PROBLEMS OF THE FORMATION OF DISLOCATION STRUCTURES IN HETEROEPITAXIAL LAYERSSTENIN SI.1979; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1979; VOL. 55; NO 2; PP. 519-527; ABS. RUS; BIBL. 15 REF.Article

EQUILIBRIUM DISLOCATION CONFIGURATIONS IN HETEROSTRUCTURESTRUKHANOV EM; STENIN SI.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 66; NO 2; PP. 591-596; ABS. RUS; BIBL. 12 REF.Article

METHODE DE DETERMINATION PRECISE DES DISTANCES DES PLANS RETICULAIRES D'APRES LES DIAGRAMMES ELECTRONIQUES EN REFLEXIONPCHELYAKOV OP; STENIN SI.1978; KRISTALLOGRAFIJA; SUN; DA. 1978; VOL. 23; NO 5; PP. 1031-1032; BIBL. 5 REF.Article

INITIAL STAGE OF PLASTIC DEFORMATION OF SUBSTRATES IN HETEROSTRUCTURESTRUKHANOV EM; STENIN SI.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 66; NO 1; PP. 125-131; ABS. RUS; BIBL. 13 REF.Article

APPLICATION DU MICROSCOPE ELECTRONIQUE ET DE LA TOPOGRAPHIE AUX RAYONS X A L'ETUDE DE LA STRUCTURE DES MATERIAUX SEMI-CONDUCTEURS)STENIN SI; ASEEV AL.1975; IZVEST. SIBIR. OTDEL. AKAD. NAUK S.S.S.R., KHIM. NAUK; S.S.S.R.; DA. 1975; NO 2; PP. 136-160; BIBL. 2 P.Article

ETUDE DU SYSTEME GE-GES A L'AIDE DE LA THERMOGRAVIMETRIE ET DU MICROSCOPE ELECTRONIQUEIVANCHENKO VA; PCHELYAKOV OP; STENIN SI et al.1976; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1976; VOL. 12; NO 1; PP. 12-15; H.T. 1; BIBL. 10 REF.Article

THE FORMATION OF PARTIAL MISFIT DISLOCATIONS DURING HETEROEPITAXYGUSTAKOVSKII AK; STENIN SI; ZAKHAROV BG et al.1981; PHYS. STATUS SOLIDI(A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 57; NO 1; PP. 299-304; BIBL. 15 REF.Article

DISLOCATIONS AND STRESSES IN A CRYSTAL WITH AN ISLAND FILMTRUKHANOV EM; STENIN SI; NOSKOV AG et al.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 53; NO 2; PP. 433-440; ABS. RUS; BIBL. 16 REF.Article

DISLOCATION PROCESSES DURING PLASTIC DEFORMATION OF SI AND GE IN THE RANGE 0.50 TO 0.95 OF THE MELTING TEMPERATURE.ASEEV AL; GOLOBOKOV YN; STENIN SI et al.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 28; NO 1; PP. 355-364; ABS. RUSSE; BIBL. 22 REF.Article

POSSIBILITES DE CONTROLE DU TYPE DOMINANT DES DISLOCATIONS D'INCOMPATIBILITE EN HETEROEPITAXIEGUTAKOVSKIJ AK; PCHELYAKOV OP; STENIN SI et al.1980; KRISTALLOGRAFIJA; ISSN 0023-4761; SUN; DA. 1980; VOL. 25; NO 4; PP. 806-814; BIBL. 17 REF.Article

THE EFFECT OF IMPLANTATION TEMPERATURE ON THE MECHANISM OF MISFIT DISLOCATION FORMATION.KALININ VV; GERASIMENKO NN; STENIN SI et al.1978; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1978; VOL. 45; NO 2; PP. 377-385; ABS. RUSSE; BIBL. 15 REF.Article

SPECIFIC FEATURES OF THE DISLOCATION STRUCTURE OF GERMANIUM IN THE SYSTEM GERMANIUM-PYROLITIC SILICA FILM.TRUKHANOV EM; GOROKHOV EB; STENIN SI et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 33; NO 1; PP. 435-442; H.T. 5; ABS. RUSSE; BIBL. 14 REF.Article

INFLUENCE DES IMPURETES SUR L'ENERGIE DES DEFAUTS D'EMPILEMENT DANS L'ARSENIURE DE GALLIUMASTAKHOV VM; VASIL'EVA LF; SIDOROV YU G et al.1980; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1980; VOL. 22; NO 2; PP. 477-482; BIBL. 14 REF.Article

