Growth of strained InGaAs/GaAs by molecular beam epitaxy : a surface morphology, Raman spectroscopy and photoluminescence combined studySOON FATT YOON.Applied surface science. 1994, Vol 78, Num 1, pp 33-39, issn 0169-4332Article

Observation of degradation relaxation in 1.3 μm GaInAsP lader diodesSOON FATT YOON.Microelectronics and reliability. 1994, Vol 34, Num 4, pp 615-626, issn 0026-2714Article

Observation of nonbiased degradation recovery in GaInAsP/InP laser diodesSOON FATT YOON.Journal of lightwave technology. 1992, Vol 10, Num 2, pp 194-198, issn 0733-8724Article

Dry etching of thermal SiO₂ using SF₆-based plasma for VLSI fabricationSOON FATT YOON.Microelectronic engineering. 1991, Vol 14, Num 1, pp 23-40, issn 0167-9317, 18 p.Article

On factors influencing Si segregation and its effects on the two-dimensional electron gas mobility in inverted GaAs/n-AlGaAs heterostructuresSOON FATT YOON; RADHAKRISHNAN, K.Thin solid films. 1993, Vol 232, Num 1, pp 94-98, issn 0040-6090Article

Studies on single- and multi-layer InAsN quantum dots grown by solid source molecular beam epitaxySUN ZHONGZHE; SOON FATT YOON; YEW KUOK CHUIN et al.Journal of crystal growth. 2003, Vol 258, Num 1-2, pp 123-129, issn 0022-0248, 7 p.Article

Studies on single- and multi-layer InAsN quantum dots grown by solid-source molecular beam epitaxySUN ZHONGZHE; SOON FATT YOON; YEW KUOK CHUIN et al.Journal of crystal growth. 2003, Vol 259, Num 1-2, pp 40-46, issn 0022-0248, 7 p.Article

Carrier Relaxation and Modulation Response of 1.3-μm InAs-GaAs Quantum Dot LasersCUNZHU TONG; DAWEI XU; SOON FATT YOON et al.Journal of lightwave technology. 2009, Vol 27, Num 21-24, pp 5442-5450, issn 0733-8724, 9 p.Article

Thermal characterization of gallium arsenic nitride epilayer on gallium arsenide substrate using pulsed photothermal reflectance techniqueYIMIN ZHAO; CHEN, George; SHANZHONG WANG et al.Thin solid films. 2004, Vol 450, Num 2, pp 352-356, issn 0040-6090, 5 p.Article

Self-Consistent Analysis of Carrier Confinement and Output Power in 1.3-μm InAs-GaAs Quantum-Dot VCSELsXU, D. W; SOON FATT YOON; TONG, C. Z et al.IEEE journal of quantum electronics. 2008, Vol 44, Num 9-10, pp 879-885, issn 0018-9197, 7 p.Article

Surface morphology and quality of strained InGaAs grown by molecular-beam epitaxy on GaAsSOON FATT YOON.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 3, pp 562-566, issn 1071-1023Conference Paper

Microlithographic techniques in IC fabrication (Singapore, 25-26 June 1997)Soon-Fatt Yoon; Yu, Raymond; Mack, Chris A et al.SPIE proceedings series. 1997, isbn 0-8194-2610-5, VII, 264 p, isbn 0-8194-2610-5Conference Proceedings

Improved Performance of 1.3-μm Multilayer P-Doped InAs/InGaAs Quantum Dot Lasers Using Rapid Thermal AnnealingQI CAO; CUNZHU TONG; SOON FATT YOON et al.IEEE transactions on nanotechnology. 2012, Vol 11, Num 2, pp 231-235, issn 1536-125X, 5 p.Article

Anomalous temperature-dependent photoluminescence characteristic of as-grown GaInNAs/GaAs quantum well grown by solid source molecular beam epitaxyTIEN KHEE NG; SOON FATT YOON; WAN KHAI LOKE et al.Journal of crystal growth. 2004, Vol 270, Num 3-4, pp 351-358, issn 0022-0248, 8 p.Article

Analyzing the tolerance and controls on Critical Dimensions and overlays as prescribed by the National Technology Roadmap for semiconductorsRIZVI, S. A.SPIE proceedings series. 1997, pp 180-185, isbn 0-8194-2610-5Conference Paper

Relationship between ruling quality and lithographic gap in proximity photolithographyFU, Y.SPIE proceedings series. 1997, pp 104-109, isbn 0-8194-2610-5Conference Paper

Resolution and depth of focus in optical lithographyMACK, C. A.SPIE proceedings series. 1997, pp 14-27, isbn 0-8194-2610-5Conference Paper

UV embossed polymeric chip for protein separation and identification based on capillary isoelectric focusing and MALDI-TOF-MSXUN GUO; CHART-PARK, Mary B; SOON FATT YOON et al.Analytical chemistry (Washington, DC). 2006, Vol 78, Num 10, pp 3249-3256, issn 0003-2700, 8 p.Article

Effects of size and shape on electronic states of quantum dotsCHUN YONG NGO; SOON FATT YOON; WEIJUN FAN et al.Optical and quantum electronics. 2006, Vol 38, Num 12-14, pp 981-991, issn 0306-8919, 11 p.Conference Paper

Fabrication of 3-D Curved Microstructures by Constrained Gas Expansion and PhotopolymerizationCHAN-PARK, Mary B; CHUN YANG; XUN GUO et al.Langmuir. 2008, Vol 24, Num 10, pp 5492-5499, issn 0743-7463, 8 p.Article

Broadband microlithography : Process development using PROLITH simulatorBARASH, E. G; RANDHAWA, . S. S.SPIE proceedings series. 1997, pp 82-90, isbn 0-8194-2610-5Conference Paper

Direct-write electron beam lithography for submicron integrated circuit fabricationROSOLEN, G. C; KING, W. D.SPIE proceedings series. 1997, pp 148-153, isbn 0-8194-2610-5Conference Paper

Profile characteristics and simulation of chemically amplified resists in the electron beam lithographyHAM, Y.-M; LEE, C; KIM, S.-H et al.SPIE proceedings series. 1997, pp 154-160, isbn 0-8194-2610-5Conference Paper

Footing reduction in the organic bottom anti-reflective coating implementationKO, T.-M; CHENG, A.SPIE proceedings series. 1997, pp 196-206, isbn 0-8194-2610-5Conference Paper

Optimization of BARC for nonplanar lithography by three-dimensional electromagnetic simulationYEUNG, M. S; BAROUCH, E.SPIE proceedings series. 1997, pp 91-103, isbn 0-8194-2610-5Conference Paper