kw.\*:("SILICON")
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SILAFUNCTIONAL COMPOUNDS. SYNTHESIS AND REACTIVITY: ANNUAL SURVEY FOR THE YEAR 1980COREY JY.1982; J. ORGANOMET. CHEM. LIBR.; ISSN 0378-5203; NLD; DA. 1982; VOL. 13; PP. 1-125; BIBL. 512 REF.Article
CIRCUMSTELLAR SILICON CHEMISTRY AND THE SIO MASERCLEGG RES; VAN IJZENDOORN LJ; ALLAMANDOLA LJ et al.1983; MONTHLY NOTICES OF THE ROYAL ASTRONOMICAL SOCIETY; ISSN 0035-8711; GBR; DA. 1983; VOL. 203; NO 1; PP. 125-146; BIBL. 2 P.Article
SILICON. THE SILICON-CARBON BOND: ANNUAL SURVEY FOR THE YEAR 1980LARSON GL.1982; J. ORGANOMET. CHEM. LIBR.; ISSN 0378-5203; NLD; DA. 1982; VOL. 13; PP. 387-486; BIBL. 290 REF.Article
ETUDE DE LA PHOTOSENSIBILITE DU SYSTEME SI-SIO2IVANOV EI; LOPATINA LB; SUKHANOV VL et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 7; PP. 1343-1348; BIBL. 14 REF.Article
POLYTYPISME DU CARBURE DE SILICIUM: LOCALISATION ET STRUCTURE DU POLYTYPE 102R BASE SUR LA SEQUENCE (34).GAUTHIER JP; MICHEL P.1977; ACTA CRYSTALLOGR., A; DANEM.; DA. 1977; VOL. 33; NO 4; PP. 676-677; H.T. 1; ABS. ANGL.; BIBL. 7 REF.Article
MOLECULAR STRUCTURE, MICROSTRUCTURE, MACROSTRUCTURE AND PROPERTIES OF SILICON NITRIDE.JENNINGS HM; EDWARDS JO; RICHMAN MH et al.1976; INORG. CHIM. ACTA; ITAL.; DA. 1976; VOL. 20; NO 2; PP. 167-181; BIBL. 28 REF.Article
INTERFACE EFFECTS IN THE FORMATION OF SILICON OXIDE ON METAL SILICIDE LAYERS OVER SILICON SUBSTRATESBAGLIN JEE; D'HEURLE FM; PETERSON CS et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 4; PP. 1849-1854; BIBL. 33 REF.Article
PLASMA ETCHING OF SILICON AND SILICON DIOXIDE WITH HYDROGEN FLUORIDE MIXTURESSMOLINSKY G; MAYER TM; TRUESDALE EA et al.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 8; PP. 1770-1772; BIBL. 6 REF.Article
A HEXAGONAL (WURTZITE) FORM OF SILICON.JENNINGS HM; RICHMAN MH.1976; SCIENCE; U.S.A.; DA. 1976; VOL. 193; NO 4259; PP. 1242-1243; BIBL. 11 REF.Article
CHEMICAL SHIFTS OF AUGER LINES IN SOLIDS ON THE EXAMPLE OF THE KL23L23 TRANSITION IN SILICON AND ITS COMPOUNDSFELLENBERG R; STREUBEL P; MEISEL A et al.1982; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1982; VOL. 112; NO 1; PP. 55-60; ABS. GER; BIBL. 16 REF.Article
EXTENDED CYCLABILITY IN ELECTRICALLY-ALTERABLE READ-ONLY-MEMORIESDIMARIA DJ; DONG DW; FALCONY C et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 7; PP. 191-195; BIBL. 15 REF.Article
ANALYSIS OF PARALLEL SCHOTTKY CONTACTS BY DIFFERENTIAL INTERNAL PHOTOEMISSION SPECTROSCOPYOKUMURA T; TU KN.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 2; PP. 922-927; BIBL. 14 REF.Article
