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kw.\*:("STACKING FAULT")

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EINE ERWEITERUNG DES VERFAHRENS DER ROENTGENOGRAPHISCHEN LINIENBREITEANALYSE ZUR ERMITTLUNG DER STAPELFEHLERDICHTE. = EXTENSION DU PROCEDE D'ANALYSE RADIOGRAPHIQUE DE LA LARGEUR DES RAIES POUR DETERMINER LA DENSITE DES DEFAUTS D'EMPILEMENTLOWE P.1977; WISSENSCH. Z. HOCHSCH. VERK.-WES. "FRIEDRICH LIST" DRESDEN; DTSCH.; DA. 1977; VOL. 24; NO 4; PP. 741-747; BIBL. 6 REF.Article

FURTHER COMMENTS ON THE APPROPRIATENESS OF STACKING FAULT ENERGY TO MECHANICAL PROPERTY CORRELATIONS = NOUVEAUX COMMENTAIRES SUR LA POSSIBILITE D'APPLIQUER L'ENERGIE DE DEFAUT D'EMPILEMENT AUX CORRELATIONS DES PROPRIETES MECANIQUESKING AH.1982; SCR. METALL.; ISSN 0036-9748; USA; DA. 1982; VOL. 16; NO 10; PP. 1181-1182; BIBL. 2 REF.Article

A NEW POLYTYPE NOTATION FOR CDI2 TYPE STRUCTURES: THE THR SYMBOLSFICHTNER K.1983; CRYSTAL RESEARCH AND TECHNOLOGY (1979); ISSN 0232-1300; DDR; DA. 1983; VOL. 18; NO 1; PP. 77-84; ABS. GER; BIBL. 12 REF.Article

WEAK-BEAM CONTRAST FROM STACKING FAULTS IN SILICONSALISBURY IG.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 74; NO 1; PP. 353-359; ABS. GER; BIBL. 13 REF.Article

LIMITING FACTORS IN SPECIMEN THICKNESS IN CONVENTIONAL AND SCANNING TRANSMISSION ELECTRON MICROSCOPY.FRASER HL; JONES IP; LORETTO MH et al.1977; PHILOS. MAG.; G.B.; DA. 1977; VOL. 35; NO 1; PP. 159-176; BIBL. 1 P.Article

SHRINKAGE EFFECT OF STACKING FAULTS DURING HCL OXIDATION IN STEAM.SHIBAYAMA H; MASAKI H; ISHIKAWA H et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 3; PP. 136-138; BIBL. 9 REF.Article

CRYSTAL POTENTIAL NEAR A STACKING FAULTHERREMANS W; DAVID M; GEVERS R et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 70; NO 1; PP. 295-309; ABS. GER; BIBL. 10 REF.Article

THE CORE STRUCTURE OF EXTRINSIC STACKING FAULTS IN SILICON.KRIVANEK GL; MAHER DM.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 8; PP. 451-453; BIBL. 23 REF.Article

A SEMICLASSICAL ANALYSIS OF HIGH ENERGY ELECTRON DIFFRACTION BY STACKING FAULTS: ARRIVAL AT THE CLASSICAL LIMITSMITH AE; CHADDERTON LT; JOHNSON E et al.1978; RAD. EFFECTS; GBR; DA. 1978; VOL. 39; NO 3-4; PP. 243-245; BIBL. 9 REF.Article

ON THE CONTRAST ASYMMETRY EXHIBITED BY INTRINSIC AND EXTRINSIC FAULTS IMAGED UNDER WEAK-BEAM CONDITIONSBOTROS KZ; PEREZ R; SHEININ SS et al.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; DDR; DA. 1981-12; VOL. 68; NO 2; PP. 351-356; BIBL. 12 REF.Article

GERMINATION QUANTIQUE ET PAR FLUCTUATIONS THERMIQUES D'UNE NOUVELLE PHASE DANS LES CRISTAUX (MECANISME D'ARRANGEMENT EN COUCHES DES DEFAUTS D'EMPILEMENT)POZDNYAKOV VA; SOLOV'EV VA.1980; DOKL. AKAD. NAUK SSSR; ISSN 0002-3264; SUN; DA. 1980; VOL. 252; NO 2; PP. 339-343; BIBL. 10 REF.Article

DIFFRACTION DES RAYONS X PAR DES CRISTAUX AVEC DEFAUTS D'EMPILEMENTMIRZAEV DA; RUSHCHITS SV.1976; KRISTALLOGRAFIJA; S.S.S.R.; DA. 1976; VOL. 21; NO 4; PP. 670-677; BIBL. 15 REF.Article

X-ray diffraction line profile analysis for defect study in Cu-1 wt.% Cr-0.1 wt.% Zr alloyKAPOOR, K; LAHIRI, D; BATRA, I. S et al.Materials characterization. 2005, Vol 54, Num 2, pp 131-140, issn 1044-5803, 10 p.Article

