POWDER METALLURGY IN ISRAELBARTA J; SIVAN R.1978; POWDER METALLURGY INTERNATION.; DEU; DA. 1978; VOL. 10; NO 4; PP. 181-182; ABS. GER/FRE; BIBL. 1 REF.Article

Le musée d'histoireSIVAN, R.Dossiers d'Archéologie (Les). 1991, Num 165-166, pp 132-137Article

LINEAR-QUADRATIC-GAUSSIAN CONTROL WITH ONE-STEP-DELAY SHARING PATTERN. = COMMANDE OPTIMALE LINEAIRE-QUADRATIQUE-GAUSSIENNE AVEC RETARD D'INFORMATION UNITEKURTARAN BZ; SIVAN R.1974; I.E.E.E. TRANS. AUTOMAT. CONTROL; U.S.A.; DA. 1974; VOL. 19; NO 5; PP. 571-574; BIBL. 8 REF.Article

Eliezer Ben Yehuda's Contribution to the Revival of the Hebrew Langage En hébreuFELMAN Y; SIVAN R; ORNAN U et al.Cathedra for the History of Eretz Israel and Its Yishuv. 1976, Num 2, pp 81-107Article

Design of closed-loop systems with bounded transmission or bounded sensitivityGROSS, Y; SIVAN, R.International Journal of Control. 1987, Vol 46, Num 3, pp 1041-1060, issn 0020-7179Article

Maximal stability robustress for state equationsLEWKOWICZ, I; SIVAN, R.IEEE transactions on automatic control. 1988, Vol 33, Num 3, pp 297-300, issn 0018-9286Article

Stability robustness of almost linear state equationsLEWKOWICZ, I; SIVAN, R.IEEE transactions on automatic control. 1993, Vol 38, Num 2, pp 262-266, issn 0018-9286Article

Disposable polysilicon LDD spacer technologyPARRILLO, L. C; PFIESTER, J. R; JUNG-HUI LIN et al.I.E.E.E. transactions on electron devices. 1991, Vol 38, Num 1, pp 39-46, issn 0018-9383, 8 p.Article

A self-aligned elevated source/drain MOSFETPFIESTER, J. R; SIVAN, R. D; MING LIAW, H et al.IEEE electron device letters. 1990, Vol 11, Num 9, pp 365-367, issn 0741-3106, 3 p.Article

A selectively deposited poly-gate ITLDD process with self-aligned LDD/channel implantationPFIESTER, J. R; BAKER, F. K; SIVAN, R. D et al.IEEE electron device letters. 1990, Vol 11, Num 6, pp 253-255, issn 0741-3106Article

An ITLDD CMOS process with self-aligned reverse-sequence LDD/channel implantationPFIESTER, J. R; SIVAN, R. D; GUNDERSON, C. D et al.I.E.E.E. transactions on electron devices. 1991, Vol 38, Num 11, pp 2460-2464, issn 0018-9383Article

A high-performance half-micrometer generation CMOS technology for fast SRAM'sHAYDEN, J. D; BAKER, F. K; PARRILLO, L. C et al.I.E.E.E. transactions on electron devices. 1991, Vol 38, Num 4, pp 876-886, issn 0018-9383Article