THEORY OF ZERO BIAS ANOMALIES DUE TO PARAMAGNETIC IMPURITIESGUPTA HM.1973; J. PHYS. C; G.B.; DA. 1973; VOL. 6; NO 4; PP. 686-698; BIBL. 24 REF.Serial Issue

PROCESSUS TRANSITOIRES DANS LES STRUCTURES M-D-M A BASE DE VERRE DU SYSTEME V₂O₅-P₂O₅KALYGINA VM; GAMAN VI.1972; IZVEST. VYSSH. UCHEBN. ZAVED., FIZ.; S.S.S.R.; DA. 1972; VOL. 15; NO 8; PP. 31-35; BIBL. 3 REF.Serial Issue

DETERMINATION OF THE DISPERSION RELATION IN TUNNEL STRUCTURES: INFLUENCE OF THE BARRIER SHAPE AND VALIDITY OF THE WKB APPROXIMATIONGUNDLACH KH; KADLEC J.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 7; PP. 787-792; BIBL. 19 REF.Serial Issue

RESPONSE TIME OF METAL-INSULATOR-METAL TUNNEL JUNCTIONSNAGAE M.1972; JAP. J. APPL. PHYS.; JAP.; DA. 1972; VOL. 11; NO 11; PP. 1611-1621; BIBL. 5 REF.Serial Issue

THERMALLY ASSISTED TUNNELLING IN DIELECTRIC FILMS (II)POLANCO JI; ROBERTS GG.1972; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1972; VOL. 13; NO 2; PP. 603-606; ABS. ALLEM.; BIBL. 9 REF.Serial Issue

KRONIG-PENNEY TYPE CALCULATIONS FOR ELECTRON TUNNELING THROUGH THIN DISORDERED DIELECTRIC FILMSSTOLL E; SCHNEIDER T.1972; SOLID STATE COMMUNIC.; G.B.; DA. 1972; VOL. 11; NO 10; PP. 1327-1329; ABS. ALLEM.; BIBL. 1 REF.Serial Issue

ELECTRICALLY REPROGRAMMABLE NONVOLATILE SEMICONDUCTOR MEMORY WITH MNMOOS (METAL-NITRIDE-MOLYDENUM-OXIDE-SILICON) STRUCTURE.RAI Y; SASAMI T; HASEGAWA Y et al.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 313-316; BIBL. 4 REF.Conference Paper

EFFET DE MEMOIRE DANS LES SYSTEMES METAL-VERRE DE BOROSILICATE DE PB-METALGAMAN VI; REZNIKOV BA; GALANSKIJ VL et al.1972; IZVEST. VYSSH. UCHEBN. ZAVED., FIZ.; S.S.S.R.; DA. 1972; VOL. 15; NO 7; PP. 57-61; BIBL. 13 REF.Serial Issue

DETECTION OF OPTICAL AND INFRARED RADIATION WITH DC-BIASED, ELECTRON-TUNNELING, METAL-BARRIER-METAL DIODESFARIS SM; GUSTAFSON KT; WIESNER JC et al.1973; I.E.E.E.J. QUANTUM ELECTRON.; U.S.A.; DA. 1973; VOL. 9; NO 7; PP. 737-745; BIBL. 18 REF.Serial Issue

ETUDE EXPERIMENTALE DU MECANISME DE PASSAGE DU COURANT "PAR RELAIS" DANS LE SYSTEME METAL-DIELECTRIQUE-METALTIMAN BL; KARPOVA AP.1973; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1973; VOL. 7; NO 2; PP. 230-235; BIBL. 17 REF.Serial Issue

COURANTS D'ELECTRONS INJECTES DANS LES DIELECTRIQUESKHRISTOV SG.1972; IZVEST. INST. ELEKTRON., SOFIJA; BALG.; DA. 1972; VOL. 5; PP. 5-24; ABS. RUSSE ANGL.; BIBL. 36 REF.Serial Issue

EMISSION OF ELECTRONS FROM MIM SYSTEMS: ANGULAR DISTRIBUTIONMAY J; HRACH R.1973; CZECHOSL. J. PHYS.; CZECHOSL.; DA. 1973; VOL. 23; NO 2; PP. 217-224; BIBL. 10 REF.Serial Issue

EMISSION OF ELECTRONS FROM MIM SYSTEMS: DISCUSSION OF PROCESSES IN THE CATHODEHRACH R.1973; CZECHOSL. J. PHYS.; CZECHOSL.; DA. 1973; VOL. 23; NO 2; PP. 234-242; BIBL. 11 REF.Serial Issue