FORMATION OF DISLOCATION STRUCTURE IN SILICON LAYERS ON NON-ORIENTING SUBSTRATES.MEYER S; ASEEV AL; KLIMENKO AG et al.1975; KRISTALL U. TECH.; DTSCH.; DA. 1975; VOL. 10; NO 3; PP. 247-257; ABS. RUSSE; BIBL. 23 REF.Article

PHASE BIDIMENSIONNELLE ORDONNEE A LA SURFACE DE SEPARATION GERMANIUM-SULFURE DE GERMANIUMKLAUA M; MAJNEL M; PCHELYAKOV OP et al.1981; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1981; VOL. 23; NO 9; PP. 2560-2566; BIBL. 9 REF.Article

FORMATION DE DEFAUTS DANS LES CONDITIONS DE DIFFUSION ACCELEREE PAR L'IRRADIATIONKALININ VV; ASEEV AL; GERASIMENKO NN et al.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 1; PP. 28-36; BIBL. 13 REF.Article

EFFETS D'IRRADIATION A HAUTE TEMPERATURE DANS LE GERMANIUM LORS D'UNE IRRADIATION SOUS LE MICROSCOPE ELECTRIQUE A HAUTE TENSIONPCHELYAKOV OP; ASEEV AL; SMIRNOV LS et al.1976; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1976; VOL. 10; NO 8; PP. 1472-1479; BIBL. 9 REF.Article

SUPRACONDUCTIVITE DES COUCHES MINCES A CONDENSATION RAPIDEPETROSYAN VI; VASIN OI; STENIN SI et al.1977; PIS'MA ZH. EKSPER. TEOR. FIZ.; S.S.S.R.; DA. 1977; VOL. 26; NO 1; PP. 10-13; BIBL. 5 REF.Article

EFFECT OF BUFFER LAYERS ON THE DISLOCATION STRUCTURE OF HETERO-EPITAXIAL SYSTEMSBOLKHOVITYANOV YB; VAULIN YD; GUTAKOVSKY AK et al.1981; CRYST. RES. TECHNOL.; DDR; DA. 1981; VOL. 16; NO 8; PP. 921-929; ABS. RUS; BIBL. 17 REF.Article

NATURE ET CONDITIONS DE FORMATION DES DEFAUTS EN BATONNETS DANS LE SILICIUMASEEV AL; BOLOTOV VV; SMIRNOV LS et al.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 7; PP. 1302-1307; BIBL. 14 REF.Article

MICROMORPHOLOGY AND DEFECTS OF NON-DOPED GALLIUM ARSENIDE LAYERSASTAKHOV VM; TOROPOV AI; STENIN SI et al.1978; KRISTALL U. TECH.; DDR; DA. 1978; VOL. 13; NO 11; PP. 1305-1312; ABS. RUS; BIBL. 10 REF.Article

Using a heat pump plant in heating networksSTENIN, V. A.Thermal engineering. 1997, Vol 44, Num 5, pp 372-373, issn 0040-6015Article

Molecular beam epitaxy of semiconductor, dielectric and metal films = Epitaxie par faisceau moléculaire de couches minces métalliques, diélectriques et de semiconducteursSTENIN, S. I.Vacuum. 1986, Vol 36, Num 7-9, pp 419-426, issn 0042-207XConference Paper

INVESTIGATION OF GERMANIUM FILMS AND GE-SI INTERFACE STRUCTURE BY TRANSMISSION ELECTRON MICROSCOPY.ASEEV AL; VASIN OI; STENIN SI et al.1975; THIN SOLID FILMS; NETHERL.; DA. 1975; VOL. 30; NO 1; PP. 73-82; BIBL. 23 REF.Article

THE SELECTION OF THE HEAT TREATMENT CONDITIONS FOR COATED ELECTRODES FOR ARE WELDING = CHOIX DES PARAMETRES DU TRAITEMENT THERMIQUE DES ELECTRODES ENROBEESSTENIN VA.1981; WELDG PRODUCT.; ISSN 0043-230X; GBR; DA. 1981; VOL. 28; NO 6; PP. 34-35; BIBL. 7 REF.; DE RUSSE EN ANGLAIS; LOC. IS;[SVAR. PROIZVOD.; SUN; DA. 1981; NO 6; PP. 32-33]Article