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CERAMIQUES: UNE DURE BATAILLE S'ENGAGE = CERAMICO: A HARD BATTLE1983; MACHINES PRODUCTION; ISSN 0047-536X; FRA; DA. 1983; NO 344; PP. 41-44; 3 P.Article

DETERMINATION OF REFRACTIVE INDEXES OF DIELECTRIC FILMS BY THE USE OF IMMERSION LIQUIDSAYUPOV BM; SYSOEVA NP.1981; CRYST. RES. TECHNOL.; DDR; DA. 1981; VOL. 16; NO 4; PP. 503-512; BIBL. 24 REF.Article

CHARACTERIZATION OF SILICON NITRIDE SINGLE CRYSTALS AND POLYCRISTALLINE REACTION SINTERED SILICON NITRIDE BY MICROHARDNESS MEASUREMENTSCHAKRABORTY D; MUKERJI J.1980; J. MATER. SCI.; ISSN 0022-2461; GBR; DA. 1980; VOL. 15; NO 12; PP. 3051-3056; BIBL. 16 REF.Article

COMMENT ON THE LADDER PHASE IN SILICON NITRIDE.METCALFE BL.1978; METALLOGRAPHY; U.S.A.; DA. 1978; VOL. 11; NO 2; PP. 231-233; BIBL. 7 REF.Article

BREVET PROCEDE DE PREPARATION DE NITRURE DE SILICIUM1978; ; FRA; DA. 1978-12-29; FR/A1/2.388.763; DEP.78-12506/1978-04-27; PR. JP/48.373-77/1977-04-28Patent

BREVET 2.337.702 (A1) (76 39365). - 29 DECEMBRE 1976. PROCEDE DE FABRICATION DE CORPS EN NITRURE DE SILICIUM ET CORPS OBTENUS.sdPatent

THE FORMATION OF NITRIDES ON PURE SILICON SURFACESDALGLEISH BJ; JENNINGS HM; PRATT PL et al.1981; PROC. BR. CERAM. SOC.; ISSN 0524-5141; GBR; DA. 1981; NO 31; PP. 85-96; BIBL. 7 REF.Conference Paper

ELECTRICAL AND MECHANICAL PROPERTIES OF SILICON NITRIDE FILMS DEPOSITED BY THE SICL4-NH3 REACTIONMISAWA Y; YAGI H.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; NO 10; PP. 1885-1888; BIBL. 10 REF.Article

STOICHIOMETRY AND MASKING ABILITEJ OF LPCVD SILICON NITRIDE AGAINST ARSENIC DIFFUSIONDIXIT A; CHEN CS; VOLK CE et al.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 10; PP. 2239-2242; BIBL. 4 REF.Article

THE REACTIONS OF SILICON NITRIDE WITH VANADIUM OXIDESTRIGG MB; MCCARTNEY ER.1980; CERAMURG. INT.; ISSN 0390-5519; ITA; DA. 1980; VOL. 6; NO 4; PP. 147-148; BIBL. 8 REF.Article

SYNTHESIS OF SILICON NITRIDES IN A LOW-TEMPERATURE PLASMA JET.SZYMANSKI A; HUCZKO A; PODGORSKI A et al.1978; Z. PHYS. CHEM., LEIPZIG; DTSCH.; DA. 1978; VOL. 259; NO 2; PP. 289-294; BIBL. 17 REF.Article

STUDIES ON SILICON NITRIDES OBTAINED IN AN ARC DISCHARGE PLASMA.SZYMANSKI A; HUCZKO A; PODGORSKI A et al.1976; ROCZ. CHEM.; POLSKA; DA. 1976; VOL. 50; NO 7-8; PP. 1453-1455; ABS. POL.; BIBL. 7 REF.Article

A HEXAGONAL (WURTZITE) FORM OF SILICON.JENNINGS HM; RICHMAN MH.1976; SCIENCE; U.S.A.; DA. 1976; VOL. 193; NO 4259; PP. 1242-1243; BIBL. 11 REF.Article

