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Charge trapping in high-dose Ge-implanted and Si-implanted silicon-dioxide thin filmsNAZAROV, A. N; OSIYUK, I. N; TYAGULSKII, I. P et al.Proceedings - Electrochemical Society. 2003, pp 144-149, issn 0161-6374, isbn 1-56677-347-4, 6 p.Conference Paper

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