au.\*:("STEGMULLER B")
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TISCHRECHNER-UNTERSTUETZTES BESTELLWESEN IM LABORATORIUMSBETRIEB - SYSTEMBESCHREIBUNG UND ERFAHRUNGSBERICHT = GESTION D'UN LABORATOIRE ET DE SES SERVICES - REPRESENTATION DU SYSTEME ET EXPERIENCEKNIEHL E; STEGMULLER B.1983; LABOR-MEDIZIN (GIT-VERLAG GIEBELER); ISSN 0170-205X; DEU; DA. 1983; VOL. 6; NO 4; PP. 250-256; 6 P.; ABS. ENG; BIBL. 3 REF.Article
ELASTANCE AND SERIES-RESISTANCE OF VARACTOR-DIODES UNDER LARGE-SIGNAL CONDITIONS = ELASTANCE ET RESISTANCE SERIE DE DIODES VARACTOR EN REGIME DE SIGNAUX FORTSSTEGMULLER B; HARTH W.1982; AEUE, ARCH. ELEKTRON. UEBERTRAGUNGSTECH.; ISSN 0001-1096; DEU; DA. 1982; VOL. 36; NO 4; PP. 173-176; ABS. GER; BIBL. 6 REF.Article
Threshold current analysis of InGaAsP-InP ridge-waveguide lasersAMANN, M.-C; STEGMULLER, B.IEE proceedings. Part J. Optoelectronics. 1986, Vol 133, Num 6, pp 341-349, issn 0267-3932Article
High-temperature and high-power performance of InGaAsP/InP ridge-waveguide laser diodesSTEGMÜLLER, B; HEINEN, J.AEU. Archiv für Elektronik und Übertragungstechnik. 1992, Vol 46, Num 2, pp 73-79, issn 0001-1096Article
Polarisation-dependent optical gain in ridge-waveguide laser diodesSTEGMÜLLER, B; AMANN, M.-C.Electronics Letters. 1989, Vol 25, Num 16, pp 1017-1018, issn 0013-5194, 2 p.Article
Polarization competition in quasi-index-guided laser diodesAMANN, M.-C; STEGMÜLLER, B.Journal of applied physics. 1988, Vol 63, Num 6, pp 1824-1830, issn 0021-8979Article
1.57 μm strained-layer quantum-well GaInAlAs Ridge-Waveguide laser diodes with high temperature (130°C) and ultrahigh-speed (17 GHz) performanceSTEGMÜLLER, B; BORCHERT, B; GESSNER, R et al.IEEE photonics technology letters. 1993, Vol 5, Num 6, pp 597-599, issn 1041-1135Article
FM noise of index-guided GaAlAs diode lasersSCHIMPE, R; STEGMÜLLER, B; HARTH, W et al.Electronics Letters. 1984, Vol 20, Num 5, pp 206-208, issn 0013-5194Article
GaInAsP twin-stripe lasers with asymmetrical waveguide channelsWOLF, T; KAPPELER, F; STEGMÜLLER, B et al.IEE proceedings. Part J. Optoelectronics. 1988, Vol 135, Num 1, pp 5-10, issn 0267-3932Article
Investigation of the capacitance of integrated DFB-EAMS with shared active layer for 40 GHz bandwidthPESCHKE, M; SARAVANAN, B; HANKE, C et al.Lasers and Electro-optics Society. 2004, isbn 0-7803-8557-8, 2Vol, Vol2, 673-674Conference Paper
Galvanized top heat spreader for improved CW-performance of up-side-up mounted MCRW-lasersSTEGMÜLLER, B; HONSBERG, M; LUY, J.-F et al.AEU. Archiv für Elektronik und Übertragungstechnik. 1985, Vol 39, Num 1, pp 63-65, issn 0001-1096Article
Surface emitting InGaAsP/InP distributed feedback laser diode at 1.53 μm with monolithic integrated microlensSTEGMÜLLER, B; WESTERMEIER, H; THULKE, W et al.IEEE Photonics technology letters. 1991, Vol 3, Num 9, pp 776-778Article
High performance 1.55 μm quantum-well metal-clad ridge-waveguide distributed feedback lasersBORCHERT, B; STEGMÜLLER, B; BAUMEISTER, H et al.Japanese journal of applied physics. 1991, Vol 30, Num 9B, pp L1650-L1652, issn 0021-4922, 2Article
Optimization of the wallplug-efficiency of laser diodes by an electro-optical-thermal black-box modelMÄRZ, R; BEHRINGER, M; HANKE, C et al.Optical and quantum electronics. 2005, Vol 37, Num 1-3, pp 63-75, issn 0306-8919, 13 p.Conference Paper