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kw.\*:("STACKING FAULT")

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OXIDATION INDUCED STACKING FAULTS IN N- AND P-TYPE (100) SILICON.MURARKA SP; QUINTANA G.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 1; PP. 46-51; BIBL. 50 REF.Article

EINE ERWEITERUNG DES VERFAHRENS DER ROENTGENOGRAPHISCHEN LINIENBREITEANALYSE ZUR ERMITTLUNG DER STAPELFEHLERDICHTE. = EXTENSION DU PROCEDE D'ANALYSE RADIOGRAPHIQUE DE LA LARGEUR DES RAIES POUR DETERMINER LA DENSITE DES DEFAUTS D'EMPILEMENTLOWE P.1977; WISSENSCH. Z. HOCHSCH. VERK.-WES. "FRIEDRICH LIST" DRESDEN; DTSCH.; DA. 1977; VOL. 24; NO 4; PP. 741-747; BIBL. 6 REF.Article

FURTHER COMMENTS ON THE APPROPRIATENESS OF STACKING FAULT ENERGY TO MECHANICAL PROPERTY CORRELATIONS = NOUVEAUX COMMENTAIRES SUR LA POSSIBILITE D'APPLIQUER L'ENERGIE DE DEFAUT D'EMPILEMENT AUX CORRELATIONS DES PROPRIETES MECANIQUESKING AH.1982; SCR. METALL.; ISSN 0036-9748; USA; DA. 1982; VOL. 16; NO 10; PP. 1181-1182; BIBL. 2 REF.Article

THE VALIDITY OF THE COLUMN APPROXIMATION IN IMAGE CONTRAST CALCULATIONS OF CRYSTALS CONTAINING STACKING FAULTSJAP BK; SHEININ SS.1981; PHYS. STATUS SOLIDI, SECT. B, BASIC RES.; DDR; DA. 1981-05-01; VOL. 105; NO 1; PP. 137-145; BIBL. 9 REF.Article

MECANISMES DE FORMATION D'UNE NOUVELLE PHASE SUR LES DEFAUTS D'EMPILEMENT. TYPES CINETIQUES DE LEUR ACTIONSOLOV'EV VA.1976; FIZ. METALLOV METALLOVED.; S.S.S.R.; DA. 1976; VOL. 41; NO 5; PP. 942-950; BIBL. 43 REF.Article

A NEW POLYTYPE NOTATION FOR CDI2 TYPE STRUCTURES: THE THR SYMBOLSFICHTNER K.1983; CRYSTAL RESEARCH AND TECHNOLOGY (1979); ISSN 0232-1300; DDR; DA. 1983; VOL. 18; NO 1; PP. 77-84; ABS. GER; BIBL. 12 REF.Article

WEAK-BEAM CONTRAST FROM STACKING FAULTS IN SILICONSALISBURY IG.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 74; NO 1; PP. 353-359; ABS. GER; BIBL. 13 REF.Article

RESIDUAL STACKING-FAULT-TYPE CONTRAST IN SILICON AFTER APPARENT UNFAULTING REACTIONSTAN TY.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 10; PP. 714-716; BIBL. 11 REF.Article

ELIMINATION OF STACKING FAULTS IN SILICON BY TRICHLOROETHYLENE OXIDATION.HATTORI T.1976; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1976; VOL. 123; NO 6; PP. 945-946; BIBL. 25 REF.Article

DIRECT MEASUREMENT OF THE MELT DEPTH OF SILICON DURING LASER IRRADIATIONHAYA FUJI Y; AOKI Y; USUI S et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 8; PP. 720-722; BIBL. 18 REF.Article

AN INTERATOMIC PAIR POTENTIAL FOR ALUMINIUM: CALCULATION OF STACKING FAULT ENERGYRAUTIOAHO RH.1982; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1982; VOL. 112; NO 1; PP. 83-89; ABS. GER; BIBL. 15 REF.Article

X-RAY DIFFRACTION FROM NH(N/2 N/2) STRUCTURES CONTAINING STACKING FAULTSMICHALSKI E; KACZMAREK S; DEMIANIUK M et al.1981; ACTA PHYS. POL., A; ISSN 0587-4246; POL; DA. 1981; VOL. 59; NO 6; PP. 715-721; BIBL. 15 REF.Article

