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REACTIVE SPUTTER ETCHING AND ITS APPLICATIONSWANG DNK; MAYDAN D; LEVINSTEIN HJ et al.1980; SOLID STATE TECHNOL.; ISSN 0038-111X; USA; DA. 1980; VOL. 23; NO 8; PP. 122-126; BIBL. 9 REF.Article

1-MU M MOS PROCESS USING ANISOTROPIC DRY ETCHINGENDO N; KUROGI Y.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 411-416; BIBL. 20 REF.Article

CF4 ETCHING IN A DIODE SYSTEMBONDUR JA.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 2; PP. 226-231; BIBL. 17 REF.Article

REACTIVE SPUTTER ETCHING OF SILICON WITH VERY LOW MASK-MATERIAL ETCH RATESHORWITZ CM.1981; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 11; PP. 1320-1323; BIBL. 10 REF.Article

FABRICATION PROCESS FOR JOSEPHSON INTEGRATED CIRCUITSGREINER JH; KIRCHER CJ; KLEPNER SP et al.1980; I.B.M. J. RES. DEVELOP.; USA; DA. 1980; VOL. 24; NO 2; PP. 195-205; BIBL. 39 REF.Article

A NEW VACUUM-ETCHED HIGH-TRANSMITTANCE (ANTIREFLECTION) FILMHORWITZ CM.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 9; PP. 727-730; BIBL. 16 REF.Article

ION-BOMBARDMENT-INDUCED IMPROVEMENT OF PHOTORESIST. MASK PROPERTIES FOR RF SPUTTER-ETCHING.IIDA Y; OKABAYASHI H; SUZUKI K et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; NO 8; PP. 1313-1318; BIBL. 12 REF.Article

DEVELOPMENT OF SILVER SENSITIZED GERMANIUM SELENIDE PHOTORESIST BY REACTIVE SPUTTER ETCHING IN SF6HUGGETT PG; FRICK K; LEHMANN HW et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 7; PP. 592-594; BIBL. 10 REF.Article

REACTIVE ION ETCHING OF SILICON OXIDES WITH AMMONIA AND TRIFLUOROMETHANE. THE ROLE OF NITROGEN IN THE DISCHARGESMOLINSKY G; TRUESDALE EA; WANG DNK et al.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 5; PP. 1036-1040; BIBL. 12 REF.Article

REACTIVE SPUTTER ETCHING OF THIN FILMS FOR PATTERN DELINEATIONCASTELLANO RN.1978; I.E.E.E. TRANS. COMPON. HYBR. MANUFG TECHNOL.; USA; DA. 1978; VOL. 1; NO 4; PP. 397-399; BIBL. 7 REF.Article

SOME INVESTIGATIONS ON DEPOSITION AND ETCHING PROFILES IN MASKED RF SPUTTERING.SOPORI BL; CHANG WSC.1977; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1977; VOL. 14; NO 3; PP. 782-785; BIBL. 15 REF.Article

REACTIVE SPUTTER ETCHING CHARACTERISTICS OF SI WAFERMIYAKE S; KASAI T.1979; BULL. JAP. SOC. PRECIS. ENGNG; JPN; DA. 1979; VOL. 13; NO 2; PP. 103-104; BIBL. 2 REF.Article

Langmuir probe measurements on CHF3 and CF4 plasmas: the role of ions in the reactive sputter etching of SiO2 and SiSTEINBRUCHEL, C.Journal of the Electrochemical Society. 1983, Vol 130, Num 3, pp 648-655, issn 0013-4651Article

Superhydrophobicity produced by vapor deposition of a hydrophobic layer onto fine protrusions formed by sputter-etching of steelsNAKASA, Keijiro; RONGGUANG WANG; YAMAMOTO, Akihiro et al.Surface & coatings technology. 2012, Vol 210, pp 113-121, issn 0257-8972, 9 p.Article

ANNEALING OF AR SPUTTER-ETCH-DAMAGED SI BY A Q-SWITCHED RUBY LASERLAWSON EM; SCOTT MD; ROSE A et al.1983; JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY. B: MICROELECTRONICS PROCESSING AND PHENOMENA; ISSN 512982; USA; DA. 1983; VOL. 1; NO 1; PP. 35-36; BIBL. 8 REF.Article

DEPTH RESOLUTION AND SURFACE ROUGHNESS EFFECTS IN SPUTTER PROFILING OF NICR MULTILAYER SANDWICH SAMPLES USING AUGER ELECTRON SPECTROSCOPY.HOFMANN S; ERLEWEIN J; ZALAR A et al.1977; THIN SOLID FILMS; NETHERL.; DA. 1977; VOL. 43; NO 3; PP. 275-283; BIBL. 21 REF.Article

AN ANALYTICAL TREATMENT ON THE PATTERN FORMATION PROCESS BY SPUTTER ETCHING WITH A MASK.MATSUO S.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; NO 7; PP. 1253-1262; BIBL. 14 REF.Article

IMPROVEMENT OF ADHESION, LINE DEFINITION, CONTACT RESISTANCE AND SEMICONDUCTOR PROPERTIES BY SPUTTER-ETCHINGKALLFASS T.1979; ELECTROCOMPON. SCI. TECHNOL.; GBR; DA. 1979; VOL. 5; NO 4; PP. 215-218; BIBL. 11 REF.Article

DRY PROCESSING OF HIGH RESOLUTION AND HIGH ASPECT RATIO STRUCTURES IN GAAS-ALXGA1-XAS FOR INTEGRATED OPTICS.SOMEKH S; CASEY HC JR.1977; APPL. OPT.; U.S.A.; DA. 1977; VOL. 16; NO 1; PP. 126-136; BIBL. 51 REF.Article

FORMING OHMIC CONTACTS IN CDSE THIN-FILM TRANSISTORS BY DC SPUTTER ETCHINGLUO FC; FREEMAN EC; SLOWIK JH et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 6; PP. 552-554; BIBL. 6 REF.Article

STRUCTURAL AND ELECTRICAL CHARACTERISTICS OF PLATINUM-SILICIDE-SILICON CONTACTS AS INFLUENCED BY SPACTTER ETCHING AND ANNEALING AMBIENT.SEVERI M; GABILLI E; GUERRI S et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 5; PP. 1998-2003; BIBL. 24 REF.Article

METALLIZATION ADHESION LAYER FORMED BY BACKSCATTERING DURING DC SPUTTER ETCHING.KOMINIAK GJ.1976; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1976; VOL. 13; NO 5; PP. 1100; BIBL. 10 REF.Article

New dry etch for Al and Al-Cu-Si alloy: reactively masked sputter etching with SiF4HORWITZ, C. M.Applied physics letters. 1983, Vol 42, Num 10, pp 898-900, issn 0003-6951Article

ADVANCED LITHOGRAPHY AND PROCESS1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; SUPPL. 19-1; PP. 33-74; BIBL. DISSEM.Conference Paper

AN INVESTIGATION OF THE PROPERTIES OF AN EPITAXIAL SI LAYER ON A SUBSTRATE WITH A BURIED SIO2 LAYER FORMED BY OXYGEN-ION IMPLANTATIONHOMMA Y; OSHIMA M; HAYASHI T et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 6; PART. 1; PP. 890-895; BIBL. 13 REF.Article

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