DOUBLE VELOCITY IMPATT DIODESADLERSTEIN MG; STATZ H.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 5; PP. 817-819; BIBL. 9 REF.Article

FREQUENCY INCREASE IN PULSED AVALANCHE DIODESSTATZ H; WALLAGE RN.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 7; PP. 1064-1067; BIBL. 8 REF.Article

INSULIN-ANTIKOERPER BEI DIABETES MELLITUS IM KINDESALTERSTOEGMANN W; STATZ H.1980; PAEDIATR. PAEDOL.; ISSN 0030-9338; AUT; DA. 1980; VOL. 15; NO 4; PP. 385-392; ABS. ENG; BIBL. 21 REF.Article

CONDUCTION CURRENT INJECTION DELAY IN RED GAAS IMPATT DIODESADLERSTEIN MG; STATZ H.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 3; PP. 234-236; BIBL. 13 REF.Article

AVALANCHE RESPONSE TIME IN GAAS AS DETERMINED FROM MICROWAVE ADMITTANCE MEASUREMENTSADLERSTEIN MG; MCCLYMONDS JW; STATZ H et al.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 7; PP. 808-811; BIBL. 12 REF.Article

SIGNAL AND NOISE PROPERTIES OF GALLIUM ARSENIDE MICROWAVE FIELD-EFFECT TRANSISTORS.PUCEL RA; HAUS HA; STATZ H et al.1975; ADV. ELECTRON. ELECTRON PHYS.; U.S.A.; DA. 1975; NO 8; PP. 195-265; BIBL. 1 P. 1/2Article

NOISE CHARACTERISTICS OF GALLIUM ARSENIDE FIELD-EFFECT TRANSISTORS. = CARACTERISTIQUES DE BRUIT DES TRANSISTORS A EFFET DE CHAMPS A L'ARSENIURE GALLIUMSTATZ H; HAUS H; PUCEL RA et al.1974; J.E.E.E. TRANS. ELECTRON. DEVICES; U.S.A.; DA. 1974; VOL. 21; NO 9; PP. 549-562; BIBL. 20 REF.Article

NOISE IN GALLIUM ARSENIDE AVALANCHE READ DIODES.STATZ H; PUCEL RA; SIMPSON JE et al.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 9; PP. 1075-1085; BIBL. 17 REF.Article

LASER GYRO AT QUANTUM LIMITDORSCHNER TA; HAUS HA; HOLZ M et al.1980; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1980; VOL. 16; NO 12; PP. 1376-1379; BIBL. 7 REF.Article

Frequency locking of modes in a ring laserHAUS, H. A; STATZ, H; SMITH, I. W et al.IEEE journal of quantum electronics. 1985, Vol 21, Num 1, pp 78-85, issn 0018-9197Article

On charge nonconservation in FET'sSMITH, I. W; STATZ, H; HAUS, H. A et al.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 12, pp 2565-2569, issn 0018-9383Article