OXYDATION DU NITRURE DE SILICIUM, DE L'OXYNITRURE DE SILICIUM ET DES POUDRES SIALON DANS L'ATMOSPHERE DU SYSTEME O₂-N₂SATA T; FUJII K.1982; J. CERAM. SOC. JPN.; ISSN 0009-0255; JPN; DA. 1982; VOL. 90; NO 1039; PP. 110-118; ABS. ENG; BIBL. 18 REF.Article

STENGTHENING OF POLYPHASE SI₃N₄ MATERIALS THROUGH OXIDATIONLANGE FF; DAVIS BI; METCALF MG et al.1983; JOURNAL OF MATERIALS SCIENCE; ISSN 0022-2461; GBR; DA. 1983; VOL. 18; NO 5; PP. 1497-1505; BIBL. 15 REF.Article

THE EFFECTS OF ADDITIONS OF ALPHA -SI₃N₄ GROG ON THE ALPHA -Z RATIO OF SLIP CAST REACTION BONDED SILICON NITRIDEWILLIAMS RM; PETERS C.1982; JOURNAL OF MATERIALS SCIENCE LETTERS; ISSN 510106; GBR; DA. 1982; VOL. 1; NO 6; PP. 257-259; BIBL. 9 REF.Article

VOLATILIZATION ASSOCIATED WITH THE SINTERING OF POLYPHASE SI₃N₄ MATERIALSLANGE FF.1982; J. AM. CERAM. SOC.; ISSN 0002-7820; USA; DA. 1982; VOL. 65; NO 8; PP. C120-C121; BIBL. 9 REF.Article

SLIP CASTING OF SILICON SHAPES AND THEIR NITRIDINGWILLIAMS RM; EZIS A.1983; BULL.-AM. CERAM. SOC.; ISSN 0002-7812; USA; DA. 1983; VOL. 62; NO 5; PP. 607-619; 5 P.; BIBL. 19 REF.Article

DENSIFICATION OF SILICON NITRIDE: EFFECT OF CHLORINE IMPURITIESCLARKE DR.1982; J. AM. CERAM. SOC.; ISSN 0002-7820; USA; DA. 1982; VOL. 65; NO 2; PP. C21-C23; BIBL. 13 REF.Article

EFFECTS OF SPECIMEN SIZE ON STRENGTH OF SINTERED SILICON NITRIDEKATAYAMA Y; HATTORI Y.1982; J. AM. CERAM. SOC.; ISSN 0002-7820; USA; DA. 1982; VOL. 65; NO 10; PP. C164-C165; BIBL. 7 REF.Article

SELECTIVE ISOTROPIC DRY ETCHING OF SI₃N₄ OVER SIO₂SANDERS FHM; DIELEMAN J; PETERS HJB et al.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 11; PP. 2559-2561; BIBL. 7 REF.Article

ELECTRONIC STRUCTURES OF SI₂N₂O AND GE₂N₂O CRYSTALSCHING WY; SHANG YUAN REN.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 10; PP. 5788-5795; BIBL. 25 REF.Article

DYNAMIC FRACTURE TOUGHNESSES OF REACTION-BONDED SILICON NITRIDEKOBAYASHI AS; EMERY AF; BEEN MING LIAW et al.1983; JOURNAL OF THE AMERICAN CERAMIC SOCIETY; ISSN 0002-7820; USA; DA. 1983; VOL. 66; NO 2; PP. 151-155; BIBL. 19 REF.Conference Paper

MINIMIZATION OF THE EXTRACTION TIME FOR INJECTION-MOULDED CERAMICSJOHNSSON A; CARLSTROM E; HERMANSSON L et al.1983; PROCEEDINGS OF THE BRITISH CERAMIC SOCIETY; ISSN 0524-5141; GBR; DA. 1983; NO 33; PP. 139-147; BIBL. 7 REF.Article

FABRICATION OF LOW-SHRINKAGE SILICON NITRIDE MATERIAL BY PRESSURELESS SINTERINGPOMPE R; HERMANSSON L; CARLSSON R et al.1982; PROC. BR. CERAM. SOC.; ISSN 0524-5141; GBR; DA. 1982; NO 32; PP. 65-74; BIBL. 4 REF.Article

