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LA COMMANDE PAR CHAMP DE COMMUTATION A L'AIDE DE STRUCTURES HOMOGENES MULTIPLESMEL'NIKOV MS.1973; IZVEST. VYSSH. UCHEBN. ZAVED., GEOD. AEROFOTOS'EMKA; S.S.S.R.; DA. 1973; NO 6; PP. 634-639; BIBL. 5 REF.Article

SUR LE MECANISME POSSIBLE DES PHENOMENES DE DEGRADATION DANS LES STRUCTURES MNOSAGAFONOV AI; PLOTNIKOV AF; SELEZNEV VN et al.1981; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1981; VOL. 10; NO 2; PP. 127-131; BIBL. 4 REF.Article

MOS PROPERTIES1978; REV. PHYS. APPL.; FRA; DA. 1978; VOL. 13; NO 12; PP. 837-843; ABS. FRE; BIBL. DISSEM.Conference Paper

ETUDE DU MECANISME DE RECHARGE DES PIEGES DANS UNE STRUCTURE MNOSPLOTNIKOV AF; SELEZNEV VN; FERCHEV GP et al.1976; MIKROELEKTRONIKA; S.S.S.R.; DA. 1976; VOL. 5; NO 2; PP. 132-137; BIBL. 6 REF.Article

MESURE DES VARIATIONS DES CARACTERISTIQUES PHYSIQUES D'UNE COUCHE MINCE EN AL2O3 DANS UNE STRUCTURE MAS DANS LA DIRECTION PERPENDICULAIRE A LA COUCHE MINCEKOMIYA Y; TARUI Y; FUJISHIRO T et al.1976; BULL. ELECTROTECH. LAB.; JAP.; DA. 1976; VOL. 40; NO 4-5; PP. 298-301; ABS. ANGL.; BIBL. 6 REF.Article

SPURIOUS SIGNALS GENERATED BY ELECTRON TUNNELING ON LARGE REFLECTOR ANTENNAS. = SIGNAUX PARASITES PRODUITS PAR EFFET TUNNEL DES ELECTRONS SUR LES GRANDES ANTENNES A REFLECTEURSHIGA WH.1975; PROC. I.E.E.E.; U.S.A.; DA. 1975; VOL. 63; NO 2; PP. 306-313; BIBL. 10 REF.Article

EFFET DE COMMUTATION DU TYPE S DANS LES SYSTEMES TUNNEL: SEMICONDUCTEUR - DIELECTRIQUE - SEMICONDUCTEUR DOPES A LA NAPHTALENEIGNAT'EV OM.1975; MIKROELEKTRONIKA; S.S.S.R.; DA. 1975; VOL. 4; NO 3; PP. 254-257; BIBL. 12 REF.Article

ETUDE DE LA STRUCTURE REELLE DU SYSTEME AL-SIN4-AL FORMEBURDOVITSIN VA; GALANSKIJ VL; ZAMOZHSKIJ VD et al.1975; IZVEST. VYSSH. UCHEBN. ZAVED., FIZ.; S.S.S.R.; DA. 1975; VOL. 18; NO 12; PP. 71-73; H.T. 2; BIBL. 5 REF.Article

RECENT PROGRESS IN MNOS MEMORY TECHNOLOGY.KENDALL JT.1974; MICROELECTRON. AND RELIABIL.; G.B.; DA. 1974; VOL. 13; NO 5; PP. 413-414; BIBL. 3 REF.; (SEMINEX SEMIN.; LONDON; 1974)Conference Paper

RESOLUTION OF ELECTROOPTIC LIGHT VALVES.ROACH WR.1974; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1974; VOL. 21; NO 8; PP. 453-459; BIBL. 15 REF.Article

IMPACT IONIZATION CURRENT IN MOS DEVICESLATTIN WW; RUTLEDGE JL.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 9; PP. 1043-1046; BIBL. 12 REF.Serial Issue

SWITCHING MECHANISM IN THIN-OXIDE MNOS DEVICESGORDON N; JOHNSON WC.1973; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 3; PP. 253-256; BIBL. 9 REF.Serial Issue

