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INSTALLATION POUR LE TIRAGE CONTINU DE LINGOTS CRISTALLINS PROFILES A PARTIR D'UN BAIN FONDUGOGICHAJSHVILI SH M; GOGISHVILI O SH; LALYKIN SP et al.1978; PRIOBRY TEKH. EKSPER.; SUN; DA. 1978; NO 3; PP. 226-227; BIBL. 2 REF.Article

PARTICULARITES DE LA FORMATION D'INCLUSIONS DE SIC DANS DES RUBANS DE SILICIUM FABRIQUES PAR LA METHODE DE STEPANOVABROSIMOV NV; BRANTOV SK; TATARCHENKO VA et al.1982; IZV. AKAD. NAUK SSSR, NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1982; VOL. 18; NO 2; PP. 181-184; BIBL. 14 REF.Article

CROISSANCE DE RUBANS DE SILICIUM PAR LA METHODE DE STEPANOVELETSKAN NI; BUZYNIN AN; ZAICHKO UV et al.1978; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1978; VOL. 14; NO 4; PP. 603-606; BIBL. 19 REF.Article

Production of sapphire tubes for high-pressure sodium lamps using the Stepanov method at high rates of growthBORODIN, V. A; STERIOPOLO, T. A; TATARCHENKO, V. A et al.Crystal research and technology (1979). 1985, Vol 20, Num 2, pp 159-166, issn 0232-1300Article

Obtention de tubes de silicium par étirage de la masse fondue au moyen d'un système de guidageABROSIMOV, N. V; BRANTOV, S. K; TATARCHENKO, V. A et al.Fizika i himiâ obrabotki materialov. 1983, Num 2, pp 75-78, issn 0015-3214Article

OBTENTION DES MONOCRISTAUX DE AGCL PAR LA METHODE DE STEPANOVKOPTEV YU I.1977; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1977; VOL. 13; NO 3; PP. 550-551Article

SOVESHCHANIYE PO POLUCHENIYU PROFILIROVANNYKH KRISTALLOV I IZDELIJ SPOSOBOM STEPANOVA I IKH PRIMENENIYU V NARODNOM KHOZYAJSTVE. 7. MATERIALY; LENINGRAD; 1976. = CONGRES SUR L'OBTENTION DE CRISTAUX ET PRODUITS PROFILES PAR LA METHODE DE STEPANOV ET LEUR APPLICATION A L'ECONOMIE POPULAIRE. 7. MATIERES; LENINGRAD; 19761976; IZVEST. AKAD. NAUK S.S.S.R., SER. FIZ.; S.S.S.R.; DA. 1976; VOL. 40; NO 7; PP. 1322-1552; BIBL. DISSEM.Conference Paper

A novel bi-directional step-flow growth mode : C₆₀ on Ge(100) and GaAs(110)DUNPHY, J. C; KLYACHKO, D; XU, H et al.Surface science. 1997, Vol 383, Num 2-3, pp L760-L765, issn 0039-6028Article

The effect of the pressure difference across the free surface on the static meniscus shape in the case of ribbon growth by edge-defined film-fed growth (E.F.G.) methodBALIN, St; BALINT, A. M.Journal of crystal growth. 2008, Vol 311, Num 1, pp 32-37, issn 0022-0248, 6 p.Article

Particularités de la formation de «cristaux en boutons» pendant la croissance de rubans de silicium interdendritiquesDASHEVSKIJ, M. YA; KIBIZOV, R. V.Kristallografiâ. 1984, Vol 29, Num 5, pp 995-1000, issn 0023-4761Article

SHAPED MELT LOWERING (SML): A NOVEL GROWTH TECHNIQUE PERMITTING K_EFF=1MIYAZAWA S.1982; JOURNAL OF CRYSTAL GROWTH; ISSN 0022-0248; NLD; DA. 1982; VOL. 60; NO 2; PP. 331-337; BIBL. 14 REF.Article

