DEFECT SOLIDS: CARRIER DENSITIES, CONDUCTIVITY, AND FERMI LEVELS.SIMMONS JG.1977; PHYS. REV., B; U.S.A.; DA. 1977; VOL. 15; NO 2; PP. 964-972; BIBL. 11 REF.Article

THEORY OF DYNAMIC CHARGE AND CAPACITANCE CHARACTERISTICS IN MIS SYSTEMS CONTAINING DISCRETE SURFACE TRAPSSIMMONS JG; WEI LS.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 1; PP. 43-52; BIBL. 25 REF.Serial Issue

NON-STEADY-STATE BULK-GENERATION PROCESS IN PULSED METAL-INSULATOR-SEMICONDUCTOR CAPACITORS.SIMMONS JG; WEI LS.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 2; PP. 153-158; BIBL. 29 REF.Article

ON THE THEORY AND ANALYSES OF THE AC CHARACTERISTICS OF DEFECT THIN FILMS.NADKARNI GS; SIMMONS JG.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 9; PP. 4223; BIBL. 3 REF.Article

THEORY AND ANALYSES OF THE AC CHARACTERISTICS OF DEFECT THIN-FILM INSULATORS.NADKARNI GS; SIMMONS JG.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 1; PP. 114-119; BIBL. 17 REF.Article

PHOTOCONDUCTIVITY CHARACTERISTICS OF DEFECT INSULATORS.TAYLOR GW; SIMMONS JG.1975; J. PHYS. C; G.B.; DA. 1975; VOL. 8; NO 20; PP. 3360-3370; BIBL. 4 REF.Article

SURFACE-GENERATION STATISTICS AND ASSOCIATED THERMAL CURRENTS IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES.MAR HA; SIMMONS JG.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 11; NO 2; PP. 775-783; BIBL. 5 REF.Article

PHOTOCONDUCTIVITY AND THE DETERMINATION OF TRAPPING PARAMETERS IN AMORPHOUS SEMICONDUCTORS.TAYLOR GW; SIMMONS JG.1974; J. PHYS. C; G.B.; DA. 1974; VOL. 7; NO 17; PP. 3067-3074; BIBL. 7 REF.Article

THEORY OF PHOTOCONDUCTIVITY IN AMORPHOUS SEMICONDUCTORS CONTAINING RELATIVELY NARROW TRAP BANDS.SIMMONS JG; TAYLOR GW.1974; J. PHYS. C; G.B.; DA. 1974; VOL. 7; NO 17; PP. 3051-3066; BIBL. 11 REF.Article

THEORY OF THE METAL-INSULATOR-SEMICONDUCTOR THYRISTORHABIB SED; SIMMONS JG.1980; IEE PROC., PART I; ISSN 0143-7100; GBR; DA. 1980; VOL. 127; NO 4; PP. 176-182; BIBL. 14 REF.Article

TRANSIENT ISOTHERMAL GENERATION AT THE SILICON-SILICON OXIDE INTERFACE AND THE DIRECT DETERMINATION OF INTERFACE TRAP DISTRIBUTION.SIMMONS JG; MAR HA.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 5; PP. 369-374; BIBL. 13 REF.Article

EFFECT OF CHARGED-CENTRE SCATTERING ON THE MOBILITY OF PHOTO-EXCITED CARRIERS IN DEFECT PHOTOCONDUCTORSSIMMONS JG; TAYLOR GW.1973; PHILOS. MAG.; G.B.; DA. 1973; VOL. 27; NO 1; PP. 121-126; BIBL. 10 REF.Serial Issue

GENERALIZED THEORY OF CONDUCTION IN SCHOTTKY BARRIERSSIMMONS JG; TAYLOR GW.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 7; PP. 705-709; BIBL. 3 REF.Article

DETERMINATION OF ENERGY DENSITY DISTRIBUTION AND CAPTURE CROSS-SECTION IN INTERFACE STATES IN THE METAL-NITRIDE-OXIDE-SEMICONDUCTOR (MNOS) STRUCTURESINGH A; SIMMONS JG.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 3; PP. 219-226; BIBL. 12 REF.Article

NON-EQUILIBRIUM PSI _S VS VG CHARACTERISTICS OF MOS CAPACITORS AND RELATED EFFECTSTONNER PD; SIMMONS JG.1982; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 8; PP. 733-739; BIBL. 18 REF.Article

THEORY OF SWITCHING IN P-N-INSULATOR (TUNNEL)-METAL DEVICES: THICK-TUNNEL OXIDES AND INDIRECT TUNNEL EFFECTSHABIB SED; SIMMONS JG.1980; IEE PROC., PART 1; GBR; DA. 1980; VOL. 127; NO 3; PP. 111-118; BIBL. 22 REF.Article

THEORY OF SWITCHING IN P-N-INSULATOR (TUNNEL)-METAL DEVICES PART 1: PUNCHTHROUGH MODEHABIB SED; SIMMONS JG.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 2; PP. 181-192; BIBL. 28 REF.Article

NON-EQUILIBRIUM RESPONSE OF MOS DEVICES TO A LINEAR VOLTAGE RAMP. I. BULK DISCRETE TRAPS.BOARD K; SIMMONS JG.1977; SOLID STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 10; PP. 859-867; BIBL. 5 REF.Article

THEORY OF DYNAMIC CHARGE CURRENT AND CAPACITANCE CHARACTERISTICS IN MIS SYSTEMS CONTAINING DISTRIBUTED SURFACE TRAPSSIMMONS JG; WEI LS.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 1; PP. 53-66; BIBL. 25 REF.Serial Issue

EXPERIMENTAL STUDIES OF SWITCHING IN METAL SEMI-INSULATING N-P⁺ SILICON DEVICES.EL BADRY A; SIMMONS JG.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 12; PP. 963-966; BIBL. 4 REF.Article

THEORY OF SWITCHING PHENOMENA IN METAL/SEMI-INSULATOR/N-P⁺ SILICON DEVICES.SIMMONS JG; EL BADRY A.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 12; PP. 955-961; BIBL. 7 REF.Article

TEMPERATURE DEPENDENCE OF THIN FILM METAL/MOO₃/METAL CAPACITORSNADKARNI GS; SHIRODKAR VS; SIMMONS JG et al.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 94; NO 2; PP. 101-109; BIBL. 8 REF.Article

THE DETERMINATION OF INTERFACIAL AND BULK PROPERTIES OF GOLD IN M.O.S. STRUCTURES USING QUASIEQUILIBRIUM AND NON-STEADY-STATE LINEAR VOLTAGE-RAMP TECHNIQUESFARAONE L; NASSIBIAN AG; SIMMONS JG et al.1979; I.E.E. J. SOLID-STATE ELECTRON DEVICES; GBR; DA. 1979; VOL. 3; NO 5; PP. 121-126; BIBL. 20 REF.Article

EXPERIMENTAL RESPONSE OF MOS DEVICES TO A FAST LINEAR VOLTAGE RAMPBOARD K; SIMMONS JG; ALLMAN PGC et al.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 9; PP. 1157-1162; BIBL. 2 REF.Article

FREQUENCY RESPONSE OF BULK TRAPS IN THE METAL-OXIDE-SILICON STRUCTURE UNDER STRONG-INVERSION CONDITIONS.MAR HA; SIMMONS JG; TAYLOR GW et al.1977; SOLID STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 3; PP. 241-247; BIBL. 10 REF.Article