Electron paramagnetic resonance in Zn₃P₂KOMOROWSKA, M; SITAREK, P; MISIEWICZ, J et al.Physica status solidi. A. Applied research. 1994, Vol 144, Num 1, pp 189-193, issn 0031-8965Article

Excitation mechanism of europium ions embedded into TiO₂ nanocrystalline matrixPODHORODECKI, A; ZATRYB, G; SITAREK, P et al.Thin solid films. 2009, Vol 517, Num 23, pp 6331-6333, issn 0040-6090, 3 p.Conference Paper

Influence of nitrogen on carrier localization in InGaAsN/GaAs single quantum wellsMISIEWICZ, J; SITAREK, P; RYCZKO, K et al.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 737-739, issn 0959-8324, 3 p.Conference Paper

Photoluminescence and modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wellsHSU, H. P; SITAREK, P; HUANG, Y. S et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 2, pp 430-438, issn 1862-6300, 9 p.Conference Paper

Three beam photoreflectance as a powerful method to investigate semiconductor heterostructuresKUDRAWIEC, R; SEK, G; SITAREK, P et al.Thin solid films. 2004, Vol 450, Num 1, pp 71-74, issn 0040-6090, 4 p.Conference Paper

Epitaxial growth and characterisation of silicon delta-doped GaAs, AlAs and Al_xGa_1-xAsSCIANA, B; RADZIEWICZ, D; PASZKIEWICZ, B et al.Crystal research and technology (1979). 2001, Vol 36, Num 8-10, pp 1145-1154, issn 0232-1300Conference Paper

Modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wellsHSU, H. P; SITAREK, P; HUANG, Y. S et al.Journal of physics. Condensed matter (Print). 2006, Vol 18, Num 26, pp 5927-5935, issn 0953-8984, 9 p.Article

MOVPE technology and characterisation of silicon δ-doped GaAs and Al_xGa_1-xAsSCIANA, B; RADZIEWICZ, D; SRNANEK, R et al.Thin solid films. 2002, Vol 412, Num 1-2, pp 55-59, issn 0040-6090Conference Paper

Properties of MBE grown CdYbTe and ZnYbTe on GaAs(100) substratesSADOWSKI, J; DYNOWSKA, E; SZAMOTA-SADOWSKA, K et al.Journal of crystal growth. 1996, Vol 159, Num 1-4, pp 1075-1079, issn 0022-0248Conference Paper

Evidence of type-II band alignment at the ordered GalnNP to GaAs heterointerfaceHSU, H. P; HUANG, Y. N; HUANG, Y. S et al.Physica status solidi. A, Applications and materials science (Print). 2009, Vol 206, Num 5, pp 803-807, issn 1862-6300, 5 p.Conference Paper

Piezoreflectance and photoreflectance study of annealing effects on GaAs_0.916Sb_0.084 and GaAs_0.906Sb_0.075N_0.019 films on GaAs grown by gas-source molecular beam epitaxyHSU, H. P; HUANG, Y. N; HUANG, Y. S et al.Physica status solidi. A, Applications and materials science (Print). 2009, Vol 206, Num 5, pp 830-835, issn 1862-6300, 6 p.Conference Paper

Photomodulated reflectance and transmittance: optical characterisation of novel semiconductor materials and device structuresMISIEWICZ, J; SEK, G; KUDRAWIEC, R et al.Thin solid films. 2004, Vol 450, Num 1, pp 14-22, issn 0040-6090, 9 p.Conference Paper

Partially strained Si_1-xGe_x/Si structures investigated by photoreflectance spectroscopySITAREK, P; MISIEWICZ, J; NAUKA, K et al.SPIE proceedings series. 1999, pp 214-217, isbn 0-8194-3199-0Conference Paper

Photoreflectance investigations of Al_xGa_1-xAs\GaAs band-gap dependence on Al contentSITAREK, P; MISIEWICZ, J; VEJE, E et al.SPIE proceedings series. 1999, pp 205-208, isbn 0-8194-3199-0Conference Paper

Investigations of allowed and forbidden transitions in (AlGa)As/GaAs multiple quantum wellsSITAREK, P; SEK, G; MISIEWICZ, J et al.Vacuum. 1998, Vol 50, Num 1-2, pp 203-205, issn 0042-207XConference Paper