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RESOLUTION OF SPREADING-RESISTANCE MEASUREMENTS ON SHALLOW LAYERSABBASI SA; BRUNNSCHWEILER A.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 10; PP. 290-292; BIBL. 4 REF.Article

SPREADING RESISTANCE CALCULATIONS FOR GRADED STRUCTURES BASED ON THE UNIFORM FLUX SOURCE BOUNDARY CONDITION.LEONG MS; CHOO SC; WANG CC et al.1977; SOLID STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 3; PP. 255-264; BIBL. 13 REF.Article

MESURE DE LA RESISTANCE DIFFUSE DU COLLECTEUR DU TRANSISTOR BIPOLAIREPIETRENKO W; WILAMOWSKI BM.1976; ROZPR. ELEKTROTECH.; POLSKA; DA. 1976; VOL. 22; NO 4; PP. 803-812; ABS. ANGL. FR. ALLEM. RUSSE; BIBL. 8 REF.Article

SIMPLE S-PARAMETER MEASUREMENT OF BASE SPREADING RESISTANCEUNWIN RT; KNOTT KF.1980; MICROELECTRONICS; ISSN 0026-2692; GBR; DA. 1980; VOL. 11; NO 6; PP. 18-20; BIBL. 4 REF.Article

A MULTILAYER CORRECTION SCHEME FOR SPREADING RESISTANCE MEASUREMENTS.CHOO SC; LEONG MS; HONG HL et al.1977; SOLID STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 10; PP. 839-848; BIBL. 10 REF.Article

IMPURITY PROFILES WITHIN A SHALLOW P-N JUNCTION BY A NEW DIFFERENTIAL SPREADING RESISTANCE METHOD.KUDOH O; UDA K; IKUSHIMA Y et al.1976; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1976; VOL. 123; NO 11; PP. 1751-1754; BIBL. 16 REF.Article

COMPARISON OF METHODS USED FOR DETERMINING BASE SPREADING RESISTANCEUNWIN RT; KNOTT KF.1980; I.E.E. PROC., I; GBR; DA. 1980; VOL. 127; NO 2; PP. 53-61; BIBL. 32 REF.Article

REPROCESSING OF DATA FROM SPREADING-RESISTANCE MEASUREMENTSVAN LINSCHOTEN J; SNIJDER J; HILLEN MW et al.1980; I.E.E. PROC., I; GBR; DA. 1980; VOL. 127; NO 2; PP. 100-103; BIBL. 5 REF.Article

HIGH SPEED IMPLEMENTATION AND EXPERIMENTAL EVALUATION OF MULTILAYER SPREADING RESISTANCE ANALYSISD'AVANZO DA; RUNG RD; GAT A et al.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 7; PP. 1170-1176; BIBL. 20 REF.Article

THE ROLE OF SOURCE BOUNDARY CONDITION IN SPREADING RESISTANCE CALCULATIONSLEONG MS; CHOO SC; TAN LS et al.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 7; PP. 933-941; BIBL. 7 REF.Article

DEPENDANCE DE LA RESISTANCE ELECTRIQUE D'ETALEMENT A L'EGARD DE LA CHARGE APPLIQUEE A LA SONDE DE MESUREMALYSHEV VA; GUSAKOV NI; SIL'VANSKAYA OV et al.1976; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1976; NO 5; PP. 271; BIBL. 3 REF.Article

COMPARISON OF SPREADING RESISTANCE CORRECTION FACTOR ALGORITHMS USING MODEL DATAALBERS J.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 12; PP. 1197-1205; BIBL. 16 REF.Article

CORRECTION OF SPREADING RESISTANCE DATA OBTAINED FROM BEVELLED SHALLOW JUNCTIONSABBASI SA; BRUNNSCHWEILER A.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 13; PP. 507-508; BIBL. 5 REF.Article

SPREADING RESISTANCE CALCULATIONS BY THE USE OF GAUSS-LAGUERRE QUADRATURECHOO SC; LEONG MS; HONG HL et al.1978; SOLID-STATE ELECTRON; GBR; DA. 1978; VOL. 21; NO 5; PP. 769-774; BIBL. 6 REF.Article

Spreading thermal resistance of the heat-sink of a light-emitting diodeNAKWASKI, W.Solid-state electronics. 1984, Vol 27, Num 8-9, pp 823-824, issn 0038-1101Article

The relation between the correction factor and the local slope in spreading resistanceALBERS, J.Journal of the Electrochemical Society. 1983, Vol 130, Num 10, pp 2076-2080, issn 0013-4651Article

A NEW SURFACE PREPARATION AND BEVELLING TECHNIQUE FOR SPREADING RESISTANCE MEASUREMENTS ON N- AND P-TYPE SILICON.UNTER TF; LAMB DR.1975; MICROELECTRONICS; G.B.; DA. 1975; VOL. 6; NO 4; PP. 17-20; BIBL. 5 REF.Article

THE SPREADING RESISTANCE OF AN INHOMOGENEOUS SLAB WITH A DISC ELECTRODE AS A MIXED BOUNDARY VALUE PROBLEMLEONG MS; CHOO SC; TAN LS et al.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 6; PP. 527-531; BIBL. 11 REF.Article

EFFECTS OF THE DIFFUSED IMPURITY PROFILE ON THE DC CHARACTERISTICS OF VMOS AND DMOS DEVICES.D'AVANZO DC; COMBS SR; DUTTON RW et al.1977; I.E.E.E.J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1977; VOL. 12; NO 4; PP. 356-362; BIBL. 10 REF.Article

APPLICATION DE LA METHODE DE RESISTANCE D'ETALEMENT, AU CONTROLE DE LA RESISTIVITE ET DE L'EPAISSEUR DES COUCHES EPITAXIQUES DANS LES MATERIAUX SEMICONDUCTEURSMALYSHEV VA.1979; PRIBORY TEKH. EKSPER.; SUN; DA. 1979; NO 1; PP. 218-220; BIBL. 5 REF.Article

Incorporation of a resistivity-dependent contact radius in an accurate integration algorithm for spreading resistance calculationsPIESSENS, R; VANDERVORST, W. B; MAES, H. E et al.Journal of the Electrochemical Society. 1983, Vol 130, Num 2, pp 468-474, issn 0013-4651Article

EFFECT OF ULTRASONIC VIBRATIONS ON INSB PULLED CRYSTALSHAYAKAWA Y; SONE Y; TATSUMI K et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 9; PART. 1; PP. 1273-1277; BIBL. 10 REF.Article

SPREADING RESISTANCE ANALYSIS FOR SILICON LAYERS WITH NONUNIFORM RESISTIVITYDICKEY DH; EHRSTEIN JR.1979; NATION. BUR. STAND., SPEC. PUBL.; USA; DA. 1979; NO 400-48; 65 P.; BIBL. 12 REF.Serial Issue

The relation between two-probe and four-probe resistances on nonuniform structuresALBERS, J; BERKOWITZ, H. L.Journal of the Electrochemical Society. 1984, Vol 131, Num 2, pp 392-398, issn 0013-4651Article

Determination of phosphorus contamination during antimony implantation by measurement and simulationKURUC, M; HULENYI, L; KINDER, R et al.Applied surface science. 2006, Vol 252, Num 12, pp 4353-4357, issn 0169-4332, 5 p.Article

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