DYNAMIC STUDY OF STOCKING FAULT TETRAHEDRA INDUCED BY ELECTRON IRRADIATION IN COPPER CRYSTALS = ETUDE DYNAMIQUE DES TETRAEDRES DE DEFAUTS D'EMPILEMENT INDUITS PAR IRRADIATION AVEC DES ELECTRONS DE CRISTAUX DE CUIVREFUJITA H; SAKATA T; FUKUYO H et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 4; PP. L235-L236; BIBL. 8 REF.Article

STACKING FAULT TETRAHEDRA AND DIHEDRA IN AUSTENITIC STAINLESS STEELS.ARTIGUE F; CONDAT M; FAYARD M et al.1977; SCRIPTA METALLURG.; E.U.; DA. 1977; VOL. 11; NO 7; PP. 623-626; BIBL. 9 REF.Article

INFLUENCE DE L'AZOTE SUR LA CONCENTRATION DES DEFAUTS D'EMPILEMENT DANS L'AUSTENITE CR-MNBANOV RM; ZLATEVA GZ.1977; IZVEST. AKAD. NAUK S.S.S.R., METALLY; S.S.S.R.; DA. 1977; NO 2; PP. 172-176; BIBL. 6 REF.Article

GROWTH OF STACKING FAULT TETRAHEDRA IN THIN FOIL PREPARED FROM QUENCHED PURE GOLD = CROISSANCE DE TETRAEDRES DE DEFAUT D'EMPILEMENT DANS DES COUCHES MINCES PREPAREES A PARTIR DE AU PUR TREMPETANAKA K; SHIMOMURA Y.1979; J. SCI. HIROSCHIMA UNIV., A; JPN; DA. 1979; VOL. 43; NO 1; PP. 1-23; BIBL. 15 REF.Article

AN X-RAY DIFFRACTION STUDY ON THE MICROSTRUCTURES OF A TERNARY ALLOY SYSTEM: CU-SN-ZN = ETUDE PAR DIFFRACTION DE RAYONS X DE LA MICROSTRUCTURE D'UN SYSTEME D'ALLIAGES TERNAIRES CU-SN-ZNHALDER SK; DE M; SEN GUPTA SP et al.1979; INDIAN J. PURE APPL. PHYS.; ISSN 0019-5596; IND; DA. 1979; VOL. 17; NO 8; PP. 492-496; BIBL. 20 REF.Article

ON THE NUCLEATION OF STACKING FAULT TETRAHEDRA = GERMINATION DE TETRAEDRES DE DEFAUTS D'EMPILEMENTHUSSEIN AA.1980; SCR. METALL.; ISSN 0036-9748; USA; DA. 1980; VOL. 14; NO 7; PP. 761-764; BIBL. 8 REF.Article

METHODES DE MESURE DES ENERGIES DE DEFAUT D'EMPILEMENT EN MICROSCOPIE ELECTRONIQUECLEMENT N.1978; J. MICR. SPECTROSC. ELECTRON.; FRA; DA. 1978; VOL. 3; NO 4; PP. 271-284; H.T. 3; ABS. ENG; BIBL. 45 REF.Article

ETUDE DU MACLAGE DANS LA DEFORMATION PLASTIQUE DE SOLUTIONS SOLIDES CU-AL MONOCRISTALLINES A MOYENNE ENERGIE DE DEFAUT = TWINNING DURING PLASTIC DEFORMATION OF MONOCRISTAL SOLID SOLUTION OF CU-AL WITH A MEAN DEFECT ENERGYTRANCHANT F; VERGNOL J; GRILHE J et al.1983; SCRIPTA METALLURGICA; ISSN 0036-9748; USA; DA. 1983; VOL. 17; NO 2; PP. 175-178; BIBL. 11 REF.Article

ENERGETIC CALCULATIONS CONCERNING THE A-DEFECT STRUCTURE AND FORMATION IN SILICONSCHNITTLER C; TEICHMANN G; KAUFMANN W et al.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; DDR; DA. 1981-12; VOL. 68; NO 2; PP. K135-K139; BIBL. 6 REF.Article

FORMATION OF FAULTED DEFECTS IN COPPER BY MOVING BOUNDARIESCLAREBROUGH LM; FORWOOD CT.1980; PHYS. STATUS SOLIDI, SECT. A, APPL. RES.; DDR; DA. 1980-08-16; VOL. 60; NO 2; PP. 409-415; BIBL. 8 REF.Article

THE PROPERTIES OF A NEAR SIGMA 9 GRAIN BOUNDARY. PT. 3:BOUNDARY DISSOCIATIONCLAREBROUGH LM; FORWOOD CT.1980; PHYS. STATUS SOLIDI, SECT. A, APPL. RES.; DDR; DA. 1980-07-16; VOL. 60; NO 1; PP. 51-57; BIBL. 10 REF.Article

GROWTH BEHAVIOR OF OXIDATION STACKING FAULTS AND MICRODEFECTS IN SILICON DURING HIGH-TEMPERATURE ANNEALING.KISHINO S; ISOMAE S; TAMURA M et al.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 6; PP. 3255-3258; BIBL. 28 REF.Article

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