Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("SIS STRUCTURE")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 339

  • Page / 14
Export

Selection :

  • and

A MICROPROCESSOR-BASED STATIC TESTER FOR DIGITAL INTEGRATED CIRCUITSWAHAB AA; NAGARAJAN R; JEREW DH et al.1983; INTERNATIONAL JOURNAL OF ELECTRONICS THEORETICAL & EXPERIMENTAL; ISSN 0020-7217; GBR; DA. 1983; VOL. 54; NO 6; PP. 913-920; BIBL. 6 REF.Article

NON-LINEAR ANALYSIS OF AN S-I-S JOSEPHSON JUNCTIONMURAYAMA Y.1983; INTERNATIONAL JOURNAL OF ELECTRONICS THEORETICAL & EXPERIMENTAL; ISSN 0020-7217; GBR; DA. 1983; VOL. 54; NO 6; PP. 887-895; BIBL. 17 REF.Article

IMPEDANCE CONVERSION USING QUANTUM LIMIT NONRECIPROCITY FOR SUPERCONDUCTOR-INSULATOR-SUPERCONDUCTOR MIXER COMPENSATIONWHITELEY SR.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 9; PP. 842-843; BIBL. 8 REF.Article

Infinite gain and oscillations in sis microwave mixersVAN DER ZIEL, A.Physica, B + C. 1983, Vol 121, Num 1-2, pp 53-54, issn 0378-4363Article

Simulation of the sub-harmonic SIS mixerSHAN, W. L; SHI, S. C; FENG, Y. J et al.Physica. C. Superconductivity and its applications. 2000, Vol 341-48, pp 2717-2718, 4Conference Paper

Semi-insulating properties of Fe-implanted InP. I: Current-limiting properties of n+-semi-insulating-n+ structuresCHENG, J; FORREST, S. R; TELL, B et al.Journal of applied physics. 1985, Vol 58, Num 5, pp 1780-1786, issn 0021-8979Article

COMMUTATION EN S DANS LES STRUCTURES DE SEMICONDUCTEURS A DENSITE DE COURANT ELEVEEKARDO SYSOEV AF; PANYUTIN EA; CHASHNIKOV IG et al.1976; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1976; VOL. 10; NO 8; PP. 1486-1489; BIBL. 8 REF.Article

ENTRAINEMENT MUTUEL DES PORTEURS DANS LE SYSTEME SEMICONDUCTEUR-DIELECTRIQUE-SEMICONDUCTEURPOGREBINSKIJ MB.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 4; PP. 637-644; BIBL. 11 REF.Article

NEGATIVE DYNAMIC CONDUCTANCE FROM PHOTON-ASSISTED TUNNELLING IN SUPERCONDUCTING JUNCTIONSROUKES ML; WILKINS JW.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 8; PP. 767-769; BIBL. 19 REF.Article

Use of a focused ion beam for characterizing SIS circuitsBASS, Robert B; CLARK, William W; ZHANG, Jian Z et al.IEEE transactions on applied superconductivity. 2001, Vol 11, Num 1, pp 92-94, issn 1051-8223, 1Conference Paper

Frequency conversion of LO harmonics SIS mixerBELISTKY, V. YU; VYSTAVKIN, A. N; SERPUCHENKO, L. L et al.Radiotehnika i èlektronika. 1990, Vol 35, Num 1, pp 191-201, issn 0033-8494Article

SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR (SIS) SOLAR CELLS: INDIUM-TIN-OXIDE ON SILICONBURK D; SHEWCHUN J; SPITZER M et al.1980; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 1980. 14/1980/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1980; PP. 1376-1383; BIBL. 12 REF.Conference Paper

QUASIPARTICLE HETERODYNE MIXING IN SIS TUNNEL JUNCTIONSRICHARDS PL; SHEN TM; HARRIS RE et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 5; PP. 345-347; BIBL. 9 REF.Article

MAJORITY CARRIER CONDUCTION EFFECTS IN ITO/SIS SOLAR CELLSDUBOW J; KAR S.1980; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 1980. 14/1980/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1980; PP. 619-622Conference Paper

THE SIS TUNNEL EMITTER: A THEORY FOR EMITTERS WITH THIN INTERFACE LAYERSDE GRAAFF HC; DE GROOT JG.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 11; PP. 1771-1776; BIBL. 14 REF.Article

INFLUENCE OF AN INSULATING LAYER ON THE EFFICIENCY OF A SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR (SIS) HETEROJUNCTION SOLAR CELLPAUWELS HJ; DE VISSCHERE P.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 4; PP. 693-698; BIBL. 9 REF.Article

EFFET ACOUSTOMAGNETOELECTRIQUE DANS UNE STRUCTURE STRATIFIEEGAVRILIN VI; GULYAEV AM; BASHKIROV AM et al.1980; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1980; VOL. 50; NO 6; PP. 1343-1345; BIBL. 8 REF.Article

SIS SOLAR CELL THEORY AND CALCULATIONSSEN K; SRIVASTAVA RS.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 69; NO 1; PP. 413-418; ABS. GER; BIBL. 11 REF.Article

ELECTRICAL MEASUREMENTS ON N+-GAAS-UNDOPED GA0.6AL0.4AS-N-GAAS CAPACITORSSOLOMON PM; HICMOTT TW; MORKOC H et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 9; PP. 821-823; BIBL. 12 REF.Article

FOWLER-NORDHEIM EMISSION FROM NON-PLANAR SURFACESELLIS RK.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 11; PP. 330-332; BIBL. 9 REF.Article

OSCILLATIONS QUANTIQUES DU MOMENT MAGNETIQUE DANS UN SYSTEME EN DESEQUILIBRE AVEC FORMATION DE PAIRES ELECTRON-TROUMNATSAKANOV TT.1977; ZH. EKSPER. TEOR. FIZ.; S.S.S.R.; DA. 1977; VOL. 72; NO 1; PP. 262-271; ABS. ANGL.; BIBL. 10 REF.Article

DIFFUSIVE QUASIPARTICLE INSTABILITY TOWARD MULTIPLE-GAP STATES IN A TUNNEL-INJECTED NONEQUILIBRIUM SUPERCONDUCTORIGUCHI I; LANGENBERG DN.1980; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1980; VOL. 44; NO 7; PP. 486-489; BIBL. 13 REF.Article

A superconducting X-ray spectrometer with a tantalum absorber and lateral trappingGAIDIS, M. C; FRIEDRICH, S; SEGALL, K et al.IEEE transactions on applied superconductivity. 1996, Vol 6, Num 1, pp 1-4, issn 1051-8223Article

Thickness determination of poly-Si/poly-oxide/poly-Si/SiO2/Si structure by ellipsometerCHAO, T. S; LEE, C. L; LEI, T. F et al.Electronics Letters. 1993, Vol 29, Num 13, pp 1157-1159, issn 0013-5194Article

Study of carrier trapping in stacked dielectricsNOZAKI, S; GIRIDHAR, R. V.IEEE electron device letters. 1986, Vol EDL-7, Num 8, pp 486-489, issn 0741-3106Article

  • Page / 14