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HALBLEITERSPEICHER U215D UND U225D = LES MEMOIRES SEMICONDUCTRICES U215D ET U225DKOEHLER T; MUENZER BG.1983; RADIO FERNSEHEN ELEKTRONIK; ISSN 0033-7900; DDR; DA. 1983; VOL. 32; NO 1; PP. 18-20; BIBL. 2 REF.Article

ELECTRICAL MEASUREMENT OF FEATURE SIZES IN MOS SI2-GATE VLSI TECHNOLOGYTAKACS D; MUELLER W; SCHWABE U et al.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 433-438; BIBL. 8 REF.Article

EVALUATION DE LA DISPERSION DE CAPACITES INTEGREESKRUMMENACHER F.1980; COMMUNIC. GROUP. ET. TELECOMMUNIC. FOND. HASLER BERNE (A. G. E. N.); CHE; DA. 1980; NO 29; PP. 41-46; ABS. GER/ENGArticle

A UHF MOS TETRODE WITH POLYSILICON GATEKRAASSEN FM; WILTING HJ; DE GROOT WCJ et al.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 1; PP. 23-30; BIBL. 12 REF.Article

STRESS-SENSITIVE PROPERTIES OF SILICON-GATE MOS DEVICESMIKOSHIBA H.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 3; PP. 221-232; BIBL. 13 REF.Article

SILICON-GATE CMOS DEVICES WITH 300 A GATE OXIDESLINDENBERGER WS; TRETOLA AR; POWELL WD et al.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 11; PP. 1179-1180; BIBL. 5 REF.Article

AMELIORATION DE LA COMPACITE DES MEMOIRES MOS PAR UNE TECHNOLOGIE DE GRILLE SILICIUM A DEUX NIVEAUXTONNEL EUGENE.1977; ; FRA; DA. 1977; DGRST/76 7 0653; 34 P.; 30 CM; BIBL. 5 REF.; ACTION CONCERTEE: COMPOSANTS ET CIRCUITS MICROMINIATURISESReport

A 65 KBIT DYNAMIC RAM USING SHORT CHANNEL MOS FETSTAKADA M; TAKESHIMA T; SUZUKI S et al.1979; TRANS. INST. ELECTRON. COMMUN. ENG. JPN., E; JPN; DA. 1979; VOL. 62; NO 7; PP. 484-485; BIBL. 3 REF.Article

SILICON-GATE N-WELL CMOS PROCESS BY FULL ION-IMPLANTATION TECHNOLOGYOHZONE T; SHIMURA H; TSUJI K et al.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 9; PP. 1789-1795; BIBL. 15 REF.Article

CMOS ANALOG INTEGRATED CIRCUITS BASED ON WEAK INVERSION OPERATION.VITTOZ E; FELLRATH J.1977; I.E.E.E. J. SOLID. STATE CIRCUITS; U.S.A.; DA. 1977; VOL. 12; NO 4; PP. 224-231; BIBL. 14 REF.Article

ELECTRICAL MEASUREMENT OF FEATURE SIZES IN MOS SI2-GATE VLSI TECHNOLOGYTAKACS D; MUELLER W; SCHWABE V et al.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1368-1373; BIBL. 8 REF.Article

MINIMUM SIZE ROM STRUCTURE COMPATIBLE WITH SILICON-GATE E/D MOS LSI.KAWAGOE H; TSUJI N.1976; I.E.E.E. J. SOLID-STATES CIRCUITS; U.S.A.; DA. 1976; VOL. 11; NO 3; PP. 360-364Article

A 1-MU M MO-POLY 64-KBIT MOS RAMYANAGAWA F; KIUCHI K; HOSOYA T et al.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 667-671; BIBL. 14 REF.Article

REALISATION D'UNE STRUCTURE TEST PERMETTANT DE CONTROLER ET D'AMELIORER LES PERFORMANCES DE CIRCUITS COMPLEXES MOS GRILLE SILICIUM.GILLES J.1976; DGRST-7570667; FR.; DA. 1976; PP. 1-34; H.T. 4; (RAPP. FINAL, ACTION CONCERTEE: COMPOSANTS CIRCUITS MICROMINIATURISES)Report

A HIGH-SPEED 4-BIT MICROPROCESSOR IN N-CHANNEL SILICON GATE TECHNOLOGY.BROMME I; PAULMICHL E; PFRENGER C et al.1976; SIEMENS FORSCH.-U. ENTWICKL.-BER.; DTSCH.; DA. 1976; VOL. 5; NO 6; PP. 319-323; ABS. ALLEM.; BIBL. 8 REF.Article

MOS COMPATIBILITY OF HIGH-CONDUCTIVITY TASI2/N+ POLY-SI GATESSINHA AK; LINDENBERGER WS; FRASER DB et al.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 490-495; BIBL. 14 REF.Article

MOS INTEGRATED-CIRCUITS WITH ION-IMPLANTED POLYSILICON RESISTOR LOADOHZONE T; HIRAO T; HORIUCHI S et al.1980; TRANS. INST. ELECTRON. COMMUN. ENG. JPN., SECT. E; ISSN 0387-236X; JPN; DA. 1980; VOL. 63; NO 11; PP. 803-806; BIBL. 4 REF.Article

EIN 8-BIT-ANALOG-DIGITAL-WANDLER IN MOS-SILIZIUM-GATE-TECHNOLOGIE NACH DEM LADUNGSVERTEILUNGSVERFAHREN = CONVERTISSEUR ANALOGIQUE NUMERIQUE A 6 BITS EN TECHNOLOGIE MOS A GRILLE SILICIUM PAR LA METHODE DE LA CHARGE DISTRIBUEEKESSLER H; ROSSGOTTERER R.1979; SIEMENS FORSCH.-U. ENTWICKL.-BER.; DEU; DA. 1979; VOL. 8; NO 5; PP. 261-263; BIBL. 5 REF.Article

C-MOS LSI: COMPARING SECOND-GENERATION APPROACHESWOLLESEN DL.1979; ELECTRONICS; USA; DA. 1979; VOL. 52; NO 19; PP. 116-123Article

LOW NOISE BUCKET BRIGADE DEVICE IS 99,99% EFFICIENT.ARITA S.1977; J. ELECTRON. ENGNG; JAP.; DA. 1977; NO 122; PP. 35-37Article

THRESHOLD-ALTERABLE SI-GATE MOS DEVICES.CHEN PCY.1977; I.E.E.E. TRANS-ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 5; PP. 584-586; BIBL. 14 REF.Article

TECHNOLOGIE DES CIRCUITS INTEGRES.GIRARDIN J.1977; BULL. ANNU. SOC. SUISSE CHRONOM. LAB. SUISSE RECH. HORLOG.; SUISSE; DA. 1977; VOL. 7; NO 3; PP. 343-346Article

RADIATION TOLERANT SILICON GATE CMOS/SOS USING ION IMPLANTATION.IPRI AC; FLATLEY DW.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 9; PP. 1110-1112; BIBL. 5 REF.Article

TECHNOLOGY OF A NEW N-CHANNEL ONE-TRANSISTOR EAROM CELL CALLED SIMOS.SCHEIBE A; SCHULTE H.1977; I.E.E.E. TRANS-ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 5; PP. 600-606; BIBL. 7 REF.Article

MOS PROCESSES1978; I.E.E.E. TRANS. CONSUMER ELECTRON.; USA; DA. 1978; VOL. 24; NO 2; PP. 155-167Article

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