UNSTABLE RESONATOR WITH MULTIPLE OUTPUTSKONOPNICKI MJ; SMITHERS ME.1983; APPLIED OPTICS; ISSN 0003-6935; USA; DA. 1983; VOL. 22; NO 6; PP. 947-951; BIBL. 4 REF.Article

THE BREAKDOWN VOLTAGE OF SILICON DIOXIDE BREAKDOWN DETECTORS FOR FISSION FRAGMENTSKLEIN N.1981; NUCL. INSTRUM. METHODS PHYS. RES.; ISSN 502936; NLD; DA. 1981; VOL. 189; NO 2-3; PP. 569-576; BIBL. 11 REF.Article

ETUDE DE LA PHOTOSENSIBILITE DU SYSTEME SI-SIO₂IVANOV EI; LOPATINA LB; SUKHANOV VL et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 7; PP. 1343-1348; BIBL. 14 REF.Article

PROPRIETES DES COUCHES CHROME-MONO-OXYDE DE SILICIUM ABSORBANT LA LUMIERELEVITINA EH I.1981; OPT.-MEH. PROM.; ISSN 0030-4042; SUN; DA. 1981; NO 6; PP. 31-32; BIBL. 10 REF.Article

INTERFACE EFFECTS IN THE FORMATION OF SILICON OXIDE ON METAL SILICIDE LAYERS OVER SILICON SUBSTRATESBAGLIN JEE; D'HEURLE FM; PETERSON CS et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 4; PP. 1849-1854; BIBL. 33 REF.Article

EFFECTS OF GATE METALS ON INTERFACE EFFECTS IN METAL OXIDE SEMICONDUCTOR SYSTEMS AFTER ELECTRON TRAPPINGLAI SK.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 10; PP. 7104-7105; BIBL. 14 REF.Article

LABORATORY DETERMINATION OF ROTATIONAL TEMPERATURE OF ASTRAL SIO MOLECULERAM RS; JAGADISH SINGH.1981; INDIAN J. PURE APPL. PHYS.; ISSN 0019-5596; IND; DA. 1981; VOL. 19; NO 2; PP. 180-182; BIBL. 17 REF.Article

EXTENDED CYCLABILITY IN ELECTRICALLY-ALTERABLE READ-ONLY-MEMORIESDIMARIA DJ; DONG DW; FALCONY C et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 7; PP. 191-195; BIBL. 15 REF.Article

ETUDE DIRECTE DE LA DISTRIBUTION DU CHAMP ELECTRIQUE DANS LE CRISTAL BI₁₂GEO₂₀ PAR L'EFFET ELECTROOPTIQUE TRANSVERSALASTRATOV VN; IL'INSKIJ AV.1982; FIZIKA TVERDOGO TELA; ISSN 0367-3294; SUN; DA. 1982; VOL. 24; NO 1; PP. 108-115; BIBL. 18 REF.Article

BARRIER HEIGHTS AT THE POLYCRYSTALLINE SILICON-SIO₂ INTERFACEHICKMOTT TW; ISAAC RD.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 5; PP. 3464-3475; BIBL. 37 REF.Article

THE ORION SIO MASER: A UNIQUE OBJECT IN THE GALAXYELITZUR M.1982; ASTROPHYSICAL JOURNAL; ISSN 0004-637X; USA; DA. 1982; VOL. 262; NO 1; PART. 1; PP. 189-197; BIBL. 27 REF.Article

DILATATION THERMIQUE DE VERRES A HAUTE TENEUR EN SILICEMIRONOVA ML; CHERNYSHEVA GL; ORESHNIKOVA NG et al.1982; STEKLO KERAM.; ISSN 0131-9582; SUN; DA. 1982; NO 5; PP. 11-12; BIBL. 1 REF.Article

THE INFLUENCE OF MOBILE IONS ON THE SI/SIO₂ INTERFACE TRAPSHILLEN MW; HEMMES DG.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 8; PP. 773-780; BIBL. 23 REF.Article

POSSIBILITY OF INTRINSIC SI GAP STATES LOCALIZED AT THE SI-SIO₂ INTERFACEMARTINEZ E; YNDURAIN F.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 10; PP. 6511-6513; BIBL. 5 REF.Article

SELECTIVE PROPERTIES OF VOLUME PHASE HOLOGRAMS IN PHOTOREFRACTIVE CRYSTALSPENCHEVA TG; PETROV MP; STEPANOV SI et al.1982; OPT. COMMUN.; ISSN 0030-4018; NLD; DA. 1982; VOL. 40; NO 3; PP. 175-178; BIBL. 12 REF.Article

GENERATION OF FIELD-SENSITIVE INTERFACE STATESCROWLEY JL; STULTZ TJ; ICHIKI SK et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 12; PP. 1012-1014; BIBL. 11 REF.Article

SCANNING INTERNAL PHOTOEMISSION STUDIES OF SODIUM-CONTAMINATED METAL-OXIDE-SEMICONDUCTOR CAPACITORSBOUTHILLIER TM; YOUNG L; TSOI HY et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 2; PP. 957-962; BIBL. 19 REF.Article

INTERFACE TRAP GENERATION IN SILICON DIOXIDE WHEN ELECTRONS ARE CAPTURED BY TRAPPED HOLESLAI SK.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2540-2546; BIBL. 40 REF.Article

DC CHARACTERISTICS OF MOS STRUCTURES AND HOPPING CURRENTS IN THERMALLY GROWN SIO₂ FILMSKRAUSE H.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 72; NO 2; PP. 607-616; ABS. GER; BIBL. 27 REF.Article

PLANARIZATION OF PATTERNED SURFACES BY ION BEAM EROSIONJOHNSON LF; INGERSOLL KA; KAHNG D et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 7; PP. 636-638; BIBL. 6 REF.Article

STEAM-ENHANCED IMPURITY SEGREGATION IN DENSE ALUMINASMITH MA; DAY DE; LEVENSON LL et al.1982; BULL.-AM. CERAM. SOC.; ISSN 0002-7812; USA; DA. 1982; VOL. 61; NO 6; PP. 638-641; BIBL. 16 REF.Article

THE OXIDATION OF SHAPED SILICON SURFACESMARCUS RB; SHENG TT.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 6; PP. 1278-1282; BIBL. 13 REF.Article

TUNNELING SPECTROSCOPY OF ELECTRON SPACE CHARGE LAYERS ON (III)-SIKUNZE U; LAUTZ G.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 42; NO 1; PP. 27-30; BIBL. 11 REF.Article

PROCESSUS DE CONDUCTION ET D'EMISSION ELECTRONIQUE DE STRUCTURES EN COUCHES MINCES AL/SIO-B₂O₃/AU: MODELE ENVISAGEABLEROPARS F; DELAUNAY G; DESPUJOLS J et al.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 88; NO 2; PP. 141-151; ABS. ENG; BIBL. 13 REF.Article

IN-SIO₂ CERMET FILMS FOR OPTICAL RECORDINGSHIBUKAWA A.1981; APPL. OPT.; ISSN 0003-6935; USA; DA. 1981; VOL. 20; NO 22; PP. 3884-3888; BIBL. 6 REF.Article