Pascal and Francis Bibliographic Databases

Help

Search results

Your search

au.\*:("STALLHOFER P")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 52

  • Page / 3
Export

Selection :

  • and

EFFECTS OF UNIAXIAL STRESS ON THE CYCLOTRON RESONANCE IN INVERSION SI(100)STALLHOFER P; KOTTHAUS JP; ABSTREITER G et al.1979; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1979; VOL. 32; NO 8; PP. 655-658; BIBL. 16 REF.Article

SURFACE CYCLOTRON RESONANCE IN SI UNDER UNIAXIAL STRESS.STALLHOFER P; KOTTHAUS JP; KOCK JF et al.1976; SOLID STATE COMMUNIC.; G.B.; DA. 1976; VOL. 20; NO 5; PP. 519-522; BIBL. 16 REF.Article

Oxygen and carbon measurements on silicon slices by the IR methodSTALLHOFER, P; HUBER, D.Solid state technology. 1983, Vol 26, Num 8, pp 233-237, issn 0038-111XArticle

COMPARISON OF SHUBNIKOV-DE HAAS EFFECT AND CYCLOTRON RESONANCE ON SI(100) MOS TRANSISTORS UNDER UNIAXIAL STRESSGESCH H; DORDA G; STALLHOFER P et al.1979; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1979; VOL. 32; NO 7; PP. 543-546; BIBL. 14 REF.Article

Deep level luminescence related to thermal donors in siliconTAJIMA, M; STALLHOFER, P; HUBER, D et al.Japanese journal of applied physics. 1983, Vol 22, Num 9, pp L586-L588, issn 0021-4922Article

Determination of oxygen in silicon by photon activation analysis for calibration of the infrared absorptionRATH, H. J; STALLHOFER, P; HUBER, D et al.Journal of the Electrochemical Society. 1984, Vol 131, Num 8, pp 1920-1923, issn 0013-4651Article

Correlation between DLTS and TRXFA measurements of copper and iron contaminations in FZ and CZ silicon wafers ; application to gettering efficienciesHACKL, B; RANGE, K.-J; STALLHOFER, P et al.Journal of the Electrochemical Society. 1992, Vol 139, Num 5, pp 1495-1498, issn 0013-4651Article

High purity silicon VIII (Honolulu HI, 3-8 October 2004)Claeys, C.L; Watanabe, M; Falster, R et al.Proceedings - Electrochemical Society. 2004, issn 0161-6374, isbn 1-56677-418-7, XII, 438 p, isbn 1-56677-418-7Conference Proceedings

Iron and its detrimental impact on the nucleation and growth of oxygen precipitates during internal gettering processesHACKL, B; RANGE, K.-J; GORES, H. J et al.Journal of the Electrochemical Society. 1992, Vol 139, Num 11, pp 3250-3254, issn 0013-4651Article

Defect engineering and control in nanocrystalline siliconMILOVZOROV, D.Proceedings - Electrochemical Society. 2004, pp 226-233, issn 0161-6374, isbn 1-56677-418-7, 8 p.Conference Paper

Pairing reactions between substitutional and interstitial defects caused by the same transition metal in silicon float zone crystalsLEMKE, H; IRMSCHER, K.Proceedings - Electrochemical Society. 2004, pp 146-159, issn 0161-6374, isbn 1-56677-418-7, 14 p.Conference Paper

Application of electric current in growing silicon single crystalsWANG, Jong Hoe.Proceedings - Electrochemical Society. 2004, pp 3-11, issn 0161-6374, isbn 1-56677-418-7, 9 p.Conference Paper

A kinetic model for p-type doping in silicon epitaxy by CVDMEHTA, Bhavesh; MENG TAO.Proceedings - Electrochemical Society. 2004, pp 12-22, issn 0161-6374, isbn 1-56677-418-7, 11 p.Conference Paper

FTIR measurement of nitrogen in silicon using shuttle type sample stageWATANABE, Masaharu; TAKENAWA, Noriaki.Proceedings - Electrochemical Society. 2004, pp 121-131, issn 0161-6374, isbn 1-56677-418-7, 11 p.Conference Paper

Modeling of internal gettering for metal impurities by oxide precipitates in CZ-Si wafersSUEOKA, Koji.Proceedings - Electrochemical Society. 2004, pp 176-187, issn 0161-6374, isbn 1-56677-418-7, 12 p.Conference Paper

High purity silicon VI (Phoenix AZ, 22-27 October 2000)Claeys, C.L; Rai-Choudhury, P; Watanabe, M et al.SPIE proceedings series. 2000, isbn 1-56677-284-2, XIX, 695 p, isbn 1-56677-284-2Conference Proceedings

γ-ray diffraction studies of the perfection of large silicon single crystalsSCHNEIDER, J. R; GRAF, H. A; GONCALVES, O et al.Journal of crystal growth. 1987, Vol 80, Num 2, pp 225-240, issn 0022-0248Article

Morphology and stress investigations of surface and subsurface regions of plasma hydrogenated and annealed Czochralski siliconJOB, R; MA, Y; HUANG, Y. L et al.Proceedings - Electrochemical Society. 2004, pp 407-418, issn 0161-6374, isbn 1-56677-418-7, 12 p.Conference Paper

Formation mechanism of voids and oxide precipitates in silicon crystalsNAKAMURA, K; SAISHOJI, T; TOMIOKA, J et al.Proceedings - Electrochemical Society. 2004, pp 237-253, issn 0161-6374, isbn 1-56677-418-7, 17 p.Conference Paper

Formation and control of defects in nitrogen doped silicon crystalsHUBER, A; LAMBERT, U; HÄCKL, W et al.Proceedings - Electrochemical Society. 2004, pp 77-85, issn 0161-6374, isbn 1-56677-418-7, 9 p.Conference Paper

Hydrogen diffusion characterized by hydrogen enhanced thermal donor formation in p-type Czochralski silicon at temperatures between 350 and 450 °CHUANG, Y. L; MA, Y; JOB, R et al.Proceedings - Electrochemical Society. 2004, pp 419-427, issn 0161-6374, isbn 1-56677-418-7, 9 p.Conference Paper

Measurement of nitrogen concentration in CZ-Si below 1014/cm3 by IR absorption spectroscopyNAKATSU, M; HASHIMOTO, A; NATSUME, A et al.Proceedings - Electrochemical Society. 2004, pp 102-108, issn 0161-6374, isbn 1-56677-418-7, 7 p.Conference Paper

On the influence of nitrogen and carbon on the formation of dislocations in heavily doped silicon wafersWINKLER, R; KRAUTBAUER, R; PECH, R et al.Proceedings - Electrochemical Society. 2004, pp 55-59, issn 0161-6374, isbn 1-56677-418-7, 5 p.Conference Paper

Nitrogen in thin silicon wafers determined by infrared spectroscopyAKHMETOV, V. D; LYSYTSKIY, O; RICHTER, H et al.Proceedings - Electrochemical Society. 2004, pp 109-120, issn 0161-6374, isbn 1-56677-418-7, 12 p.Conference Paper

Improvement in the SIMS measurement of bulk nitrogen in siliconPARK, Byoung-Suk; WANG, L; HOCKETT, R. S et al.Proceedings - Electrochemical Society. 2004, pp 60-68, issn 0161-6374, isbn 1-56677-418-7, 9 p.Conference Paper

  • Page / 3