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DEVICE QUALITY N-TYPE LAYERS PRODUCED BY ION IMPLANTATION OF TE AND S INTO GAAS.STOLTE CA.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 585-587; BIBL. 2 REF.Conference Paper

BACKGATING IN GAAS MESFET'SKOCOT C; STOLTE CA.1982; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 7; PP. 1059-1064; BIBL. 19 REF.Article

THERMAL BEHAVIOR OF LASER-ANNEALED GAAS STUDIED BY HELIUM BACKSCATTERING SPECTROSCOPYAMANO J; PIANETTA PA; STOLTE CA et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 10; PP. 948-949; BIBL. 11 REF.Article

NONALLOYED OHMIC CONTACTS TO ELECTRON-BEAM-ANNEALSED SE-ION-IMPLANTED GAASPIANETTA PA; STOLTE CA; HANSEN JL et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 7; PP. 597-599; BIBL. 18 REF.Article

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