Papers selected from the 35th European Solid-State Device Research Conference - ESSDERC'05GHIBAUDO, G; SKOTNICKI, T.Solid-state electronics. 2006, Vol 50, Num 4, issn 0038-1101, 208 p.Conference Proceedings

A new approach to threshold voltage modelling of short-channel MOSFETsSKOTNICKI, T; MARCINIAK, W.Solid-state electronics. 1986, Vol 29, Num 11, pp 1115-1127, issn 0038-1101Article

Calculations of hole mass in [110]-uniaxially strained silicon for the stress-engineering of p-MOS transistorsGUILLAUME, T; MOUIS, M.Solid-state electronics. 2006, Vol 50, Num 4, pp 701-708, issn 0038-1101, 8 p.Conference Paper

The voltage-doping transformation: a new approach to the modeling of MOSFET short-channel effectsSKOTNICKI, T; MERCKEL, G; PEDRON, T et al.IEEE electron device letters. 1988, Vol 9, Num 3, pp 109-112, issn 0741-3106Article

Triggering and sustaining of snapback in MOSFETsSKOTNICKI, T; MERCKEL, G; DENAT, C et al.Solid-state electronics. 1992, Vol 35, Num 5, pp 717-721, issn 0038-1101Article

Analytical study of punchthrough in buried channel P-MOSFET'sSKOTNICKI, T; MERCKEL, G; PEDRON, T et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 4, pp 690-705, issn 0018-9383, 16 p.Article

Nanotechnology : Role in emerging nanoelectronicsYU, B; MEYYAPPAN, M.Solid-state electronics. 2006, Vol 50, Num 4, pp 536-544, issn 0038-1101, 9 p.Conference Paper

Advanced memory concepts for DRAM and nonvolatile memoriesHORIGUCHI, Fumio.Solid-state electronics. 2006, Vol 50, Num 4, pp 545-550, issn 0038-1101, 6 p.Conference Paper

Do hot electrons cause excess noise?JUNGEMANN, C; MEINERZHAGEN, B.Solid-state electronics. 2006, Vol 50, Num 4, pp 674-679, issn 0038-1101, 6 p.Conference Paper

Pushing CMOS beyond the roadmapRISCH, L.Solid-state electronics. 2006, Vol 50, Num 4, pp 527-535, issn 0038-1101, 9 p.Conference Paper

A new punchthrough current model based on the voltage-doping transformationSKOTNICKI, T; MERCKEL, G; PEDRON, T et al.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 7, pp 1076-1086, issn 0018-9383Article

Low temperature characterization of effective mobility in uniaxially and biaxially strained nMOSFETsLIME, F; ANDRIEU, F; DERIX, J et al.Solid-state electronics. 2006, Vol 50, Num 4, pp 644-649, issn 0038-1101, 6 p.Conference Paper

Mobility enhancement by CESL strain in short-channel ultrathin SOI MOSFETsPHAM-NGUYEN, L; FENOUILLET-BERANGER, C; GHIBAUDO, G et al.Solid-state electronics. 2010, Vol 54, Num 2, pp 123-130, issn 0038-1101, 8 p.Article

Gate-all-around technology: Taking advantage of ballistic transport?HUGUENIN, J. L; BIDAL, G; ORLANDO, B et al.Solid-state electronics. 2010, Vol 54, Num 9, pp 883-889, issn 0038-1101, 7 p.Conference Paper

FDSOI devices with thin BOX and ground plane integration for 32 nm node and belowFENOUILLET-BERANGER, C; DENORME, S; CASSE, M et al.Solid-state electronics. 2009, Vol 53, Num 7, pp 730-734, issn 0038-1101, 5 p.Conference Paper

Folded fully depleted FET using Silicon-On-Nothing technology as a highly W-scaled planar solutionBIDAL, G; LOUBET, N; BARNOLA, S et al.Solid-state electronics. 2009, Vol 53, Num 7, pp 735-740, issn 0038-1101, 6 p.Conference Paper

Silicon nanostructuring for 3D bulk silicon versatile devicesBOPP, M; CORONEL, P; BUSTOS, J et al.Microelectronic engineering. 2009, Vol 86, Num 4-6, pp 885-888, issn 0167-9317, 4 p.Conference Paper

Integration of PtSi in p-Type MOSFETs Using a Sacrificial Low-Temperature Germanidation ProcessBREIL, N; DUBOIS, E; HALIMAOUI, A et al.IEEE electron device letters. 2008, Vol 29, Num 2, pp 152-154, issn 0741-3106, 3 p.Article

Mechanisms of charge modulation in the floating body of triple-well nMOSFET capacitor-less DRAMsVILLARET, A; RANICA, R; MASSON, P et al.Microelectronic engineering. 2004, Vol 72, Num 1-4, pp 434-439, issn 0167-9317, 6 p.Conference Paper

Coulomb-blockade in nanometric Si-film silicon-on-nothing (SON) MOSFETsMONFRAY, S; SOUIFI, A; BOEUF, F et al.IEEE transactions on nanotechnology. 2003, Vol 2, Num 4, pp 295-300, issn 1536-125X, 6 p.Conference Paper

New metal gate architecture achieved by chemical vapor deposition for a complete tunnel fillREGNIER, C; WACQUANT, F; LEVERD, F et al.Proceedings - Electrochemical Society. 2003, pp 391-396, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

High performance 40nm nMOSFETs with HfO₂ gate dielectric and polysilicon damascene gateTAVEL, B; GARROS, X; LEVERD, F et al.IEDm : international electron devices meeting. 2002, pp 429-432, isbn 0-7803-7462-2, 4 p.Conference Paper

50nm: Gate all around (GAA): Silicon on nothing (SON): Devices: A simple way to co-integration of GAA transistors within bulk MOSFET processMONFRAY, S; SKOTNICKI, T; HAOND, M et al.Symposium on VLSI technology. 2002, pp 108-109, isbn 0-7803-7312-X, 2 p.Conference Paper

SON (Silicon-On-Nothing) P-MOSFETs with totally silicided (CoSi₂) polysilicon on 5nm-thick Si-films: The simplest way to integration of metal gates on thin FD channelsMONFRAY, S; SKOTNICKI, T; LEVERD, F et al.IEDm : international electron devices meeting. 2002, pp 263-266, isbn 0-7803-7462-2, 4 p.Conference Paper

Semi-flexible bimetal-based thermal energy harvestersBOISSEAU, S; DESPESSE, G; MONFRAY, S et al.Smart materials and structures. 2013, Vol 22, Num 2, issn 0964-1726, 025021.1-025021.8Article