POLITICAL AND NON-POLITICAL IDEALS OF ENGLISH PRIMARY AND SECONDARY SCHOOL CHILDRENSTRADLING R; ZURICK E.SOCIOL. REV. 1971, Vol 19, Num 2, PP. 203-27Article

EMERGENCE OF POLITICAL THOUGHT AMONG YOUNG ENGLISHMEN: A CONFLICT PERSPECTIVESTRADLING R; ZUREIK E. T.POLITICAL STUDIES. 1973, Vol 21, Num 3, pp 285-300Article

Magneto-optical studies of n-GaAs under high hydrostatic pressureWASILEWSKI, Z; STRADLING, R. A.Semiconductor science and technology. 1986, Vol 1, Num 4, pp 264-274, issn 0268-1242Article

Prognosis in malignant mesothelioma related to MIB 1 proliferation index and histological subtypeBEER, T. W; BUCHANAN, R; MATTHEWS, A. W et al.Human pathology. 1998, Vol 29, Num 3, pp 246-251, issn 0046-8177Article

Far infrared magneto-optics of InAs_1-xP_x alloys under hydrostatic pressureSOTOMAYOR TORRES, C. M; STRADLING, R. A.Semiconductor science and technology. 1987, Vol 2, Num 6, pp 323-328, issn 0268-1242Article

C₃H₅⁺ ISOMERS: EVIDENCE FOR THE EXISTENCE OF LONG-LIVED ALLYL AND 2-PROPENYL CATIONS IN THE GAS PHASEBOWERS MT; SHUYING L; KEMPER P et al.1980; J. AMER. CHEM. SOC.; USA; DA. 1980; VOL. 102; NO 14; PP. 4830-4832; BIBL. 17 REF.Article

Comments on the identification of high-order spectral lines of donors in semiconductors in intermediate magnetic fieldsARMISTEAD, C. J; STRADLING, R. A; WASILEWSKI, Z et al.Semiconductor science and technology. 1989, Vol 4, Num 7, pp 557-564, issn 0268-1242, 8 p.Article

High pressure cell for magneto-optical experimentsWASILEWSKI, Z; POROWSKI, S; STRADLING, R. A et al.Journal of physics. E. Scientific instruments. 1986, Vol 19, Num 6, pp 480-482, issn 0022-3735Article

Shubnikov-de Haas measurements in indium antimonideSTAROMLYNSKA, J; FINLAYSON, D. M; STRADLING, R. A et al.Journal of physics. C. Solid state physics. 1983, Vol 16, Num 33, pp 6373-6386, issn 0022-3719Article

In situ Raman spectroscopy of the selective etching of antimonides in GaSb/AlSb/InAs heterostructuresGATZKE, C; WEBB, S. J; FOBELETS, K et al.Semiconductor science and technology. 1998, Vol 13, Num 4, pp 399-403, issn 0268-1242Article

Alloy effects on the Raman spectra of Si_1-xGe_x and calibration protocols for alloy compositions based on polarization measurementsRATH, S; HSIEH, M. L; ETCHEGOIN, P et al.Semiconductor science and technology. 2003, Vol 18, Num 6, pp 566-575, issn 0268-1242, 10 p.Article

Fourier transform spectroscopic studies of a germanium hot hole laserLEWIS, D. E; STRADLING, R. A; BIRCH, J. R et al.Infrared physics. 1992, Vol 33, Num 4, pp 293-299, issn 0020-0891Article

Donor identification in neutron-transmutation-doped GaAs and InPNAJDA, S. P; HOLMES, S; STRADLING, R. A et al.Semiconductor science and technology. 1989, Vol 4, Num 9, pp 791-796, issn 0268-1242, 6 p.Article

New bound spin-flip transitions in n-InSbKUCHAR, F; MEISELS, R; STRADLING, R. A et al.Solid state communications. 1984, Vol 52, Num 5, pp 487-489, issn 0038-1098Article

Simple calculation of the Landau levels of narrow-gap semiconductors in the Kane modelASKENAZY, S; WALLACE, P. R; STRADLING, R. A et al.Physics letters. A. 1984, Vol 106, Num 4, pp 184-186, issn 0375-9601Article

High-mobility InSb thin films on GaAs (001) substrate grown by the two-step growth processDEBNATH, M. C; ZHANG, T; ROBERTS, C et al.Journal of crystal growth. 2004, Vol 267, Num 1-2, pp 17-21, issn 0022-0248, 5 p.Article

Boundary scattering in wet-etched InAs/GaSb heterostructure wires : with and without magnetic fieldRAHMAN, F; THORNTON, T. J; GALLAGHER, B. L et al.Semiconductor science and technology. 1999, Vol 14, Num 5, pp 478-483, issn 0268-1242Article

Raman scattering by plasmon-phonon modes in highly doped n-IsAs grown by molecular beam epitaxyLI, Y. B; FERGUSON, I. T; STRADLING, R. A et al.Semiconductor science and technology. 1992, Vol 7, Num 9, pp 1149-1154, issn 0268-1242Article

Donor-related structure observed in the magnetoresistance of high-purity n-GaAs and InP observed under warm electron conditions and at low temperaturesHOLMES, S. N; WANG, P. D; COWAN, D. A et al.Semiconductor science and technology. 1990, Vol 5, Num 2, pp 150-158, issn 0268-1242, 9 p.Article

First observation of a two-dimensional electron gas at the interface of α-Sn/InSb (100) grown by molecular beam epitaxyYUEN, W. T; LIU, W. K; HOLMES, S. N et al.Semiconductor science and technology. 1989, Vol 4, Num 9, pp 819-823, issn 0268-1242Article

Far-infrared spectroscopic identification of D^- states in GaAs, InP and InSbNAJDA, S. P; ARMISTEAD, C. J; TRAGER, C et al.Semiconductor science and technology. 1989, Vol 4, Num 6, pp 439-454, issn 0268-1242Article

Etude des surstructures de la magnétorésistance de InSb = Study of overstructures in the magnetoresistance of InSbGALIBERT, J; PERRIER, P; ASKENAZY, S et al.Canadian journal of physics (Print). 1987, Vol 65, Num 5, pp 468-475, issn 0008-4204Article

Polarization-dependent Raman spectroscopic protocols for calibration of the alloy composition and strain in bulk and thin-film Si_1-xGe_xRATH, S; GRIGORESCU, C; HSIEH, M. L et al.Semiconductor science and technology. 2000, Vol 15, Num 2, pp L1-L5, issn 0268-1242Article

Photoluminescence studies of n-i-p-i- superlattices in InSb and InAs : suppression of Auger recombination due to type II potentialsTANG, P. J. P; PULLIN, M. J; PHILLIPS, C. C et al.Semiconductor science and technology. 1995, Vol 10, Num 4, pp 476-482, issn 0268-1242Article

RHEED studies of the surface morphology of α-Sn pseudomorphically grown on InSb(100) by MBE―a new kind of non-polar/polar systemYUEN, W. T; LIU, W. K; JOYCE, B. A et al.Semiconductor science and technology. 1990, Vol 5, Num 5, pp 373-384, issn 0268-1242Article