ETUDE DU FRITTAGE ET DU PRESSAGE ISOSTATIQUE DU NITRURE DE SILICIUMHOMMA K; TATSUNO T; OKADA H et al.1982; ZAIRYO. JOURNAL OF THE SOCIETY OF MATERIALS SCIENCE, JAPAN; ISSN 0514-5163; JPN; DA. 1982; VOL. 31; NO 349; PP. 960-966; ABS. ENG; BIBL. 9 REF.Article

MECHANOCHEMICAL POLISHING OF SILICON NITRIDEVORA H; ORENT TW; STOKES RJ et al.1982; J. AM. CERAM. SOC.; ISSN 0002-7820; USA; DA. 1982; VOL. 65; NO 9; PP. C140-C141; BIBL. 4 REF.Article

THE COMBINED EFFECTS OF FE AND H₂ ON THE NITRIDATION OF SILICONSHAW NJ.1982; J. MATER. SCI. LETT.; ISSN 510106; GBR; DA. 1982; VOL. 1; NO 8; PP. 337-340; BIBL. 13 REF.Article

A NITRIDE-BARRIER AVALANCHE-INJECTION EAROMHIJIYA S; ITO T; NAKAMURA T et al.1982; IEEE JOURNAL OF SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 5; PP. 852-856; BIBL. 8 REF.Article

AMORPHOUS-SILICON/SILICON-OXYNITRIDE FIELD-EFFECT TRANSISTORSISHIBASHI K; MATSUMURA M.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 5; PP. 454-456; BIBL. 8 REF.Article

PREPARATION OF HIGH-DENSITY SI₃N₄ BY A GAS-PRESSURE SINTERING PROCESSGRESKOVICH C.1981; J. AM. CERAM. SOC.; ISSN 0002-7820; USA; DA. 1981; VOL. 64; NO 12; PP. 725-730; BIBL. 22 REF.Article

CERAMIQUES THERMOMECANIQUES, A BASE DE SILICIUMORANGE G; FANTOZZI G.1981; IND. CERAM.; ISSN 0019-9044; FRA; DA. 1981; NO 753; PP. 617-625; ABS. ENG; BIBL. 119 REF.Article

DENSIFICATION OF SILICON NITRIDE POWDER WITH VARIOUS ADDITIVESBHATTACHARYA SK; CHAKLADER ACD.1983; CERAMICS INTERNATIONAL; ISSN 0272-8842; ITA; DA. 1983; VOL. 9; NO 2; PP. 49-52; BIBL. 11 REF.Article

THERMODYNAMICS OF SILICON NITRIDATION: EFFECT OF HYDROGENSHAW NJ; ZELEZNIK FJ.1982; JOURNAL OF THE AMERICAN CERAMIC SOCIETY; ISSN 0002-7820; USA; DA. 1982; VOL. 65; NO 11; PP. C.180-C.181; BIBL. 15 REF.Article

FABRICATION DES CERAMIQUES SI₃N₄ A HAUTE DENSITE SANS ADDITIF PAR FRITTAGE A HAUTE PRESSIONTAKATORI K; SHIMADA M; KOIZUMI M et al.1981; NIPPON KAGAKU KAISHI (1972); ISSN 0369-4577; JPN; DA. 1981; NO 9; PP. 1506-1507; ABS. ENG; BIBL. 13 REF.Article

PHASE RELATIONSHIPS IN THE SYSTEM SI₃N₄-SIO₂-LA₂O₃MITOMO M; IZUMI F; HORIUCHI S et al.1982; J. MATER. SCI.; ISSN 0022-2461; GBR; DA. 1982; VOL. 17; NO 8; PP. 2359-2364; BIBL. 19 REF.Article

Joining of silicon nitride using coating technologyTATLI, Z; THOMPSON, D. P.Surface & coatings technology. 2006, Vol 200, Num 9, pp 3078-3083, issn 0257-8972, 6 p.Article

WEAK ASYMMETRY IN BETA -SI₃N₄ AS REVEALED BY CONVERGENT BEAM ELECTRON DIFFRACTIONBANDO Y.1983; ACTA CRYSTALLOGRAPHICA. SECTION B: STRUCTURAL CRYSTALLOGRAPHY AND CRYSTAL CHEMISTRY; ISSN 0567-7408; DNK; DA. 1983; VOL. 39; NO 2; PP. 185-189; BIBL. 10 REF.Article