ABSORPTION COEFFICIENTS IN THE DYNAMICAL THEORY OF ELECTRON DIFFRACTION FOR NON-COLUMN CALCULATIONS OF STACKING FAULT CONTRASTSHEININ SS.1981; PHYS. STATUS SOLIDI, SECT. B, BASIC RES.; DDR; DA. 1981-05-01; VOL. 105; NO 1; PP. 327-332; BIBL. 4 REF.Article

LIMITING FACTORS IN SPECIMEN THICKNESS IN CONVENTIONAL AND SCANNING TRANSMISSION ELECTRON MICROSCOPY.FRASER HL; JONES IP; LORETTO MH et al.1977; PHILOS. MAG.; G.B.; DA. 1977; VOL. 35; NO 1; PP. 159-176; BIBL. 1 P.Article

SHRINKAGE EFFECT OF STACKING FAULTS DURING HCL OXIDATION IN STEAM.SHIBAYAMA H; MASAKI H; ISHIKAWA H et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 3; PP. 136-138; BIBL. 9 REF.Article

CRYSTAL POTENTIAL NEAR A STACKING FAULTHERREMANS W; DAVID M; GEVERS R et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 70; NO 1; PP. 295-309; ABS. GER; BIBL. 10 REF.Article

THE CORE STRUCTURE OF EXTRINSIC STACKING FAULTS IN SILICON.KRIVANEK GL; MAHER DM.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 8; PP. 451-453; BIBL. 23 REF.Article

A SEMICLASSICAL ANALYSIS OF HIGH ENERGY ELECTRON DIFFRACTION BY STACKING FAULTS: ARRIVAL AT THE CLASSICAL LIMITSMITH AE; CHADDERTON LT; JOHNSON E et al.1978; RAD. EFFECTS; GBR; DA. 1978; VOL. 39; NO 3-4; PP. 243-245; BIBL. 9 REF.Article

ON THE CONTRAST ASYMMETRY EXHIBITED BY INTRINSIC AND EXTRINSIC FAULTS IMAGED UNDER WEAK-BEAM CONDITIONSBOTROS KZ; PEREZ R; SHEININ SS et al.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; DDR; DA. 1981-12; VOL. 68; NO 2; PP. 351-356; BIBL. 12 REF.Article

GERMINATION QUANTIQUE ET PAR FLUCTUATIONS THERMIQUES D'UNE NOUVELLE PHASE DANS LES CRISTAUX (MECANISME D'ARRANGEMENT EN COUCHES DES DEFAUTS D'EMPILEMENT)POZDNYAKOV VA; SOLOV'EV VA.1980; DOKL. AKAD. NAUK SSSR; ISSN 0002-3264; SUN; DA. 1980; VOL. 252; NO 2; PP. 339-343; BIBL. 10 REF.Article

DIFFRACTION DES RAYONS X PAR DES CRISTAUX AVEC DEFAUTS D'EMPILEMENTMIRZAEV DA; RUSHCHITS SV.1976; KRISTALLOGRAFIJA; S.S.S.R.; DA. 1976; VOL. 21; NO 4; PP. 670-677; BIBL. 15 REF.Article

ON THE PLASTIC BEHAVIOUR OF CONCENTRATED CU-MN SINGLE CRYSTALS = COMPORTEMENT PLASTIQUE DES MONOCRISTAUX CU-MN A BASE DE CUWILLE T; SCHWINK C.1980; SCR. METALL.; ISSN 0036-9748; USA; DA. 1980; VOL. 14; NO 8; PP. 923-928; BIBL. 39 REF.Article

GETTERING OF STACKING-FAULT NUCLEI IN SILICON BY TRICHLOROETHYLENE OXIDATION.HATTORI T.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 7; PP. 312-314; BIBL. 18 REF.Article

INFLUENCE OF INTERCALATION-DESORPTION ON THE MUTUAL ARRANGEMENT OF THE ELEMENTARY SHEETS IN A PARTIALLY GRAPHITIZED CARBON.CRESPIN M; TCHOUBAR D; GATINEAU L et al.1977; CARBON; G.B.; DA. 1977; VOL. 15; NO 5; PP. 303-306; BIBL. 14 REF.Article

X-ray diffraction line profile analysis for defect study in Cu-1 wt.% Cr-0.1 wt.% Zr alloyKAPOOR, K; LAHIRI, D; BATRA, I. S et al.Materials characterization. 2005, Vol 54, Num 2, pp 131-140, issn 1044-5803, 10 p.Article

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