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RESPONSE OF SOME SOLID STATE DETECTORS TO 200 MEV PROTONSSPURNY F; POPOV VI.1982; RADIATION PROTECTION DOSIMETRY; ISSN 508306; GBR; DA. 1982; VOL. 3; NO 1-2; PP. 51-54; BIBL. 13 REF.Article

SOLID-STATE COMPONENT PERFORMANCE SOARS AS DEVICES AND CIRCUITS MATURE1979; MICROWAVES; USA; DA. 1979; VOL. 18; NO 4; PP. 19-20Article

REDRESSEUR BASSE TENSION SANS TRANSFORMATEUR, DU TYPE CASCADE, A RENDEMENT ACCRUZOTOV LG; ZOLOTAREV IV.1979; PRIBORY TEKH. EKSPER.; SUN; DA. 1979; NO 3; PP. 154-159; BIBL. 7 REF.Article

A THEORETICAL AND EXPERIMENTAL ANALYSIS OF MODULATED LASER FIELDS AND POWER SPECTRAOLESEN H; JACOBSEN G.1982; IEEE JOURNAL OF QUANTUM ELECTRONICS; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 12; PP. 2069-2080; BIBL. 23 REF.Article

NEW SCHEME FOR ULTRASHORT-PULSED NDU3U+:YAG LASER OPERATION: A BRANCHED CAVITY, INTERNALLY SEEDED REGENERATIVE AMPLIFIERBOCZAR BP; TOPP MR.1983; APPLIED OPTICS; ISSN 0003-6935; USA; DA. 1983; VOL. 22; NO 11; PP. 1611-1613; BIBL. 12 REF.Article

DYNAMIC OPTICAL DISTORTIONS IN RUBY LASERSAIT AMEUR K; KERDJA T; LOUHIBI D et al.1982; JOURNAL OF PHYSICS D: APPPLIED PHYSICS; ISSN 0022-3727; GBR; DA. 1982; VOL. 15; NO 9; PP. 1667-1672; BIBL. 8 REF.Article

MULTIPHONON RELAXATION RATE FROM PUMPED LEVEL TO UPPER LASER LEVEL IN YAG: NDKUSHIDA T; KINOSHITA S; OHTSUKI T et al.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 44; NO 9; PP. 1363-1365; BIBL. 9 REF.Article

GLASSES WITH A LARGE LASER EFFECT: ND-PHOSPHATE AND ND-FLUOROPHOSPHATEDEUTSCHBEIN O; FAULSTICH M; JAHN W et al.1978; APPL. OPT.; USA; DA. 1978; VOL. 17; NO 14; PP. 2228-2232; BIBL. 35 REF.Article

REFROIDISSEMENT DE L'ELEMENT ACTIF PLAT D'UN LASER A SOLIDESAMOJLOV MS; SEGEN VV.1978; IZVEST. VYSSH. UCHEBN. ZAVED., MASH.-STR.; S.S.S.R.; DA. 1978; NO 2; PP. 78-82; BIBL. 6 REF.Article

EXCITATION DES PAIRES D'IONS DANS LE RUBIS. NIVEAUX 4T2 4A2 DES PAIRES D'IONS.BEN GHORBAL M; DUVAL E.1976; J. PHYS.; FR.; DA. 1976; VOL. 37; NO 9; PP. 1073-1082; ABS. ANGL.; BIBL. 15 REF.Article

CONE-MIRROR RESONATOR Q-SWITCHED OPERATIONJUNEWEN CHEN.1982; APPLIED OPTICS; ISSN 0003-6935; USA; DA. 1982; VOL. 21; NO 23; PP. 4329-4330; BIBL. 4 REF.Article

EXPERIMENTAL DETERMINATION OF THE INCREMENTAL GAIN FOR A TRANSIT IN A NEODYMIUM LASERFESQUET J; IRLA H.1981; APPL. OPT.; ISSN 0003-6935; USA; DA. 1981; VOL. 20; NO 6; PP. 972-975; BIBL. 11 REF.Article

PERIODE INITIALE DE REFROIDISSEMENT DE L'ELEMENT PLAN ACTIF D'UN LASER A SOLIDESAMOJLOV MS.1978; IZVEST. VYSSH. UCHEBN. ZAVED., MASH.-STR.; SUN; DA. 1978; NO 11; PP. 76-81; BIBL. 8 REF.Article

STABILITE DE LA GENERATION PERIODIQUE DES LASERS A SOLIDE A CONTRE-REACTIONMURINA TA; ROZANOV NN.1981; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1981; VOL. 51; NO 1; PP. 91-96; BIBL. 6 REF.Article

LASER ACTION IN PRF3HEGARTY J; YEN WM.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 7; PP. 3545-3547; BIBL. 10 REF.Article

UNPOLARIZED EO Q-SWITCHED LASERRICHARDS J.1983; APPLIED OPTICS; ISSN 0003-6935; USA; DA. 1983; VOL. 22; NO 9; PP. 1306-1308; BIBL. 7 REF.Article

GLASS LASERS.JORGENSEN CK.1978; NATURWISSENSCHAFTEN; DTSCH.; DA. 1978; VOL. 65; NO 2; PP. 104-105; BIBL. 12 REF.Article

CARACTERISTIQUES STATISTIQUES DES DISPOSITIFS A LIAISON PAR PLASMAVEKSHINA EV; SKORIK VA; FURSIN GI et al.1977; MIKROELEKTRONIKA; S.S.S.R.; DA. 1977; VOL. 6; NO 6; PP. 542-548; BIBL. 18 REF.Article

DERIVATIVE MEASUREMENT BY FREQUENCY MIXING.PAOLI TL; SVACEK JF.1976; REV. SCI. INSTRUM.; U.S.A.; DA. 1976; VOL. 47; NO 9; PP. 1016-1019; BIBL. 10 REF.Article

X-BAND BIPOLAR TRANSISTORSAKAI T; IRIE T; UENO S et al.1978; N.E.C. RES. DEVELOP.; JPN; DA. 1978; NO 50; PP. 11-15; BIBL. 1 REF.Article

MICROWAVE SOLID-STATE SOURCE COMPONENTS MARKET.ANDERSON B.1976; MICROWAVE J.; U.S.A.; DA. 1976; VOL. 19; NO 10; PP. 24-29 (3P.)Article

SYNTHESE PARAMETRIQUE DES AMPLIFICATEURS SOLIDES ET DES GENERATEURS DE LA GAMME D'ONDES MILLIMETRIQUEKOTSERZHINSKIJ BA; PARFENOV AA; RADETSKIJ YU L et al.1980; IZV. VYSS. UCEBN. ZAVED., RADIOELEKTRON.; ISSN 0021-3470; SUN; DA. 1980; VOL. 23; NO 10; PP. 24-31; BIBL. 13 REF.Article

TO PICK THE RIGHT POWER SEMICONDUCTOR, UNDERSTAND DEVICE PROCESSING METHODSBAUGHER D; DENNING R.1979; ELECTRON. DESIGN; USA; DA. 1979; VOL. 27; NO 7; PP. 142-147Article

IMPROVEMENTS IN SCHOTTKY POWER DIODESWAGGIT RC.1978; ELECTRON. ENGNG; GBR; DA. 1978; VOL. 50; NO 610; PP. 42-43Article

POWER SEMICONDUCTORS-2. A SURVEY OF DEVICES, TECHNOLOGIES AND APPLICATIONS.SAGIN M.1977; WIRELESS WORLD; G.B.; DA. 1977; VOL. 83; NO 1496; PP. 83-92 (6P.)Article

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