FEEDBACK-INDUCED NOISE IN INDEX-GUIDED SEMICONDUCTOR LASERS AND ITS REDUCTION BY MODULATIONSTUBKJAER K; SMALL MB.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 10; PP. 388-390; BIBL. 5 REF.Article

GROWTH AND DISSOLUTION KINETICS OF III-V HETEROSTRUCTURES FORMED BY CPESMALL MB; GHEZ R.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 8; PP. 5323-5330; BIBL. 30 REF.Article

CONDITIONS FOR CONSTANT GROWTH RATE BY LPE FROM A COOLING, STATIC SOLUTION.SMALL MB; GHEZ R.1978; J. CRYST. GROWTH; NETHERL.; DA. 1978; VOL. 43; NO 4; PP. 512-514; BIBL. 19 REF.Article

GROWTH AND DISSOLUTION KINETICS OF TERNARY III-V HETEROSTRUCTURES FORMED BY LIQUID-PHASE EPITAXY. III: EFFECTS OF TEMPERATURE PROGRAMMINGGHEZ R; SMALL MB.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 7; PP. 4907-4918; BIBL. 30 REF.Article

WAVE MORPHOLOGIES ON THE SURFACE OF GAAS AND GA5⁰,65)AL⁰,35)AS GROWN BY LPE.SMALL MB; POTEMSKI RM.1977; J. CRYST. GROWTH; NETHERL.; DA. 1977; VOL. 37; NO 2; PP. 163-168; BIBL. 26 REF.Article

THE PHYSICAL PROCESSES OCCURRING DURING LIQUID PHASE EPITAXIAL GROWTH.SMALL MB; CROSSLEY I.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 27; PP. 35-48; BIBL. 70 REF.Article

CONTACT ANGLES BETWEEN (GAAL)AS SOLID AND SOLUTIONSPOTEMSKI RM; SMALL MB.1983; JOURNAL OF CRYSTAL GROWTH; ISSN 0022-0248; NLD; DA. 1983; VOL. 62; NO 2; PP. 317-319; BIBL. 5 REF.Article

GROWTH AND DISSOLUTION KINETICS OF III-V HETEROSTRUCTURES FORMED BY LPE. II: COMPARISONS BETWEEN THERMODYNAMIC AND KINETIC MODELSSMALL MB; GHEZ R.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 3; PP. 1589-1592; BIBL. 10 REF.Article

A NEW STRUCTURE FOR HIGH-POWERED INJECTION LASERSSMALL MB; LYNCH RT JR.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 10; PP. 6051-6053; BIBL. 14 REF.Article

EFFECT OF CAVITY LENGTH ON STRIPE-GEOMETRY DH LASER OUTPUT LINEARITYLYNCH RT JR; SMALL MB; HUNG RY et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 4; PP. 297-299; BIBL. 14 REF.Article

ENHANCED TRANSFORMATION OF HUMAN FIBROBLASTS BY ORIGIN DEFECTIVE SIMIAN VIRUS 40SMALL MB; GLUZMAN Y; OZER HL et al.1982; NATURE (LOND.); ISSN 0028-0836; GBR; DA. 1982; VOL. 296; NO 5858; PP. 671-672; BIBL. 22 REF.Article

SHALLOW ZINC DIFFUSION IN LIQUID PHASE EPITAXIAL GAAS AND (GAAL)AS AT 600^OCBLUM SE; SMALL MB; GUPTA D et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 1; PP. 108-110; BIBL. 14 REF.Article

THE BEHAVIOR OF DISLOCATION IN GAAS SUBSTRATES DURING THE GROWTH OF GA_XAL_1-XAS EPITAXIAL LAYERSBOOYENS H; BASSON JH; SMALL MB et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 6; PP. 4112-4114; BIBL. 10 REF.Article

AN AUTOMATED SYSTEM FOR THE GROWTH OF MULTILAYERED STRUCTURES IN THE (GAAL) AS SYSTEM BY LPESMALL MB; BLACKWELL JC; POTEMSKI RM et al.1979; J. CRYST. GROWTH; NLD; DA. 1979; VOL. 46; NO 2; PP. 253-261; BIBL. 20 REF.Article

A RADIOTRACER SYSTEM FOR ^119MSN USING TIME-INTERVAL ANALYSIS.HERSEE SD; MCBETH GW; SMALL MB et al.1975; J. PHYS. D; G.B.; DA. 1975; VOL. 8; NO 13; PP. 1600-1614; H.T. 3; BIBL. 7 REF.Article

AL DIFFUSIVITY AS A FUNCTION OF GROWTH RATE DURING THE FORMATION OF (GAAL) AS HETEROJUNCTIONS BY LIQUID PHASE EPITAXYSMALL MB; GHEZ R; REUTER W et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 2; PP. 814-817; BIBL. 16 REF.Article

THE FORMATION OF GA_1-XAL_XAS LAYERS ON THE SURFACE OF GAAS DURING CONTINUAL DISSOLUTION INTO GA-AL-AS SOLUTIONSSMALL MB; GHEZ R; POTEMSKI RM et al.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 3; PP. 209-210; BIBL. 11 REF.Article

ANOMALOUS DIFFUSION BEHAVIOR OF MG IN GAASSMALL MB; POTEMSKI RM; REUTER W et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 11; PP. 1068-1070; BIBL. 14 REF.Article

THE DISSOLUTION KINETICS OF GAAS IN UNDERSATURATED ISOTHERMAL SOLUTIONS IN THE GA-AL-AS SYSTEMSMALL MB; GHEZ R; POTEMSKI RM et al.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 5; PP. 1177-1182; BIBL. 20 REF.Article