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Results 1 to 25 of 26

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A ZNTE THIN FILM MEMORY DEVICEBURGELMAN M.1980; ELECTROCOMPON. SCI. TECHNOL.; ISSN 0305-3091; GBR; DA. 1980; VOL. 7; NO 1-3; PP. 93-96; BIBL. 9 REF.Article

AMORPHER HALBLEITERSPEICHERWERKSTOFF NIEDRIGER SCHALTFELDSTAERKE. = MEMOIRE A MATERIAU SEMICONDUCTEUR AMORPHE A CHAMP DE COMMUTATION DE FAIBLE INTENSITEKAS HH.1977; NATURWISSENSCHAFTEN; DTSCH.; DA. 1977; VOL. 64; NO 8; PP. 434-435; BIBL. 4 REF.Article

CHALCOGENIDE MEMORY MATERIALSHOLMBERG SH; SHANKS RR; BLUHM VA et al.1979; J. ELECTRON. MATER.; USA; DA. 1979; VOL. 8; NO 3; PP. 333-344; BIBL. 17 REF.Article

RESEAU LOCAL DE TRANSMISSION DE DONNEES AVEC COMMUTATION DE MEMOIREZAVADSKIJ VM.1980; AVTOMAT. VYCHISLIT. TEKH.; SUN; DA. 1980; NO 5; PP. 83-85; BIBL. 3 REF.Article

SOFTWARE GENERATION TOOLS FOR BANK SWITCHED MEMORYPEDERSEN TJ.1979; COMPSAC 79. INTERNATIONAL COMPUTER SOFTWARE AND APPLICATIONS CONFERENCE. 3/1979/CHICAGO IL; USA; NEW YORK: IEEE; DA. 1979; PP. 612-617; BIBL. 3 REF.Conference Paper

INFLUENCE DE LA MATIERE DES ELECTRODES SUR L'EFFET DE COMMUTATION DANS LES COUCHES TRES RESISTANTES DE SELENIURE DE ZINCOGINSKAS A; CHESNIS A; SHIKTOROV N et al.1977; LITOV. FIZ. SBOR.; S.S.S.R.; DA. 1977; VOL. 17; NO 3; PP. 347-353; ABS. LITU. ANGL.; BIBL. 15 REF.Article

EFFET DE COMMUTATION AVEC MEMOIRE DANS LES MONOCRISTAUX DE GA2TE3ALIEV SI; NIFTIEV GM; PLIEV FI et al.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 3; PP. 579-583; BIBL. 6 REF.Article

MEMORY SWITCHING IN AMORPHOUS CD-SB FILMSKAWAMURA Y; KASHIWABA Y; IKEDA T et al.1982; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 3; PART. 2; PP. 429-433; BIBL. 19 REF.Article

MEMORY SWITCHING IN GEO2 FILMSKHAN MI; HOGARTH CA; KHAN MN et al.1979; INTERNATION. J. ELECTRON.; GBR; DA. 1979; VOL. 46; NO 2; PP. 215-216; BIBL. 4 REF.Article

THE THRESHOLD CHARACTERISTICS OF CHALCOGENIDE-GLASS MEMORY SWITCHESOWEN AE; ROBERTSON JM; MAIN C et al.1979; J. NON-CRYST. SOLIDS; NLD; DA. 1979; VOL. 32; NO 1-3; PP. 29-52; BIBL. 21 REF.Article

A ZNTE-THIN FILM MEMORY DEVICEBURGELMAN M.1979; EUROPEAN HYBRID MICROELECTRONICS CONFERENCE. 2/1978/GHENT; NLD; PIJNACKER: DUTCH EFFICIENCY BUREAU; DA. 1979; PP. 189-196; BIBL. 9 REF.Conference Paper

