CHARGE DISTRIBUTION EN METAL/AL₂O₃/SIO₂/SI. STRUCTURESEL DESSOUKY A; BALK P.1981; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1981; VOL. 75; NO 2; PP. 195-197; BIBL. 6 REF.Article

DISCRIMINATING ANALYSIS OF NON-UNIFORM CHARGE DISTRIBUTION FROM SURFACE STATES IN MAOS DIODES.NAKAGIRI M.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; NO 2; PP. 319-325; BIBL. 5 REF.Article

CIRCUIT ARRAY AND SYSTEM OF MAOS TYPE FULLY DECODED ELECTRICALLY ALTERABLE READ ONLY MEMORY-IC.YAMAGUCHI T; SATO S.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 9; PP. 1414-1420; BIBL. 10 REF.Article

ELECTRICAL PROPERTIES OF MAOS STRUCTURES AS REVEALED BY CONDUCTANCE TECHNIQUEHAMANO K; OHTA K.1972; JAP. J. APPL. PHYS.; JAP.; DA. 1972; VOL. 11; NO 7; PP. 1053; BIBL. 4 REF.Serial Issue

INFLUENCE OF AL₂O₃ DEPOSITION TEMPERATURE ON CHARGE-STORAGE AND RETENTION IN MA(O)S STRUCTURESTSUJIDE T; IIDA K.1972; JAP. J. APPL. PHYS.; JAP.; DA. 1972; VOL. 11; NO 11; PP. 1599-1604; BIBL. 17 REF.Serial Issue

CONDUCTION AND CHARGING BEHAVIOR IN MA(O)S-SYSTEMS.KAMPSHOFF H; STEPHANY F; BALK P et al.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 11; PP. 1761-1766; BIBL. 26 REF.Article

MEMORY BEHAVIOR OF METAL-PLASMA-ANODIZED AL₂O₃ AND SIO₂-SEMICONDUCTOR (MAOS) CAPACITORSPAPPU RV; BOOTHROYD AR.1973; APPL. PHYS. LETTERS; U.S.A.; DA. 1973; VOL. 22; NO 2; PP. 72-74; BIBL. 8 REF.Serial Issue

ANALYSIS OF STORED CHARGE VOLATILITY AN MAOS MEMORY ELEMENTANAND KV; SAMPURAN SINGH.1978; THIN SOLID FILMS; NLD; DA. 1978; VOL. 48; NO 3; PP. 361-366; BIBL. 6 REF.Article

STABLE CHARGE STORAGE OF M.A.O.S. DIODES ON GAAS BY NEW ANODIC OXIDATION.BAYRAKTAROGLU B; HANNAH SJ; HARTNAGEL HL et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 2; PP. 45-46; BIBL. 6 REF.Article

PHOTOINJECTION DANS L'INFRAROUGE ET LE VISIBLE DES ELECTRONS DANS DES COUCHES ISOLANTES DE MEMOIRES MISKOMIYA Y; SAKAMOTO T; SUZUKI E et al.1976; BULL. ELECTROTECH. LAB.; JAP.; DA. 1976; VOL. 40; NO 4-5; PP. 280-285; ABS. ANGL.; BIBL. 15 REF.Article