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au.\*:("SIMIN, Grigory")

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Contact and Channel 3rd-Order Nonlinearity in III-N HFETsKHAN, Bilal M; SIMIN, Grigory S.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 7, pp 1957-1962, issn 0018-9383, 6 p.Article

Field-plate engineering for HFETsKARMALKAR, Shreepad; SHUR, Michael S; SIMIN, Grigory et al.I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 12, pp 2534-2540, issn 0018-9383, 7 p.Article

Low RC-Constant Perforated-Channel HFETSIMIN, Grigory S; ISLAM, Mirwazul; GAEVSKI, Mikhail et al.IEEE electron device letters. 2014, Vol 35, Num 4, pp 449-451, issn 0741-3106, 3 p.Article

Small- and Large-Signal Performance of III-Nitride RF Switches With Hybrid Fast/Slow Gate DesignAJAY KUMAR SATTU; JINWEI YANG; GASKA, Remis et al.IEEE microwave and wireless components letters. 2011, Vol 21, Num 6, pp 305-307, issn 1531-1309, 3 p.Article

Low frequency noise in gallium nitride field effect transistorsRUMYANTSEV, Sergey L; SHUR, Michael S; GASKA, Remis et al.International journal of high speed electronics and systems. 2002, Vol 12, Num 2, pp 449-458, 10 p.Conference Paper

HfO2―III-Nitride RF Switch With Capacitively Coupled ContactsKOUDYMOV, Alexei; PALA, Nezih; SIMIN, Grigory et al.IEEE electron device letters. 2009, Vol 30, Num 5, pp 478-480, issn 0741-3106, 3 p.Article

Multigate GaN RF Switches With Capacitively Coupled ContactsSIMIN, Grigory; KHAN, Bilal; JINGBO WANG et al.IEEE electron device letters. 2009, Vol 30, Num 9, pp 895-897, issn 0741-3106, 3 p.Article

Deep ultraviolet light emitting diodes using AlGaN quantum well active regionASIF KHAN, M; SHATALOV, Maxim; ADIVARAHAN, Vinod et al.Proceedings - Electrochemical Society. 2003, pp 152-157, issn 0161-6374, isbn 1-56677-349-0, 6 p.Conference Paper

Analytical HFET I-V Model in Presence of Current CollapseKOUDYMOV, Alexei; SHUR, Michael S; SIMIN, Grigory et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 3, pp 712-720, issn 0018-9383, 9 p.Article

Non-catalyst growth and characterization of a-plane AlGaN nanorodsGAEVSKI, Mikhail E; WENHONG SUN; JINWEI YANG et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 7, pp 1696-1699, issn 1862-6300, 4 p.Conference Paper

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