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LIFT-OFF PATTERNING OF SPUTTERED SIO2 FILMSSERIKAWA T; YACHI T.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 4; PP. 918-919; BIBL. 7 REF.Article

RIE OF SIO2 IN DOPED AND UNDOPED FLUOROCARBON PLASMASNORSTROEM H; BUCHTA R; RUNOVC F et al.1982; VACUUM; ISSN 0042-207X; GBR; DA. 1982; VOL. 32; NO 12; PP. 737-745; BIBL. 29 REF.Article

OBSERVATIONS OF CMFN RADICALS IN REACTIVE ION BEAMETCHINGHAYASHI T; MIYAMURA M; KOMIYA S et al.1982; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 12; PART. 2; PP. L755-L757; BIBL. 19 REF.Article

PLASMA ETCHING OF SILICON AND SILICON DIOXIDE WITH HYDROGEN FLUORIDE MIXTURESSMOLINSKY G; MAYER TM; TRUESDALE EA et al.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 8; PP. 1770-1772; BIBL. 6 REF.Article

THEORETICAL STUDY OF SIO2-COOPER DL; WILSON S.1981; MOL. PHYS.; ISSN 0026-8976; GBR; DA. 1981; VOL. 44; NO 4; PP. 799-802; BIBL. 11 REF.Article

A REVISED ANALYSIS OF DRY OXIDATION OF SILICONFARGEIX A; GHIBAUDO G; KAMARINOS G et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2878-2880; BIBL. 12 REF.Article

PARAMETER AND REACTOR DEPENDENCE OF SELECTIVE OXIDE RIE IN CF4+H2EPHRATH LM; PETRILLO EJ.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 10; PP. 2282-2287; BIBL. 6 REF.Article

SDW MOSFET'S IN LSI ANALOG CIRCUIT DESIGNHAMDY EZ; ELMASRY MI.1982; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 1; PP. 2-8; BIBL. 7 REF.Article

SELECTIVE ISOTROPIC DRY ETCHING OF SI3N4 OVER SIO2SANDERS FHM; DIELEMAN J; PETERS HJB et al.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 11; PP. 2559-2561; BIBL. 7 REF.Article

FABRICATION OF SIO2 GRATING PATTERNS WITH VERTICAL SIDEWALLS BY SOR X-RAY LITHOGRAPHY AND REACTIVE ION-BEAM ETCHINGMATSUI S; MORIWAKI K; MASUDA N et al.1981; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; NO 9; PP. 1735-1740; BIBL. 7 REF.Article

DEPOSITION AND PROPERTIES OF RF REACTIVELY SPUTTERED SIO2 LAYERSKORTLANDT J; OOSTING L.1982; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1982; VOL. 25; NO 10; PP. 153-159; BIBL. 14 REF.Article

FACTORS AFFECTING PROBABILITY DISTRIBUTION AND YIELD OF SILICON DIOXIDE DEFECTSZAKZOUK AKM.1982; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 3; PP. 96-102; BIBL. 12 REF.Article

SELECTIVE REACTIVE ION BEAM ETCHING OF SIO2 OVER POLYCRYSTALLINE SIHEATH BA.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 2; PP. 396-402; BIBL. 16 REF.Article

ON THE PINHOLE MODEL FOR MIS DIODESFONASH SJ; ASHOK S.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 11; PP. 1075-1076; BIBL. 19 REF.Article

REACTIVE SPUTTER ETCHING OF SILICON WITH VERY LOW MASK-MATERIAL ETCH RATESHORWITZ CM.1981; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 11; PP. 1320-1323; BIBL. 10 REF.Article

REACTIVE ION ETCHING OF SILICON DIOXIDELIGHT RW; SEE FC.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 5; PP. 1152-1154; BIBL. 3 REF.Article

SUR UNE METHODE APPROCHEE DE MODELISATION THEORIQUE DES REGIMES DE DOPAGE IONIQUESUPRUN AD; FEDORCHENKO AM; KHROMYAK K YA et al.1982; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1982; VOL. 11; NO 2; PP. 134-137; BIBL. 8 REF.Article

PENTA- AND HEXACOORDINATED SILICON SITES ON SILICA SURFACESLOW MJD.1981; J. PHYS. CHEM.; ISSN 0022-3654; USA; DA. 1981; VOL. 85; NO 23; PP. 3543-3545; BIBL. 17 REF.Article

RF annealing of defects induced in SiO2 by oxygen plasmaSZEKERES, A; ALEXANDROVA, S.Physica status solidi. A. Applied research. 1983, Vol 77, Num 2, pp 721-724, issn 0031-8965Article

DETERMINATION DE L'EPAISSEUR DES COUCHES DANS LES STRUCTURES EPITAXIALES LOCALESBILENKO DI; KAZANOVA NP; POLYANSKAYA VP et al.1983; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1983; VOL. 12; NO 1; PP. 70-75; BIBL. 9 REF.Article

DETECTION OF PINHOLES IN R.F.-DIODE-SPUTTERED SIO2 FILMSHATTORI T; UTSUGI Y; YAMAUCHI H et al.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 97; NO 3; PP. 231-235; BIBL. 5 REF.Article

ELECTRON TRAPPING IN SI-O2 - AN INJECTION MODE DEPENDENT PHENOMENONEITAN B; FROHMAN BENTCHKOWSKY D; SHAPPIR J et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 6; PP. 523-525; BIBL. 20 REF.Article

MODELING OF CW LASER ANNEALING OF MULTILAYER STRUCTURESCALDER ID; SUE R.1982; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 11; PART. 1; PP. 7545-7550; BIBL. 15 REF.Article

OPTIMISATION OF IMPLANTATION CONDITIONS FOR THE FORMATION OF BURIED SIO2 LAYERS IN SILICONMOSSADEQ H; BENNETT RJ; ANAND KV et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 5; PP. 215-216; BIBL. 6 REF.Article

OBSERVATIONS OF ELECTRON AND HOLE TRANSPORT THROUGH THIN SIO2 FILMSHSU ST.1981; RCA REV.; ISSN 0033-6831; USA; DA. 1981; VOL. 42; NO 3; PP. 434-440; BIBL. 6 REF.Article

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