RELATION-SHIP BETWEEN CARRIER MOBILITY AND ELECTRON CONCENTRATION IN SILICON HEAVILY DOPED WITH PHOSPHORUSMASETTI G; SOLMI S.1979; IEE J. SOLID-STATE ELECTRON. DEVICES; GBR; DA. 1979; VOL. 3; NO 3; PP. 65-68; BIBL. 18 REF.Article

OXIDATION-RATE DEPENDENCE OF PHOSPHORUS DIFFUSIVITY IN SILICON.MASETTI G; SOLMI S; SONCINI G et al.1976; PHILOS. MAG.; G.B.; DA. 1976; VOL. 33; NO 4; PP. 613-621; BIBL. 13 REF.Article

MULTI-SCAN ELECTRON BEAM SINTERING OF AL-SI OHMIC CONTACTSFINETTI M; SOLMI S; SONCINI G et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 6; PP. 539-543; BIBL. 8 REF.Article

OPTICAL AND ELECTRICAL CHARACTERIZATION OF HIGH-DOSE ION IMPLANTED, LASER-ANNEALED SILICON SOLAR CELLSOSTOJA P; SOLMI S; ZANI A et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 10; PP. 6208-6213; BIBL. 34 REF.Article

BORON REDISTRIBUTION AT THE OXIDE-SILICON INTERFACE DURING DRIVE-IN IN OXIDISING ATMOSPHERESMASETTI G; SOLMI S; SONCINI G et al.1973; ELECTRON. LETTERS; G.B.; DA. 1973; VOL. 9; NO 10; PP. 226-228; BIBL. 8 REF.Serial Issue

Electrical characterization of p⁺/n shallow junctions obtained by boron implantation into preamorphized siliconLANDI, E; SOLMI, S.Solid-state electronics. 1986, Vol 29, Num 11, pp 1181-1187, issn 0038-1101Article

ROLE OF A POLYSILICON LAYER IN THE REDUCTION OF LATTICE DEFECTS ASSOCIATED WITH PHOSPHORUS PREDEPOSITION IN SILICONARMIGLIATO A; SERUIDORI M; SOLMI S et al.1980; J. MATER. SCI.; ISSN 0022-2461; GBR; DA. 1980; VOL. 15; NO 5; PP. 1124-1130; BIBL. 17 REF.Article

IN THE GROWTH OF STACKING FAULTS AND DISLOCATIONS INDUCED IN SILICON BY PHOSPHORUS PREDEPOSITION.ARMIGLIATO A; SERVIDORI M; SOLMI S et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 5; PP. 1806-1812; BIBL. 23 REF.Article

IL METABOLISMO EPATICO DEI FARMACI NELLA PERSONA ANZIANA. = LE METABOLISME HEPATIQUE DES MEDICAMENTS CHEZ LE VIEILLARDCARULLI N; DI MAIRA PV; GASPARINI CASARI M et al.1977; G. GERONTOL.; ITAL.; DA. 1977; VOL. 25; NO 9; PP. 901-909; ABS. ANGL.; BIBL. 1 P. 1/2Article

Behavior of dopant diffusion in a silicon-on-insulator structure formed by high-dose oxygen implantationFAHEY, P; SOLMI, S.Journal of applied physics. 1986, Vol 60, Num 12, pp 4329-4332, issn 0021-8979Article

Effect of chlorine implantation on oxidation enhanced diffusion of phosphorus in siliconSOLMI, S; NEGRINI, P.Applied physics letters. 1984, Vol 45, Num 2, pp 157-159, issn 0003-6951Article

ELECTRICAL PROPERTIES AND STABILITY OF SUPERSATURATED PHOSPHORUS-DOPED SILICON LAYERSFINETTI M; NEGRINI P; SOLMI S et al.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 6; PP. 1313-1317; BIBL. 23 REF.Article

