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CRYSTAL CHEMISTRY OF COMPOUNDS MD3O(TOD4). II: STRUCTURAL RELATIONSHIPSEYSEL W; BREUER KH.1983; ZEITSCHRIFT FUER KRISTALLOGRAPHIE; ISSN 0044-2968; DEU; DA. 1983; VOL. 163; NO 1-2; PP. 1-17; BIBL. 22 REF.Article

UNSTABLE RESONATOR WITH MULTIPLE OUTPUTSKONOPNICKI MJ; SMITHERS ME.1983; APPLIED OPTICS; ISSN 0003-6935; USA; DA. 1983; VOL. 22; NO 6; PP. 947-951; BIBL. 4 REF.Article

THE BREAKDOWN VOLTAGE OF SILICON DIOXIDE BREAKDOWN DETECTORS FOR FISSION FRAGMENTSKLEIN N.1981; NUCL. INSTRUM. METHODS PHYS. RES.; ISSN 502936; NLD; DA. 1981; VOL. 189; NO 2-3; PP. 569-576; BIBL. 11 REF.Article

ETUDE DE LA PHOTOSENSIBILITE DU SYSTEME SI-SIO2IVANOV EI; LOPATINA LB; SUKHANOV VL et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 7; PP. 1343-1348; BIBL. 14 REF.Article

PROPRIETES DES COUCHES CHROME-MONO-OXYDE DE SILICIUM ABSORBANT LA LUMIERELEVITINA EH I.1981; OPT.-MEH. PROM.; ISSN 0030-4042; SUN; DA. 1981; NO 6; PP. 31-32; BIBL. 10 REF.Article

UEBER BIOLOGISCHE WIRKUNGEN VON SIO2, AL2O3 UND TIO2 = LES CONSEQUENCES BIOLOGIQUES DE SIO2, AL2O3 ET TIO2FERCH H; HABERSANG S.1982; SOEFW, SEIFEN OELE FETTE WACHSE; ISSN 0173-5500; DEU; DA. 1982; VOL. 108; NO 15; PP. 487-496; ABS. ENG; BIBL. 66 REF.Article

COLLISIONAL AND RADIATIVE EXCITATION OF SIO MASERSBUJARRABAL V; NGUYEN Q RIEU.1981; ASTRON. ASTROPHYS. (BERL.); ISSN 0004-6361; DEU; DA. 1981; VOL. 102; NO 1; PP. 65-72; BIBL. 42 REF.Article

INTERFACE EFFECTS IN THE FORMATION OF SILICON OXIDE ON METAL SILICIDE LAYERS OVER SILICON SUBSTRATESBAGLIN JEE; D'HEURLE FM; PETERSON CS et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 4; PP. 1849-1854; BIBL. 33 REF.Article

EFFECTS OF GATE METALS ON INTERFACE EFFECTS IN METAL OXIDE SEMICONDUCTOR SYSTEMS AFTER ELECTRON TRAPPINGLAI SK.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 10; PP. 7104-7105; BIBL. 14 REF.Article

LABORATORY DETERMINATION OF ROTATIONAL TEMPERATURE OF ASTRAL SIO MOLECULERAM RS; JAGADISH SINGH.1981; INDIAN J. PURE APPL. PHYS.; ISSN 0019-5596; IND; DA. 1981; VOL. 19; NO 2; PP. 180-182; BIBL. 17 REF.Article

EXTENDED CYCLABILITY IN ELECTRICALLY-ALTERABLE READ-ONLY-MEMORIESDIMARIA DJ; DONG DW; FALCONY C et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 7; PP. 191-195; BIBL. 15 REF.Article

CRYSTAL CHEMISTRY OF COMPOUNDS M3O(TO4) I: THE SYSTEM PB3GEO5-PB3SIO5-CD3SIO5-"CD3GEO5"BREUER KH; EYSEL W.1983; ZEITSCHRIFT FUER KRISTALLOGRAPHIE; ISSN 0044-2968; DEU; DA. 1983; VOL. 162; NO 1-4; PP. 289-297; BIBL. 13 REF.Article