FACTORS AFFECTING THE FORMATION OF THE ALPHA - AND BETA -PHASES OF SILICON NITRIDE.CAMPOS LORIZ D; RILEY FL.1978; J. MATER. SCI.; G.B.; DA. 1978; VOL. 13; NO 5; PP. 1125-1127; BIBL. 10 REF.Article

MOLECULAR STRUCTURE, MICROSTRUCTURE, MACROSTRUCTURE AND PROPERTIES OF SILICON NITRIDE.JENNINGS HM; EDWARDS JO; RICHMAN MH et al.1976; INORG. CHIM. ACTA; ITAL.; DA. 1976; VOL. 20; NO 2; PP. 167-181; BIBL. 28 REF.Article

BREVET 2.339.582 (A1) (77 02106). - 26 JANVIER 1977. PROCEDE POUR LA FABRICATION D'UN OBJET EN NITRURE DE SILICIUM.sdPatent

HIGH/LOW MODULUS SI3N4-BN COMPOSITE FOR IMPROVED ELECTRICAL AND THERMAL SHOCK BEHAVIORMAZDIYASNI KS; RUH R.1981; J. AM. CERAM. SOC.; ISSN 0002-7820; USA; DA. 1981; VOL. 64; NO 7; PP. 415-419; BIBL. 18 REF.Article

PHOTONITRIDE PASSIVATING COATING ENHANCES IC RELIABILITY AND SIMPLIFIES FABRICATIONHALL TC; PETERS JW.1981; INSUL., CIRCUITS; ISSN 0020-4544; USA; DA. 1981; VOL. 27; NO 1; PP. 17-18Article

KERAMOGRAPHIE: GEFUEGEANALYSE KERAMISCHER WERKSTOFFE = CERAMOGRAPHY: MICROSTRUCTURAL ANALYSIS OF CERAMIC MATERIALSGUGEL E.1980; RADEX-RUNDSCH.; AUT; DA. 1980-05; VOL. 1/2; PP. 83-90Conference Paper

CHEMICALLY VAPOR DEPOSITED SI3N4.GALASSO FS; VELTRI RD; CROFT WJ et al.1978; AMER. CERAM. SOC. BULL.; U.S.A.; DA. 1978; VOL. 57; NO 4; PP. 453-454; BIBL. 5 REF.Article

STABILITE CHIMIQUE DES CRISTAUX FILIFORMES DE NITRURE DE SILICIUMTIMOFEEVA NI; MORDOVIN OA; GRIBKOV VN et al.1978; ZH. PRIKL. KHIM.; S.S.S.R.; DA. 1978; VOL. 51; NO 2; PP. 424-425; BIBL. 4 REF.Article

MASS SPECTROMETRIC DETECTION OF INTERMEDIATES IN CHEMICAL VAPOR DEPOSITION OF SI3N4.SIN SHONG LIN.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 12; PP. 1945-1947; BIBL. 14 REF.Article

NON-AXIAL DISLOCATIONS IN REACTION-SINTERED SILICON NITRIDE.MARQUIS PM; BUTLER E.1977; J. MATER. SCI.; G.B.; DA. 1977; VOL. 12; NO 2; PP. 424-426; BIBL. 4 REF.Article

THE RATE CONTROLLING PROCESS IN THE OXIDATION OF HOT PRESSED SILICON NITRIDE.CUBICCIOTTI D; LAU KH; JONES RL et al.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 12; PP. 1955-1956; BIBL. 4 REF.Article

DISSOCIATION DES NITRURES DE BORE, DE SILICIUM ET D'ALUMINIUMPODOBEDA LG; POZDYSHKINA OV.1977; ZH. FIZ. KHIM.; S.S.S.R.; DA. 1977; VOL. 51; NO 11; PP. 2818-2822; BIBL. 3 REF.Article

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