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Double layer a-Si:H/SiN:H deposited at low temperature for the passivation of N-type siliconSCHUTZ-KUCHLY, T; SLAOUI, A.Applied physics. A, Materials science & processing (Print). 2013, Vol 112, Num 4, pp 863-867, issn 0947-8396, 5 p.Article

Rupture de l'auricule droit après traumatisme thoracique fermé secondaire à un coup de sabot = Right atrial rupture following a hoof kick to the chest wallALAMI, A. A; SLAOUI, A.Annales françaises d'anesthésie et de réanimation. 2003, Vol 22, Num 2, pp 137-139, issn 0750-7658, 3 p.Article

Growth kinetics and crystallographic properties of polysilicon thin films formed by aluminium-induced crystallizationPIHAN, E; SLAOUI, A; MAURICE, C et al.Journal of crystal growth. 2007, Vol 305, Num 1, pp 88-98, issn 0022-0248, 11 p.Article

Properties of silicon dioxide films prepared by pulsed-laser ablationSLAOUI, A; FOGARASSY, E; FUCHS, C et al.Journal of applied physics. 1992, Vol 71, Num 2, pp 590-596, issn 0021-8979Article

Boron doping of silicon by excimer laser irradiation in a reactive atmosphere : the incorporation mechanismSLAOUI, A; FOULON, F; STUCK, R et al.Applied physics. A, Solids and surfaces. 1990, Vol 50, Num 5, pp 479-484, issn 0721-7250Article

Impurity diffusion from uncoated foreign substrates during high temperature CVD for thin-film Si solar cellsBEAUCARNE, G; BOURDAIS, S; SLAOUI, A et al.Solar energy materials and solar cells. 2000, Vol 61, Num 3, pp 301-309, issn 0927-0248Article

Growth kinetics and polysilicon formation by aluminium-induced crystallization on glass-ceramic substratesTÜZÜN, Ö; SLAOUI, A; MAURICE, C et al.Applied physics. A, Materials science & processing (Print). 2010, Vol 99, Num 1, pp 53-61, issn 0947-8396, 9 p.Article

Kystes hydatiques du foie : classification à visée thérapeutique et pronostique 378 observations = Hepatic hydatic cysts : therapeutic and prognostic classification of 378 casesSETTAF, A; MANSORI, F; SEFRIOUI, A et al.La Presse médicale (1983). 1994, Vol 23, Num 8, pp 362-366, issn 0755-4982Article

Thin-film polycrystalline Si solar cells on foreign substrates: film formation at intermediate temperatures (700-1300 °C)BEAUCARNE, G; BOURDAIS, S; SLAOUI, A et al.Applied physics. A, Materials science & processing (Print). 2004, Vol 79, Num 3, pp 469-480, issn 0947-8396, 12 p.Article

Nucleation and growth of silicon on ceramic substrates by RTCVD at atmospheric pressureSLAOUI, A; BOURDAIS, S.Journal de physique. IV. 2001, Vol 83, pp Pr3.301-Pr3.306, issn 1155-4339Conference Paper

Silicon deposition on mullite ceramic substrates for thin-film solar cellsBOURDAIS, S; MAZEL, F; FANTOZZI, G et al.Progress in photovoltaics. 1999, Vol 7, Num 6, pp 437-447, issn 1062-7995Article

Caractéristiques courant-tension de jonctions P-N fabriquées par traitement laser = I-V characteristics of P-N junctions prepared by laser treatmentFOGARASSY, E; SLAOUI, A; SIFFERT, P et al.Revue de physique appliquée. 1985, Vol 20, Num 3, pp 157-162, issn 0035-1687Article

LA SYMPATHECTOMIE "CHIMIQUE" TRANSITOIREBENYAHIA B; SLAOUI A; SEFRIOUI A et al.1981; CHIRURGIE; ISSN 0001-4001; FRA; DA. 1981; VOL. 107; NO 5; PP. 361-366; ABS. ENG; BIBL. 14 REF.Article

Crystallographic analysis of polysilicon films formed on foreign substrates by aluminium induced crystallisation and epitaxyPIHAN, E; FOCSA, A; SLAOUI, A et al.Thin solid films. 2006, Vol 511-12, pp 15-20, issn 0040-6090, 6 p.Conference Paper

Excimer laser crystallization of amorphous silicon on metallic substrateDELACHAT, F; ANTONI, F; SLAOUI, A et al.Applied physics. A, Materials science & processing (Print). 2013, Vol 111, Num 3, pp 807-812, issn 0947-8396, 6 p.Article

Modeling of CW laser diode irradiation of amorphous silicon filmsSAID-BACAR, Z; LEROY, Y; ANTONI, F et al.Applied surface science. 2011, Vol 257, Num 12, pp 5127-5131, issn 0169-4332, 5 p.Conference Paper

A new way to selectively remove Si islands from polycrystalline silicon seed layers made by aluminum-induced crystallizationVAN GESTEL, Dries; GORDON, Ivan; VERBIST, Agnes et al.Thin solid films. 2008, Vol 516, Num 20, pp 6907-6911, issn 0040-6090, 5 p.Conference Paper

EBSD analysis of polysilicon films formed by aluminium induced crystallization of amorphous siliconTÜZÜN, O; AUGER, J. M; GORDON, I et al.Thin solid films. 2008, Vol 516, Num 20, pp 6882-6887, issn 0040-6090, 6 p.Conference Paper

Growth and physical behaviour of Zn1-xMgxO filmsSURYANARAYANA REDDY, A; PRATHAP, P; SUBBAIAH, Y. P. V et al.Thin solid films. 2008, Vol 516, Num 20, pp 7084-7087, issn 0040-6090, 4 p.Conference Paper

Hydrazone based molecular glasses for solid-state dye-sensitized solar cellsAICH, R; TRAN-VAN, F; GOUBARD, F et al.Thin solid films. 2008, Vol 516, Num 20, pp 7260-7265, issn 0040-6090, 6 p.Conference Paper

Implementation of a Monte Carlo method to model photon conversion for solar cellsDEL CANIZO, C; TOBIAS, I; PEREZ-BEDMAR, J et al.Thin solid films. 2008, Vol 516, Num 20, pp 6757-6762, issn 0040-6090, 6 p.Conference Paper

Large-grained poly-Si films on ZnO:Al coated glass substratesLEE, K. Y; MUSKE, M; GORDON, I et al.Thin solid films. 2008, Vol 516, Num 20, pp 6869-6872, issn 0040-6090, 4 p.Conference Paper

Metastability of SiNx/a-Si:H crystalline silicon surface passivation for PV applicationTUCCI, Mario; SERENELLI, Luca.Thin solid films. 2008, Vol 516, Num 20, pp 6939-6942, issn 0040-6090, 4 p.Conference Paper

Micro and nano-structuration of silicon by femtosecond laser : Application to silicon photovoltaic cells fabricationHALBWAX, M; SARNET, T; DELAPORTE, Ph et al.Thin solid films. 2008, Vol 516, Num 20, pp 6791-6795, issn 0040-6090, 5 p.Conference Paper

New method for interface characterization in heterojunction solar cells based on diffusion capacitance measurementsGUDOVSKIKH, A. S; CHOUFFOT, R; KLEIDER, J. P et al.Thin solid films. 2008, Vol 516, Num 20, pp 6786-6790, issn 0040-6090, 5 p.Conference Paper

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