ON THE RELATIONSHIP BETWEEN CHARGE- AND CURRENT-BASED DLTSTHURZO I; LALINSKI T.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 71; NO 1; PP. K83-K87; BIBL. 7 REF.Article

STUDY OF GROWN-IN DEFECTS AND EFFECT OF THERMAL ANNEALING IN AL_0.3GA_0.7AS AND GAAS LPE LAYERSLI SS; LIN CY; BEDAIR SM et al.1982; JOURNAL OF ELECTRONIC MATERIALS; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 2; PP. 273-287; BIBL. 10 REF.Article

DEEP LEVEL SPECTROSCOPY AND SCHOTTKY BARRIER CHARACTERISTICS OF LPE N- AND P-INPNICKEL H; KUPHAL E.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 65; NO 2; PP. 583-588; ABS. GER; BIBL. 14 REF.Article

GOLD GETTERING IN SILICON BY PHOSPHOROUS DIFFUSION AND ARGON IMPLANTATION: MECHANISMS AND LIMITATIONSLECROSNIER D; PAUGAM J; PELOUS G et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 8; PP. 5090-5097; BIBL. 38 REF.Article

HYDROGEN PASSIVATION OF DEFECTS IN DEFORMED SILICONPOHORYLES B.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 57; NO 1; PP. K75-K80; BIBL. 8 REF.Article

ENERGY LEVELS OF SOME RARE-EARTH RELATED IMPURETIES IN GERMANIUMPEARTON SJ.1982; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1982; VOL. 109; NO 2; PP. K135-K138; BIBL. 8 REF.Article

ANALYSIS OF AND SOME DESING CONSIDERATIONS FOR THE CONSTANT CAPACITANCE DLTS SYSTEMLAU WS; LAM YW.1982; INT. J. ELECTRON. THEOR. EXP.; ISSN 0020-7217; GBR; DA. 1982; VOL. 52; NO 4; PP. 369-379; BIBL. 9 REF.Article

TEMPERATURE DEPENDENCE OF PEAK HEIGHTS IN DEEP-LEVEL TRANSIENT SPECTROSCOPYROCKETT PI; PEAKER AR.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 22; PP. 838-839; BIBL. 3 REF.Article

X-Y PLOTTER CAPACITANCE METER INTERFACE FOR DEEP LEVEL SPECTROSCOPYBALLAND B; MARCHAND JJ; BRIOT R et al.1981; J. PHYS. E; ISSN 0022-3735; GBR; DA. 1981; VOL. 14; NO 3; PP. 367-372; BIBL. 14 REF.Article

CHANGE OF INTERFACE STATE SPECTRUM IN AL/SIO₂/SI STRUCTURES WITH BIASING DURING ELECTRON IRRADIATIONROSENCHER E; BOIS D.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 7; PP. 601-603; BIBL. 17 REF.Article

THE ELECTRICAL PROPERTIES OF SULPHUR IN SILICONBROTHERTON SD; KING MJ; PARKER GJ et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 7; PP. 4649-4658; BIBL. 28 REF.Article

FIELD DRIFT AND HYDROGENATION OF DEEP LEVEL DEFECTS ASSOCIATED WITH 1-MEV ION-IMPLANTED OXYGEN IN GERMANIUM DIODESTAVENDALE AJ; PEARTON SJ.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 6; PP. 3213-3215; BIBL. 36 REF.Article

ABSOLUTE ENERGY OF THE NITROGEN-RELATED ELECTRON TRAP IN GALLIUM PHOSPHIDEZDANSKY K; KRATENA L; MATYAS M JR et al.1983; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1983; VOL. 75; NO 1; PP. 335-339; ABS. RUS; BIBL. 15 REF.Article

HYDROGEN-INDUCED DLTS SIGNAL IN PD/N-SI SCHOTTKY DIODESPETTY MC.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 8; PP. 314-316; BIBL. 9 REF.Article

INFLUENCE OF THE SURFACE ON THE STABILITY OF RADIATION DEFECTS INTRODUCED BY ELECTRON IRRADIATIONNIDAEV EV; POPOV AI.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 72; NO 2; PP. K193-K195; BIBL. 5 REF.Article

DEEP IMPURITY LEVELS IN INP LEC CRYSTALSYAMAZOE Y; SASAI Y; NISHINO T et al.1981; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; NO 2; PP. 347-354; BIBL. 21 REF.Article

DEEP LEVEL STUDIES OF HG_1-XCD_XTE. II: CORRELATION WITH PHOTODIODE PERFORMANCEPOLLA DL; REINE MB; JONES CE et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 8; PP. 5132-5138; BIBL. 15 REF.Article

EIGENSCHAFTEN DER ENERGIENIVEAUS VON VERSETZUNGEN IN SILIZIUM = ETUDE DES ENERGIES DE NIVEAU DES DISLOCATIONS DANS LE SILICIUMLEMKE H.1981; PHYS. STATUS SOLIDI(A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 65; NO 1; PP. 389-401; ABS. ENG; BIBL. 22 REF.Article

DEEP LEVEL TRANSIENT SPECTROSCOPY OF INTERFACE AND BULK TRAP STATES IN INP METAL/OXIDE/SEMICONDUCTOR STRUCTURESINUISHI M; WESSELS BW.1983; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1983; VOL. 103; NO 1-2; PP. 141-153; BIBL. 18 REF.Article

IONENPAARE ZWISCHEN CHROM UND FLACHEN AKZEPTOREN IN SILIZIUM = PAIRES IONIQUES ENTRE CHROME ET DES ACCEPTEURS DE SURFACE DANS LE SILICIUMLEMKE H.1983; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1983; VOL. 75; NO 1; PP. K49-K51; BIBL. 4 REF.Article

A CORRECTED FORMULA FOR TRANSIENT CHARGING OF AN INSULATOR IN DLTS EXPERIMENTSTHURZO I.1983; JOURNAL OF PHYSICS D: APPPLIED PHYSICS; ISSN 0022-3727; GBR; DA. 1983; VOL. 16; NO 2; PP. L37-L38; BIBL. 1 REF.Article

DEEP LEVEL TRANSIENT SPECTROSCOPY USING CAMAC COMPONENTSJERVIS TR; TETER WM; COLE T et al.1982; REV. SCI. INSTRUM.; ISSN 0034-6748; USA; DA. 1982; VOL. 53; NO 8; PP. 1160-1162; BIBL. 6 REF.Article

INTERVALLE DE CONFIANCE DE LA SIGNATURE OBTENUE PAR D.L.T.S., D'UN PIEGE PROFOND = CONFIDENCE INTERVAL OF ACTIVATION ENERGY OF A DEEP LEVEL BY D.L.T.S.SAGNES G; BASTIDE G; LIM H et al.1982; REVUE DE PHYSIQUE APPLIQUEE; ISSN 0035-1687; FRA; DA. 1982; VOL. 17; NO 12; PP. 787-792; ABS. ENG; BIBL. 6 REF.Article

DEEP ELECTRON TRAPS IN HYDROGENATED AMORPHOUS SILICONCRANDALL RS.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 12; PP. 7457-7459; BIBL. 15 REF.Article

IRON-RELATED DEEP LEVELS IN SILICONWUNSTEL K; WAGNER P.1981; SOLID STATES COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 40; NO 8; PP. 797-799; BIBL. 15 REF.Article