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Results 1 to 25 of 92

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SILICON-ON-SAPPHIRE TECHNOLOGY PRODUCES HIGH-SPEED SINGLE-CHIP PROCESSOR.FORBES BE.1977; HEWLETT-PACKARD J.; U.S.A.; DA. 1977; VOL. 28; NO 8; PP. 2-8; BIBL. 1 REF.Article

A NEW ISOLATION TECHNIQUE FOR SOS/LSI'S-LOCAL BURIED OXIDE ISOLATION OF SOS (LOBOS).SAKAI Y; HORI R; DOTA K et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 551-555; BIBL. 2 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

POLISHING OF SAPPHIRE WITH COLLOIDAL SILICA.GUTSCHE HW; MOODY JW.1978; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1978; VOL. 125; NO 1; PP. 136-138; BIBL. 13 REF.Article

RECENT SOS TECHNOLOGY ADVANCES AND APPLICATIONS.RONEN RS; MICHELETTI FB.1975; SOLID STATE TECHNOL.; U.S.A.; DA. 1975; VOL. 18; NO 8; PP. 39-46; BIBL. 1 P. 1/2Article

FIVE NODE MODEL FOR SOS/CMOS.OH SY; WARD D.1977; IN: ANNU. ASILOMAR CONF. CIRCUITS, SYST., COMPUT. 10; PACIFIC GROVE, CALIF.; 1976; NORTH HOLLYWOOD, CALIF.; WESTERN PERIODICALS; DA. 1977; PP. 127-134; BIBL. 6 REF.Conference Paper

THRESHOLD VOLTAGE ENGINEERING WITH ESFI SOS MOST'S.SCHLOTTERER H.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; SUPPL. 1; PP. 221-224; BIBL. 3 REF.; (CONF. SOLID STATE DEVICES. 7. PROC.; TOKYO; 1975)Conference Paper

ALUMINIUM-SOS SCHOTTKY DIODES.HSU ST.1977; R.C.A. REV.; U.S.A.; DA. 1977; VOL. 38; NO 4; PP. 533-541; BIBL. 4 REF.Article

LA TECHNIQUE SOS PREND SA REVANCHE.1976; INTER ELECTRON.; FR.; DA. 1976; NO 203; PP. 29-32Article

PROBLEMS AND SOLUTIONS IN THE PREPARATION OF SOS WAFERS.MAURITS JEA.1977; SOLID STATE TECHNOL.; U.S.A.; DA. 1977; VOL. 20; NO 4; PP. 81-86; BIBL. 15 REF.Article

ION IMPLANTED DEVICES IN SILICON ON SAPPHIREPETERSTROEM S; HOLMEN G.1980; PHYS. SCR.; ISSN 0031-8949; SWE; DA. 1980; VOL. 22; NO 3; PP. 308-313; BIBL. 20 REF.Article

ON THE CHARACTERISTIC OF THE DEEP-DEPLETION SOS TRANSISTOR.WORLEY ER.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 12; PP. 1342-1345; BIBL. 13 REF.Article

APPLICATION DE LA TECHNOLOGIE SOS AUX CIRCUITS HORLOGERS.SCHWOB P; SAINTOT P.1976; BULL. ANNU. SOC. SUISSE CHRONOM. LAB. SUISSE RECH. HORLOG.; SUISSE; DA. 1976; VOL. 7; NO 2; PP. 229-234; BIBL. 6 REF.Article

FREQUENCY DEPENDENT PROPAGATION DELAY IN SILICON-ON-SAPPHIRE DIGITAL INTEGRATED CIRCUITSEATON SS; LALEVIC B.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 10; PP. 1253-1257; BIBL. 6 REF.Article

INFLUENCE OF CRYSTALLINE DEFECTS AND RESIDUAL STRESS ON THE ELECTRICAL CHARACTERISTICS OF SOS MOS DEVICES.ONGA S; HATANAKA K; KAWAJI S et al.1978; JAP. J. APPL. PHYS.; JAP.; DA. 1978; VOL. 17; NO 2; PP. 413-422; BIBL. 14 REF.Article

TRAP CHARACTERIZATION IN S.O.S.-M.O.S. TRANSISTORS USING NOISE MEASUREMENTS.TOUBOUL A; PELLOUX G; LECOY G et al.1978; REV. PHYS. APPL.; FR.; DA. 1978; VOL. 13; NO 5; PP. 227-231; ABS. FR.; BIBL. 11 REF.Article

DUAL DEPLETIN CMOS (D2CMOS) STATIC MEMORY CELL.TAKAGI H; KANO G.1977; I.E.E.E.J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1977; VOL. 12; NO 4; PP. 424-426; BIBL. 8 REF.Article

HIGH-FIELD ELECTRON TRANSPORT IN SILICON-ON-SAPPHIRE LAYERSCOOK RK; FREY J.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 5; PP. 2656-2658; BIBL. 8 REF.Article

NOISE IN DEVICES1978; REV. PHYS. APPL.; FRA; DA. 1978; VOL. 13; NO 12; PP. 715-723; ABS. FRE; BIBL. DISSEM.Conference Paper

ETUDE DE LA FIABILITE DE CIRCUITS LSI REALISES EN TECHNOLOGIE CMOS/SOS ET ENCAPSULES SOUS ENROBAGE PLASTIQUEBONNETON F; GOUYON B; MORTINI P et al.1978; ; FRA; DA. 1978; CNET 77 9B 486; (33 P.); 30 CM; BIBL. 7 REF.Report

THE EFFECTS OF OXIDATION AND HYDROGEN ANNEALING ON THE SILICON-SAPPHIRE-INTERFACE REGION OF SOS.GOODMAN AM; WEITZEL CE.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 3; PP. 215-218; BIBL. 8 REF.Article

OPTICAL STUDIES OF THE BACK-CHANNEL LEAKAGE IN N-CHANNEL MOSFET ON SILICON-ON-SAPPHIRE (SOS).HARARI E.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 1; PP. 25-27; BIBL. 7 REF.Article

X-RAY LITHOGRAPHY FOR ONE MICRON LSISTOVER HL; HAUSE FL; MCGREEVY D et al.1979; SOLID STATE TECHNOL.; USA; DA. 1979; VOL. 22; NO 8; PP. 95-100; BIBL. 5 REF.Article

SOS LSI TECHNOLOGY ACHIEVES DEVICE RELIABILITY.TANGO H; MAEGUCHI K; SUGINO E et al.1978; J. ELECTRON. ENGNG; JAP.; DA. 1978; NO 137; PP. 52-55; BIBL. 7 REF.Article

DESIGN AUTOMATION FOR COMPLEX CMOS/SOS LSI HYBRIDS.SMILEY JW; RAMONDETTA P.1977; ELECTRON. PACKAG. PRODUCT.; U.S.A; DA. 1977; VOL. 17; NO 1; PP. 66-68; BIBL. 3 REF.Article

ELECTRON TRAPPING NOISE IN SOS MOS FIELD-EFFECT TRANSISTORS OPERATED IN THE LINEAR REGION.HSU ST.1977; R.C.A. REV.; U.S.A.; DA. 1977; VOL. 38; NO 2; PP. 226-237; BIBL. 13 REF.Article

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