DA. 1982; VOL. 13; PP. 387-486; BIBL. 290 REF.Article

ETUDE DE LA PHOTOSENSIBILITE DU SYSTEME SI-SIO2IVANOV EI; LOPATINA LB; SUKHANOV VL et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 7; PP. 1343-1348; BIBL. 14 REF.Article

POLYTYPISME DU CARBURE DE SILICIUM: LOCALISATION ET STRUCTURE DU POLYTYPE 102R BASE SUR LA SEQUENCE (34).GAUTHIER JP; MICHEL P.1977; ACTA CRYSTALLOGR., A; DANEM.; DA. 1977; VOL. 33; NO 4; PP. 676-677; H.T. 1; ABS. ANGL.; BIBL. 7 REF.Article

MOLECULAR STRUCTURE, MICROSTRUCTURE, MACROSTRUCTURE AND PROPERTIES OF SILICON NITRIDE.JENNINGS HM; EDWARDS JO; RICHMAN MH et al.1976; INORG. CHIM. ACTA; ITAL.; DA. 1976; VOL. 20; NO 2; PP. 167-181; BIBL. 28 REF.Article

INTERFACE EFFECTS IN THE FORMATION OF SILICON OXIDE ON METAL SILICIDE LAYERS OVER SILICON SUBSTRATESBAGLIN JEE; D'HEURLE FM; PETERSON CS et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 4; PP. 1849-1854; BIBL. 33 REF.Article

PLASMA ETCHING OF SILICON AND SILICON DIOXIDE WITH HYDROGEN FLUORIDE MIXTURESSMOLINSKY G; MAYER TM; TRUESDALE EA et al.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 8; PP. 1770-1772; BIBL. 6 REF.Article

A HEXAGONAL (WURTZITE) FORM OF SILICON.JENNINGS HM; RICHMAN MH.1976; SCIENCE; U.S.A.; DA. 1976; VOL. 193; NO 4259; PP. 1242-1243; BIBL. 11 REF.Article

CHEMICAL SHIFTS OF AUGER LINES IN SOLIDS ON THE EXAMPLE OF THE KL23L23 TRANSITION IN SILICON AND ITS COMPOUNDSFELLENBERG R; STREUBEL P; MEISEL A et al.1982; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1982; VOL. 112; NO 1; PP. 55-60; ABS. GER; BIBL. 16 REF.Article

EXTENDED CYCLABILITY IN ELECTRICALLY-ALTERABLE READ-ONLY-MEMORIESDIMARIA DJ; DONG DW; FALCONY C et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 7; PP. 191-195; BIBL. 15 REF.Article

FACTORS AFFECTING THE FORMATION OF THE ALPHA - AND BETA -PHASES OF SILICON NITRIDE.CAMPOS LORIZ D; RILEY FL.1978; J. MATER. SCI.; G.B.; DA. 1978; VOL. 13; NO 5; PP. 1125-1127; BIBL. 10 REF.Article

ETUDE DU POLYTYPISME DES CRISTAUX DE CARBURE DE SILICIUM PAR DIFFRACTION ELECTRONIQUE PAR REFLEXION.MICHEL P; GAUTHIER JP; RIWAN R et al.1976; J. APPL. CRYSTALLOGR.; DENM.; DA. 1976; VOL. 9; NO 4; PP. 318-324; ABS. ANGL.; BIBL. 13 REF.Article

PLASMA DEPOSITION OF INORGANIC FILMSADAMS AC.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 4; PP. 135-139; BIBL. 10 REF.Article

ANALYSIS OF PARALLEL SCHOTTKY CONTACTS BY DIFFERENTIAL INTERNAL PHOTOEMISSION SPECTROSCOPYOKUMURA T; TU KN.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 2; PP. 922-927; BIBL. 14 REF.Article

STRUCTURE DU NITRURE DE SILICIUM SYNTHETISE PAR IMPLANTATION IONIQUE D'AZOTE ET MECANISME DE RESONANCE DE LA TRANSITION DE LA FORME ALPHA A LA FORME BETA LORS DU RECUITPAVLOV PV.1979; KRISTALLOGRAFIJA; SUN; DA. 1979; VOL. 24; NO 3; PP. 481-486; BIBL. 12 REF.Article

CERAMICS: IS THE U.S. LOSING OUT AGAIN.HARVEY RE.1983; IRON AGE; ISSN 0164-5137; USA; DA. 1983-02; VOL. 226; NO 4; PP. 34-36Article

PARTICULARITES DU MOUVEMENT DES DISLOCATIONS DANS LES STRUCTURES PLANAIRES DU SILICIUMKUSAKIN SI; LITVINOV YU M; ODINTSOV SL et al.1981; FIZ. HIM., OBRAB. MATER.; ISSN 0015-3214; SUN; DA. 1981; NO 3; PP. 105-111; BIBL. 9 REF.Article

SILICON. BONDING AND STRUCTURE: ANNUAL SURVEY COVERING THE YEAR 1980YODER CH.1982; JOURNAL OF ORGANOMETALLIC CHEMISTRY LIBRARY; ISSN 0378-5203; NLD; DA. 1982; VOL. 13; PP. 337-385; BIBL. 298 REF.Article

A REVISED ANALYSIS OF DRY OXIDATION OF SILICONFARGEIX A; GHIBAUDO G; KAMARINOS G et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2878-2880; BIBL. 12 REF.Article

DETERMINATION OF SILICON IN METALLIC TITANIUM AND IN TITANIUM BASE ALLOYS BY ATOMIC ABSORPTIONGORLOVA MN; VELLER ND; SKORSKAYA OL et al.1982; IND. LAB.; ISSN 0019-8447; USA; DA. 1982-12; VOL. 48; NO 6; PP. 560-562; BIBL. 1 REF.Article

SELECTIVE ISOTROPIC DRY ETCHING OF SI3N4 OVER SIO2SANDERS FHM; DIELEMAN J; PETERS HJB et al.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 11; PP. 2559-2561; BIBL. 7 REF.Article

SUBMICROMETER POLYSILICON GATE CMOS/SOS TECHNOLOGYIPRI AC; SOKOLOSKI JC; FLATLEY DW et al.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 7; PP. 1275-1279; BIBL. 9 REF.Article

KERAMOGRAPHIE: GEFUEGEANALYSE KERAMISCHER WERKSTOFFE = CERAMOGRAPHY: MICROSTRUCTURAL ANALYSIS OF CERAMIC MATERIALSGUGEL E.1980; RADEX-RUNDSCH.; AUT; DA. 1980-05; VOL. 1/2; PP. 83-90Conference Paper

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