ETUDE DIRECTE DE LA DISTRIBUTION DU CHAMP ELECTRIQUE DANS LE CRISTAL BI12GEO20 PAR L'EFFET ELECTROOPTIQUE TRANSVERSALASTRATOV VN; IL'INSKIJ AV.1982; FIZIKA TVERDOGO TELA; ISSN 0367-3294; SUN; DA. 1982; VOL. 24; NO 1; PP. 108-115; BIBL. 18 REF.Article

BARRIER HEIGHTS AT THE POLYCRYSTALLINE SILICON-SIO2 INTERFACEHICKMOTT TW; ISAAC RD.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 5; PP. 3464-3475; BIBL. 37 REF.Article

INITIAL STAGE OF SPUTTERING IN SILICON OXIDEHATTORI T; HISAJIMA Y; SAITO H et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 3; PP. 244-246; BIBL. 8 REF.Article

STABILIZATION OF THE BSO PHASE CONJUGATOR USING A FEEDBACK TECHNIQUESATO T; HATSUZAWA T; IKEDA O et al.1983; APPLIED OPTICS; ISSN 0003-6935; USA; DA. 1983; VOL. 22; NO 13; PP. 1996-1998; BIBL. 6 REF.Article

DETERMINATION OF THE SWITCHING CRITERION FOR METAL/TUNNEL OXIDE/N/P+ SILICON SWITCHING DEVICESSIMMONS JG; FARAONE L; MISHRA UK et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 5; PP. 109-112; BIBL. 10 REF.Article

HALL MEASUREMENTS ON MOSFET DEVICES PREPARED BY TCE OXIDATIONKOHL D; BECKER C; HEILAND G et al.1981; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1981; VOL. 14; NO 4; PP. 553-558; BIBL. 12 REF.Article

SOVIET PRIZ SPATIAL LIGHT MODULATORCASASENT D; CAIMI F; KHOMENKO A et al.1981; APPL. OPT.; ISSN 0003-6935; USA; DA. 1981; VOL. 20; NO 18; PP. 3090-3092; BIBL. 10 REF.Article

THE ORION SIO MASER: A UNIQUE OBJECT IN THE GALAXYELITZUR M.1982; ASTROPHYSICAL JOURNAL; ISSN 0004-637X; USA; DA. 1982; VOL. 262; NO 1; PART. 1; PP. 189-197; BIBL. 27 REF.Article

DILATATION THERMIQUE DE VERRES A HAUTE TENEUR EN SILICEMIRONOVA ML; CHERNYSHEVA GL; ORESHNIKOVA NG et al.1982; STEKLO KERAM.; ISSN 0131-9582; SUN; DA. 1982; NO 5; PP. 11-12; BIBL. 1 REF.Article

THE INFLUENCE OF MOBILE IONS ON THE SI/SIO2 INTERFACE TRAPSHILLEN MW; HEMMES DG.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 8; PP. 773-780; BIBL. 23 REF.Article

POSSIBILITY OF INTRINSIC SI GAP STATES LOCALIZED AT THE SI-SIO2 INTERFACEMARTINEZ E; YNDURAIN F.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 10; PP. 6511-6513; BIBL. 5 REF.Article

SELECTIVE PROPERTIES OF VOLUME PHASE HOLOGRAMS IN PHOTOREFRACTIVE CRYSTALSPENCHEVA TG; PETROV MP; STEPANOV SI et al.1982; OPT. COMMUN.; ISSN 0030-4018; NLD; DA. 1982; VOL. 40; NO 3; PP. 175-178; BIBL. 12 REF.Article

GENERATION OF FIELD-SENSITIVE INTERFACE STATESCROWLEY JL; STULTZ TJ; ICHIKI SK et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 12; PP. 1012-1014; BIBL. 11 REF.Article

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