Impurity microsegregation due to periodic changes in the temperature and pulling rate of crystal grown by the Stepanov methodZHDANOV, A. V; NIKOLAEVA, L. P; RED'KIN, B. S et al.Journal of engineering physics and thermophysics. 1995, Vol 68, Num 3, pp 419-426, issn 1062-0125Article

RELATION ENTRE L'ANGLE DE CROISSANCE ET LA FORME DE LA SURFACE LATERALE D'UN CRISTAL EN COURS DE CROISSANCESATUNKIN GA; TATARCHENKO VA; TSEJTLIN EM et al.1979; KRISTALLOGRAFIJA; SUN; DA. 1979; VOL. 24; NO 1; PP. 134-142; BIBL. 16 REF.Article

OBTENTION ET PROPRIETES DE CRISTAUX DE FLUORURE DE BARYUM CONSOLIDESSIMUN EA; KARPOVICH VK; VAL'KOVSKIJ SN et al.1978; OPT.-MEKH. PROMYSHL.; SUN; DA. 1978; VOL. 45; NO 8; PP. 48-49; BIBL. 3 REF.Article

POSSIBILITE DE PREDETERMINER L'HETEROGENEITE D'IMPURETES DANS LES MONOCRISTAUX DE CORINDONBELAYA AN; DOBROVINSKAYA ER; LITVINOV LA et al.1981; KRISTALLOGRAFIJA; ISSN 0023-4761; SUN; DA. 1981; VOL. 26; NO 1; PP. 164-170; BIBL. 11 REF.Article

VERS LA FABRICATION INDUSTRIELLE DE CRISTAUX EN PLAQUESRICARD J.1978; TOUTE ELECTRON; FRA; DA. 1978; NO 432; PP. 61-64; BIBL. 12 REF.Article

Microstructure characterisation and oxygen sensing properties of Al₂O₃-ZrO₂-Y₂O₃ shaped eutectic compositesZHUIYKOV, Serge.Sensors and materials. 2000, Vol 12, Num 3, pp 117-132, issn 0914-4935Article

Development of the Stepanov (edge-defined film-fed growth) method : variable shaping technique and local dynamic shaping techniqueBORODIN, V. A; SIDOROV, V. V; ROSSOLENKO, S. N et al.Journal of crystal growth. 1999, Vol 198-99, pp 201-209, issn 0022-0248, 1Conference Paper

Growth of GaAs plate crystal by the liquid encapsulated Stepanov methodFUJII, T; EGUCHI, M; FUKUDA, T et al.Journal of crystal growth. 1988, Vol 87, Num 4, pp 573-577, issn 0022-0248Article

Sampling and generalized almost periodic extension of functionsFERREIRA, P. J. S. G.IEEE transactions on circuits and systems. 2, Analog and digital signal processing. 1999, Vol 46, Num 4, pp 475-478, issn 1057-7130Article

A generalization of an inequality of StepanovTAKACS, L.Journal of combinatorial theory. Series B. 1990, Vol 48, Num 2, pp 289-293, issn 0095-8956Article

Pressure difference across the free surface of a stable static meniscus in a possible Ge_1-xsi_x ribbon growth by edge-defined film-fed growth (E.F.G.) techniqueBALINT, A. M; BALINT, St; SZABO, R et al.Computational materials science. 2009, Vol 44, Num 4, pp 1327-1331, issn 0927-0256, 5 p.Article

Growth of sapphire core-doped fibersKURLOV, V. N; ROSSOLENKO, S. N; BELENKO, S. V et al.Journal of crystal growth. 1998, Vol 191, Num 3, pp 520-524, issn 0022-0248Article

Thermoelastic stresses in the tubes pulled from the melt by Stepoanov's methodSZDANOV, A. V; BORODIN, V. A; NIKOLAEVA, L. P et al.Fizika i himiâ obrabotki materialov. 1993, Num 2, pp 142-147, issn 0015-3214Article