BRUIT DE FOND DANS LES HETEROJONCTIONS A COUCHES MINCES SE-AG2SE QUI PRESENTENT UN EFFET DE COMMUTATION AVEC MEMOIREPRIKHOD'KO A; LIBERIS YU; BAREJKIS V et al.1977; LITOV. FIZ. SBOR.; S.S.S.R.; DA. 1977; VOL. 17; NO 1; PP. 79-84; ABS. LITU. ANGL.; BIBL. 15 REF.Article

MEMORY SWITCHING IN AMORPHOUS GE-S-GA THIN FILMSMYCIELSKI W; LIPINSKI A; IVANOVA Z et al.1980; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1980; VOL. 69; NO 2; PP. L9-L10; BIBL. 5 REF.Article

FURTHER STUDIES OF MEMORY SWITCHING IN COPPER-CALCIUM-PHOSPHATE GLASS DEVICESMORIDI GR; HOGARTH CA.1978; INTERNATION. J. ELECTRON.; GBR; DA. 1978; VOL. 44; NO 3; PP. 297-304; BIBL. 10 REF.Article

ELECTRICAL CONDUCTION IN METAL/IMPLANTED SIO2/SI STRUCTURESRAGAIE HF.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 14; PP. 565-566; BIBL. 8 REF.Article

MEMORY EFFECTS IN GATE FILMS.ROMEO N; SBERVEGLIERI G; TARRICONE L et al.1977; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1977; VOL. 23; NO 1; PP. 7-11; BIBL. 17 REF.Article

THRESHOLD AND MEMORY SWITCHING IN AMORPHOUS SELENIUM THIN FILMSJONES G; COLLINS RA.1979; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1979; VOL. 53; NO 1; PP. 339-350; ABS. GER; BIBL. 33 REF.Article

Chemical band approach to the structures of chalcogenide glasses with reversible switching propertiesBICERANO, J; OVSHINSKY, S. R.Journal of non-crystalline solids. 1985, Vol 74, Num 1, pp 75-84, issn 0022-3093Article

ELECTRICAL TRANSPORT IN AMORPHOUS CARBON FILMS.MORISAKI H; YAZAWA K.1977; ELECTR. ENGNG JAP.; U.S.A.; DA. 1977; VOL. 96; NO 4; PP. 8-14; BIBL. 20 REF.Article

The relationship between the dynamic remanent coercivity and the viscosity and irreversible susceptibility in magnetic mediaSTINNETT, S. M; HARRELL, J. W; KHAPIKOV, A. F et al.IEEE transactions on magnetics. 2000, Vol 36, Num 1, pp 148-153, issn 0018-9464, 1Conference Paper

Langevin micromagnetics of recording media using subgrain discretizationSCHREFL, Thomas; SCHOLZ, Werner; SÜSS, Dieter et al.IEEE transactions on magnetics. 2000, Vol 36, Num 5, pp 3189-3191, issn 0018-9464, 1Conference Paper

Clock-frequency and temperature margins of a high-temperature superconductor delay-line memoryHATTORI, W; TAHARA, S.Superconductor science & technology (Print). 1999, Vol 12, Num 11, pp 915-917, issn 0953-2048Conference Paper

Current-controlled negative-resistance behaviour and memory switching in bulk As-Te-Se glassesCHATTERJEE, R; ASOKAN, S; TITUS, S. S. K et al.Journal of physics. D, Applied physics (Print). 1994, Vol 27, Num 12, pp 2624-2627, issn 0022-3727Article

Memory switching in thermally grown titanium oxide filmsANSARI, A. A.Journal of physics. D, Applied physics (Print). 1985, Vol 18, Num 5, pp 911-917, issn 0022-3727Article

100-nm lateral size ferroelectric memory cells fabricated by electron-beam direct writing : Ferroelectric films: materials, characterization and applicationsALEXE, M; HARNAGEA, C; ERFURTH, W et al.Applied physics. A, Materials science & processing (Print). 2000, Vol 70, Num 3, pp 247-251, issn 0947-8396Article

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