ETAGE D'ENTREE POTENTIEL D'UN DISPOSITIF A COUPLAGE PAR CHARGE EN REGIME DE FAIBLES SIGNAUXVINETSKIJ YU R; TRISHENKOV MA.1981; RADIOTEKH. I ELEKTRON.; SUN; DA. 1981; VOL. 26; NO 4; PP. 852-865; BIBL. 14 REF.Article

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EIGENMODE INTERACTIONS IN GYROTRON ELECTRON BEAMSDOEHLER O; DOEHLER G; SMITH ST et al.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 10; PP. 1655-1661; BIBL. 10 REF.Article

INFLUENCE OF CARRIER TRANSIT TIME ON THE SMALL-SIGNAL ADMITTANCE OF SCLC DIODES.JAGER D; HEIDE MANN R; KASSING R et al.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 42; NO 2; PP. 657-665; ABS. ALLEM.; BIBL. 10 REF.Article

SMALL-SIGNAL RESPONSE OF A GERMANIUM MAGNETODIODE.PFLEIDERER H; STRANSKY G.1977; NACHR.-TECH. Z.; DTSCH.; DA. 1977; VOL. 30; NO 4; PP. 330-333; ABS. ALLEM.; BIBL. 22 REF.Article

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SMALL SIGNAL FREQUENCY CHARACTERISTIC OF ELECTROLUMINESCENT DIODESKUCERA L; SNEJDAR V; BARANKOVA H et al.1979; ACTA TECH. C.S.A.V.; CSK; DA. 1979; VOL. 24; NO 4; PP. 466-476; BIBL. 13 REF.Article

THE INTERNAL DYNAMICS AND SMALL SIGNAL ANALYSIS OF BARITT DIODESRAZOUK RR; GUNSHOR RL; RAZOUK LR et al.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 12; PP. 1011-1015; BIBL. 10 REF.Article

A LONG-CHANNEL MOSFET MODELVAN DE WIELE F.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 12; PP. 991-997; BIBL. 6 REF.Article

A SMALL SIGNAL NOISE ANALYSIS FOR REALISTIC GAAS IMPATT DIODE.MATHUR PC; VIJENDER SHARMA; PRAVEEN SAXENA et al.1978; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1978; VOL. 46; NO 1; PP. 321-326; ABS. ALLEM.; BIBL. 10 REF.Article

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FURTHER COMMENTS ON "EFFECTS OF CARRIER DIFFUSION ON THE SMALL-SIGNAL BEHAVIOR OF IMPATT DIODES"BRAZIL TJ; SCANLAN JO.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 11; PP. 2167; BIBL. 2 REF.Article

COMPUTER AIDED CHARACTERIZATION OF BIPOLAR TRANSISTOR FOR CAD APPLICATIONSANTOGNETTI P; BERRINI A; VALLINI P et al.1979; ALTA FREQ.; ITA; DA. 1979; VOL. 48; NO 7; PP. 420-424; BIBL. 6 REF.Article

A SMALL-SIGNAL ANALYTICAL THEORY FOR GAAS FIELD-EFFECT TRANSISTORS AT LARGE DRAIN VOLTAGESSONE J; TAKAYAMA Y.1978; I.E.E.E. TRANS. ELECTRON. DEVICES; USA; DA. 1978; VOL. 25; NO 3; PP. 329-337; BIBL. 20 REF.Article

VIERPOLPARAMETER UND KLEINSIGNALERSATZSCHALTBILD DES BIPOLARTRANSISTORS BEI KLEINEN RUHESTROEMEN. = PARAMETRES DU QUADRIPOLE ET SCHEMA EQUIVALENT EN REGIME DE SIGNAL FAIBLE DU TRANSISTOR BIPOLAIRE DANS LE CAS DE FAIBLES COURANTS DE REPOSSEIFART M.1977; WISSENSCH. Z. TECH. HOCHSCH. OTTO VON GUERICKE MAGDEBURG; DTSCH.; DA. 1977; VOL. 21; NO 1(2); PP. 173-176; BIBL. 7 REF.Article

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