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Isotopic analysis with the laser microprobe mass analyzerSIMONS, D. S.International journal of mass spectrometry and ion processes. 1983, Vol 55, Num 1, pp 15-30Article

Single particle standards for isotopic measurements of uranium by secondary ion mass spectrometrySIMONS, D. S.Journal of trace and microprobe techniques. 1986, Vol 4, Num 3, pp 185-195, issn 0733-4680Article

MeV energy Fe and Co implants to obtain buried high resistance layers and to compensate donor implant tails in InPVELLANKI, J; NADELLA, R. K; RAO, M. V et al.Journal of applied physics. 1993, Vol 73, Num 3, pp 1126-1132, issn 0021-8979Article

Sb surface segregation and doping in Si(100) grown at reduced temperature by molecular beam epitaxyHOBART, K. D; GODBEY, D. J; THOMPSON, P. E et al.Applied physics letters. 1993, Vol 63, Num 10, pp 1381-1383, issn 0003-6951Article

Dependence of interface widths on ion bombardment conditions in secondary ion mass spectrometric analysis of a nickel/chromium multilayer structureMOENS, M; ADAMS, F. C; SIMONS, D. S et al.Analytical chemistry (Washington, DC). 1987, Vol 59, Num 11, pp 1518-1529, issn 0003-2700Article

Elevated temperature nitrogen implants in 6H-SiCGARDNER, J; RAO, M. V; HOLLAND, O. W et al.Journal of electronic materials. 1996, Vol 25, Num 5, pp 885-892, issn 0361-5235Article

The growth and characterization of Si1-xGex multiple quantum wells on Si(110) and Si(111)THOMPSON, P. E; KREIFELS, T. L; GREGG, M et al.Journal of crystal growth. 1995, Vol 157, Num 1-4, pp 21-26, issn 0022-0248Conference Paper

Cluster ion formation under laser bombardment. Studies of recombination using isotope labelingMUSSELMAN, I. H; LINTON, R. W; SIMONS, D. S et al.Analytical chemistry (Washington, DC). 1988, Vol 60, Num 2, pp 110-114, issn 0003-2700Article

Secondary ion yield changes in Si and GaAs due to topography changes during O+2 or Cs+ ion bombardmentSTEVIE, F. A; KAHORA, P. M; SIMONS, D. S et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1988, Vol 6, Num 1, pp 76-80, issn 0734-2101Article

Rapid-thermal annealing for quantum-well heterostructure device fabricationMYERS, D. R; VAWTER, G. A; COMAS, J et al.I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 1, pp 41-49, issn 0018-9383Article

Co, Fe, and Ti implants in InGaAs and Co implants in InP at 200°CRAO, M. V; GULWADI, S. M; SAVITRI MULPURI et al.Journal of electronic materials. 1992, Vol 21, Num 9, pp 923-928, issn 0361-5235Article

Molecular ion imaging and dynamic secondary ion mass spectrometry of organic compoundsGILLEN, G; SIMONS, D. S; WILLIAMS, P et al.Analytical chemistry (Washington, DC). 1990, Vol 62, Num 19, pp 2122-2130, issn 0003-2700Article

Laser desorption mass spectrometry of squaric acid and its saltsBYRD, G. D; FATIADI, A. J; SIMONS, D. S et al.Organic mass spectrometry. 1986, Vol 21, Num 2, pp 63-68, issn 0030-493XArticle

Proceedings/5th International conference on secondary ion mass spectrometry, Washington DC, September 30-October 4, 1985BENNINGHOVEN, A; COLTON, R. J; SIMONS, D. S et al.Springer series in chemical physics. 1986, Vol 44, issn 0172-6218, XXI-561 pConference Proceedings

Epitaxial Si-based tunnel diodesTHOMPSON, P. E; HOBART, K. D; TWIGG, M. E et al.Thin solid films. 2000, Vol 380, Num 1-2, pp 145-150, issn 0040-6090Conference Paper

Fe and Ti implants in In0.52Al0.48AsMARTIN, J. M; NADELLA, R. K; RAO, M. V et al.Journal of electronic materials. 1993, Vol 22, Num 9, pp 1153-1157, issn 0361-5235Article

Effects of sample geometry on interelement quantitation in laser microprobe mass spectrometryMUSSELMAN, I. H; SIMONS, D. S; LINTON, R. W et al.International journal of mass spectrometry and ion processes. 1992, Vol 112, Num 1, pp 19-43, issn 0168-1176Article

0.4-3.0-MeV-range Be-ion implantations into InP:FeNADELLA, R. K; RAO, M. V; SIMONS, D. S et al.Journal of applied physics. 1991, Vol 70, Num 6, pp 2973-2978, issn 0021-8979Article

10-20 MeV energy range Si implantations into InP:FeNADELLA, R. K; RAO, M. V; SIMONS, D. S et al.Journal of applied physics. 1991, Vol 70, Num 11, pp 7188-7190, issn 0021-8979Article

Range statistics and Rutherford backscattering studies on Fe-implanted In0.53Ga0.47AsGULWADI, S. M; RAO, M. V; SIMONS, D. S et al.Journal of applied physics. 1991, Vol 69, Num 1, pp 162-167, issn 0021-8979Article

Controlled p- and n-type doping of homo- and heteroepitaxially grown InSbTHOMPSON, P. E; DAVIS, J. L; MING-JEY YANG et al.Journal of applied physics. 1993, Vol 74, Num 11, pp 6686-6690, issn 0021-8979Article

MeV energy sulfur implantation in GaAs and InPJAYADEV VELLANKI; NADELLA, R. K; RAO, M. V et al.Journal of electronic materials. 1993, Vol 22, Num 5, pp 559-566, issn 0361-5235Conference Paper

Sb surface segregation during heavy doping of Si(100) grown at low temperature by molecular beam epitaxyHOBART, K. D; GODBEY, D. J; THOMPSON, P. E et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 3, pp 1115-1119, issn 1071-1023Conference Paper

Determination of uranium and thorium concentrations in soils : comparison of isotope dilution-secondary ion mass spectrometry and isotope dilution-thermal ionization mass spectrometryADRIAENS, A. G; FASSETT, J. D; KELLY, W. R et al.Analytical chemistry (Washington, DC). 1992, Vol 64, Num 23, pp 2945-2950, issn 0003-2700Article

High-energy Si implantation into InP:FeNADELLA, R. K; RAO, M. V; SIMONS, D. S et al.Journal of applied physics. 1991, Vol 70, Num 3, pp 1750-1757, issn 0021-8979Article

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