EMISSION OF ELECTRONS FROM MIM SYSTEMS: ENERGY DISTRIBUTIONSHRACH R; MAY J.1973; CZECHOSL. J. PHYS.; CZECHOSL.; DA. 1973; VOL. 23; NO 2; PP. 225-233; BIBL. 12 REF.Serial Issue

INFLUENCE OF THE PROPERTIES OF THE MATERIALS ON JUNCTION TUNNELLING CHARACTERISTICSBURRAFATO G; FARACI G; GIAQUINTA G et al.1972; J. PHYS. C; G.B.; DA. 1972; VOL. 5; NO 16; PP. 2179-2191; BIBL. 14 REF.Serial Issue

ENERGY ANGULAR DISTRIBUTIONS OF ELECTRONS EMITTED FROM MIM SYSTEMSHRACH R.1973; THIN SOLID FILMS; NETHERL.; DA. 1973; VOL. 15; NO 1; PP. 65-69; BIBL. 12 REF.Serial Issue

TUNNELING RESULTS WITH NI DOPED ELECTRODES PREPARED AT 80 KEL SEMARY MA; KAAHWA Y; ROGERS JS et al.1973; SOLID STATE COMMUNIC.; G.B.; DA. 1973; VOL. 12; NO 7; PP. 593-595; ABS. ALLEM.; BIBL. 9 REF.Serial Issue

CONDUCTANCE REDUCTION IN AL-I-AL JUNCTIONS DOPED WITH FE IMPURITIESEL SEMARY MA; ROGERS JS.1972; PHYS. LETTERS, A; NETHERL.; DA. 1972; VOL. 42; NO 1; PP. 79-80; BIBL. 10 REF.Serial Issue

INTERNAL PHOTOEMISSION IN SAPPHIRE SUBSTRATESVISWANATHAN CR; LOO RY.1972; APPL. PHYS. LETTERS; U.S.A.; DA. 1972; VOL. 21; NO 8; PP. 370-372; BIBL. 6 REF.Serial Issue

SUR LA PRODUCTION DE LA CONDUCTIVITE DANS LES COUCHES POLYMERESDUBININA EM; SAAD EHL'DIN M; ELOVIKOV SS et al.1972; VEST. MOSKOV. UNIV., 3; S.S.S.R.; DA. 1972; VOL. 13; NO 4; PP. 400-406; BIBL. 6 REF.Serial Issue

NEGATIVE RESISTANCE IN ORGANIC MONOMOLECULAR LAYERS: EXPERIMENTS ON TRIODESGUNDLACH KH; KADLEC J.1972; THIN SOLID FILMS; NETHERL.; DA. 1972; VOL. 13; NO 2; PP. 225-230; BIBL. 4 REF.Serial Issue

EFFECT OF BAND STRUCTURE ON THE VOLTAGE-CURRENT CHARACTERISTICS OF METAL-INSULATOR-METAL TUNNEL JUNCTIONSSARNOT SL; DUBEY PK.1972; SOLID-STATE ELECTRON.; G.B.; DA. 1972; VOL. 15; NO 7; PP. 745-752; BIBL. 46 REF.Serial Issue

ON THE GEOMETRY OF THE INSULATING BARRIER IN THIN FILM TUNNEL JUNCTIONSADLER JG; KREUZER HJ.1972; CANAD. J. PHYS.; CANADA; DA. 1972; VOL. 50; NO 22; PP. 2842-2844; ABS. FR.; BIBL. 4 REF.Serial Issue

A METHOD OF INVESTIGATION OF HOT ELECTRON TRANSPORT THROUGH THIN METAL FILMS USING THE METAL-BASE TRIODE CONFIGURATIONANTULA J.1972; THIN SOLID FILMS; NETHERL.; DA. 1972; VOL. 13; NO 1; PP. 93-97; BIBL. 14 REF.Serial Issue

CHARACTERISTICS OF METAL-INSULATOR-METAL POINT-CONTACT DIODES USED FOR TWO-LASER MIXING AND DIRECT FREQUENCY MEASUREMENTSBRADLEY CC; EDWARDS GJ.1973; I.E.E.E. J. QUANTUM ELECTRON.; U.S.A.; DA. 1973; VOL. 9; NO 5; PP. 548-549; BIBL. 7 REF.Serial Issue