PREDEPOSITION THROUGH A POLYSILICON LAYER AS A TOOL TO REDUCE ANOMALIES IN PHOSPHORUS PROFILES AND THE PUSH-OUT EFFECT IN N-P-N TRANSISTORSFINETTI M; MASETTI G; NEGRINI P et al.1980; J.E.E. PROC., I; GBR; DA. 1980; VOL. 127; NO 1; PP. 37-41; BIBL. 26 REF.Article

ELECTRICAL PROPERTIES OF THERMALLY AND LASER ANNEALED POLYCRYSTALLINE SILICON FILMS HEAVILY DOPED WITH ARSENIC AND PHOSPHORUSSOLMI S; SEVERI M; ANGELUCCI R et al.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 8; PP. 1811-1818; BIBL. 38 REF.Article

CHARACTERIZATION OF THERMALLY DIFFUSED AND ION-IMPLANTED SEMICRYSTALLINE SILICON SOLAR CELLSFINETTI M; OSTOJA P; SOLMI S et al.1980; SOL. CELLS; CHE; DA. 1980; VOL. 2; NO 2; PP. 101-107; BIBL. 12 REF.Article

ALUMINIUM-SILICON OHMIC CONTACT ON SHALLOW N⁺/P JUNCTIONSFINETTI M; OSTOJA P; SOLMI S et al.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 3; PP. 255-262; BIBL. 21 REF.Article

PREDEPOSITION IN SILICON AS AFFECTED BY THE FORMATION OF ORTHORHOMBIC SIP AND CUBIC SIO₂, P₂O₅ AT THE PSG-SI INTERFACE.SOLMI S; CELOTTI G; NOBILI D et al.1976; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1976; VOL. 123; NO 5; PP. 654-660; BIBL. 20 REF.Article

Codiffusion of arsenic and phosphorus implanted in siliconSOLMI, S; MACCAGNANI, P; CANTERI, R et al.Journal of applied physics. 1993, Vol 74, Num 8, pp 5005-5012, issn 0021-8979Article

Enhanced diffusion phenomena during rapid thermal annealing of preamorphized boron-implanted silicon = Phaenomene erhoehter Diffusion waehrend schneller thermischer Ausheilung von voramorphisiertem borimplantierten SiliziumGUIMARAES, S; LANDI, E; SOLMI, S et al.Physica status solidi. A. Applied research. 1986, Vol 95, Num 2, pp 589-598, issn 0031-8965Article

Effect of the annealine conditions on the electrical characteristics of p⁺/n shallow junctionsSOLMI, S; LANDI, E; NEGRINI, P et al.IEEE electron device letters. 1984, Vol 5, Num 9, pp 359-361, issn 0741-3106Article

Experimental investigation and simulation of Sb diffusion in SiSOLMI, S; BARUFFALDI, F; DERDOUR, M et al.Journal of applied physics. 1992, Vol 71, Num 2, pp 697-703, issn 0021-8979Article

Diffusion of boron in silicon during post-implantation annealingSOLMI, S; BARUFFALDI, F; CANTERI, R et al.Journal of applied physics. 1991, Vol 69, Num 4, pp 2135-2142, issn 0021-8979, 8 p.Article

High-temperature equilibrium carrier density of arenic-doped siliconDERDOUR, M; NOBILI, D; SOLMI, S et al.Journal of the Electrochemical Society. 1991, Vol 138, Num 3, pp 857-860, issn 0013-4651, 4 p.Article

Precipitation and diffusivity of arsenic in siliconANGELUCCI, R; CELOTTI, G; NOBILI, D et al.Journal of the Electrochemical Society. 1985, Vol 132, Num 11, pp 2726-2730, issn 0013-4651Article

Deactivation kinetics in heavily arsenic-doped siliconNOBILI, D; SOLMI, S; MERLI, M et al.Journal of the Electrochemical Society. 1999, Vol 146, Num 11, pp 4246-4252, issn 0013-4651Article