STRUCTURE DU NITRURE DE SILICIUM SYNTHETISE PAR IMPLANTATION IONIQUE D'AZOTE ET MECANISME DE RESONANCE DE LA TRANSITION DE LA FORME ALPHA A LA FORME BETA LORS DU RECUITPAVLOV PV.1979; KRISTALLOGRAFIJA; SUN; DA. 1979; VOL. 24; NO 3; PP. 481-486; BIBL. 12 REF.Article
CERAMICS: IS THE U.S. LOSING OUT AGAIN.HARVEY RE.1983; IRON AGE; ISSN 0164-5137; USA; DA. 1983-02; VOL. 226; NO 4; PP. 34-36Article
PARTICULARITES DU MOUVEMENT DES DISLOCATIONS DANS LES STRUCTURES PLANAIRES DU SILICIUMKUSAKIN SI; LITVINOV YU M; ODINTSOV SL et al.1981; FIZ. HIM., OBRAB. MATER.; ISSN 0015-3214; SUN; DA. 1981; NO 3; PP. 105-111; BIBL. 9 REF.Article
A REVISED ANALYSIS OF DRY OXIDATION OF SILICONFARGEIX A; GHIBAUDO G; KAMARINOS G et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2878-2880; BIBL. 12 REF.Article
DETERMINATION OF SILICON IN METALLIC TITANIUM AND IN TITANIUM BASE ALLOYS BY ATOMIC ABSORPTIONGORLOVA MN; VELLER ND; SKORSKAYA OL et al.1982; IND. LAB.; ISSN 0019-8447; USA; DA. 1982-12; VOL. 48; NO 6; PP. 560-562; BIBL. 1 REF.Article
SELECTIVE ISOTROPIC DRY ETCHING OF SI3N4 OVER SIO2SANDERS FHM; DIELEMAN J; PETERS HJB et al.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 11; PP. 2559-2561; BIBL. 7 REF.Article
SUBMICROMETER POLYSILICON GATE CMOS/SOS TECHNOLOGYIPRI AC; SOKOLOSKI JC; FLATLEY DW et al.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 7; PP. 1275-1279; BIBL. 9 REF.Article
KERAMOGRAPHIE: GEFUEGEANALYSE KERAMISCHER WERKSTOFFE = CERAMOGRAPHY: MICROSTRUCTURAL ANALYSIS OF CERAMIC MATERIALSGUGEL E.1980; RADEX-RUNDSCH.; AUT; DA. 1980-05; VOL. 1/2; PP. 83-90Conference Paper
A PROPOS DE LA THEORIE DU PROCESSUS DE CROISSANCE EPITAXIALE DES COUCHES DE SILICIUM ET D'ALLIAGE DE SILICIUM DANS LE CAS DE DECOMPOSITION HOMOGENE DU MONOSILANE DANS LE VOLUME DU MELANGE GAZEUX D'UN REACTEUR VERTICALAFANASOVICH VF; KUZNETSOV YU N; PROKOP'EV EP et al.1979; ZH. PRIKL. KHIM.; SUN; DA. 1979; VOL. 52; NO 3; PP. 512-516; BIBL. 9 REF.Article
HIGH-PURITY SILICON FOR SOLAR CELL APPLICATIONS.DOSAJ VD; HUNT LP; SCHEI A et al.1978; J. METALS; U.S.A.; DA. 1978; VOL. 30; NO 6; PP. 8-13; BIBL. 6 REF.Article
NON-AXIAL DISLOCATIONS IN REACTION-SINTERED SILICON NITRIDE.MARQUIS PM; BUTLER E.1977; J. MATER. SCI.; G.B.; DA. 1977; VOL. 12; NO 2; PP. 424-426; BIBL. 4 REF.Article
ULTRAFILTRATION-LIGHT SPECTROPHOTOMETRIC DETERMINATION OF SILICON IN BLOODIHNAT M.1982; ANALYTICAL BIOCHEMISTRY; ISSN 0003-2697; USA; DA. 1982; VOL. 124; NO 2; PP. 380-395; BIBL. 14 REF.Article
AMORPHOUS-SILICON/SILICON-OXYNITRIDE FIELD-EFFECT TRANSISTORSISHIBASHI K; MATSUMURA M.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 5; PP. 454-456; BIBL. 8 REF.Article