VARIABLE CAPACITANCE MIS MICROSTRIP LINES = LIGNES A MICROBANDES MIS A CAPACITANCE VARIABLEGUNTHER U; VOGES E.1973; ARCH. ELEKTRON. UBERTRAG.-TECH.; DTSCH.; DA. 1973; VOL. 27; NO 3; PP. 131-139; ABS. ALLEM.; BIBL. 26 REF.Serial Issue

FORMATION DE LA CHARGE DANS LE SIO2 LORS DE L'IRRADIATION D'UNE STRUCTURE MOS DANS UN REACTEURPATRIKEEV LN; PODLEPETSKIJ BI; POPOV VD et al.1973; MIKROELEKTRONIKA; S.S.S.R.; DA. 1973; VOL. 2; NO 1; PP. 65-67; BIBL. 9 REF.Serial Issue

SUPERCONDUCTING TRANSITION TEMPERATURE OF SN-PDNI SANDWICHSATO M.1972; J. PHYS. SOC. JAP.; JAP.; DA. 1972; VOL. 33; NO 6; PP. 1722; BIBL. 5 REF.Serial Issue

PROCESSUS TRANSITOIRES DANS LES STRUCTURES M-D-M A BASE DE VERRE DU SYSTEME V2O5-P2O5KALYGINA VM; GAMAN VI.1972; IZVEST. VYSSH. UCHEBN. ZAVED., FIZ.; S.S.S.R.; DA. 1972; VOL. 15; NO 8; PP. 31-35; BIBL. 3 REF.Serial Issue

SUBTHRESHOLD DEGRADATION IN MNOS TECHNOLOGYCHAUDHARI PK.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 1; PP. 170-175; BIBL. 13 REF.Article

TWO-DIMENSIONAL PLASMONS IN MULTI-LAYERED STRUCTURESCHAPLIK AV; KRASHENINNIKOV MV.1980; SOLID STATE COMMUNIC.; ISSN 0038-1098; USA; DA. 1980; VOL. 35; NO 2; PP. 189-190; BIBL. 5 REF.Article

MEMORY LOSS IN MNOS CAPACITORS.MAES HE; VAN OVERSTRAETEN RJ.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 2; PP. 667-671; BIBL. 11 REF.Article

NOVEL TECHNIQUE FOR MOS PULSE CAPACITANCE MEASUREMENTS IN C(V) AND C(T) MODE.BRAUNIG D; RICHTER G.1976; REV. SCI. INSTRUM.; U.S.A.; DA. 1976; VOL. 47; NO 3; PP. 341-344; BIBL. 6 REF.Article

EFFETS PHOTOVOLTAIQUES DE TRANSITIONS INTERBANDES DANS LES STRUCTURES METAL/PHOTOCONDUCTEUR/METAL.PIEL A; MURRAY H.1976; REV. PHYS. APPL.; FR.; DA. 1976; VOL. 11; NO 3; PP. 397-402; ABS. ANGL.; BIBL. 19 REF.Article

MODULATEURS MOS A TENSION CONSTANTE A DERIVE DU ZERO REDUITEMOROZOV VP.1976; MIKROELEKTRONIKA; S.S.S.R.; DA. 1976; VOL. 5; NO 2; PP. 198-200; BIBL. 5 REF.Article

INTERFACE CHARGE CHARACTERISTICS OF MOS STRUCTURES WITH DIFFERENT METALS ON STEAM GROWN OXIDES.KAR S.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 9; PP. 723-732; BIBL. 24 REF.Article

PROCESSUS DE TRANSITION ET DE CAPACITE DES STRUCTURES MOS AVEC LA SURFACE INVERTIE DU SEMI-CONDUCTEURKOLESHKO VM; KAPLAN G YA; GURSKIJ LI et al.1975; VESCI AKAD. NAVUK B.S.S.R., FIZ.-TEKH. NAVUK; S.S.S.R.; DA. 1975; NO 1; PP. 101-104; BIBL. 2 REF.Article

EFFECT OF TEMPERATURE AND VOLTAGE SWEEP RATE ON C-V CHARACTERISTICS OF MIS CAPACITORS.WEI LS; SIMMONS JC.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 10; PP. 1021-1028; BIBL. 8 REF.Article

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