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DYNAMIQUE D'ALIGNEMENT DE LA CHARGE LORS DE L'IRRADIATION D'UNE STRUCTURE MDSVINETSKIJ VL; CHAJKA GE; SHEVCHENKO ES et al.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 8; PP. 1478-1482; BIBL. 6 REF.Article

CIRCUIT SWITCHING ANALYSIS FOR OPTICALLY EXCITED METAL-INSULATOR (TUNNEL)-SILICON THYRISTOR (MIST)MOUSTAKAS S; DELL JM; CALLIGARO RB et al.1981; IEE PROC., PART I; ISSN 0143-7100; GBR; DA. 1981; VOL. 128; NO 3; PP. 92-96; BIBL. 15 REF.Article

PHOTOCAPACITIVE MIS INFRARED DETECTORS.SHER A; CROUCH RK; LU SSM et al.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 11; PP. 713-715; BIBL. 5 REF.Article

CAPACITE DE LA STRUCTURE METAL-DIELECTRIQUE-SEMICONDUCTEURKONSTANTINOV OV; MEZRIN OA.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 6; PP. 1063-1069; BIBL. 10 REF.Article

MIS SCHOTTKY BARRIER PARAMETERS OF A1/MESO-TETRAPHENYL-PORPHINATOMAGNESIUM (II)/AG CELLYAMASHITA K; KIHARA N.1981; CHEM. LETT.; ISSN 0366-7022; JPN; DA. 1981; NO 4; PP. 467-468; BIBL. 5 REF.Article

STUDIES OF M-I-S TYPE SOLAR CELLS FABRICATED ON SILICON.SHEVENOCK S; FONASH S; GENNECZKO J et al.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 211-212; BIBL. 7 REF.Conference Paper

EFFECT OF TEMPERATURE AND VOLTAGE SWEEP RATE ON C-V CHARACTERISTICS OF MIS CAPACITORS.WEI LS; SIMMONS JC.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 10; PP. 1021-1028; BIBL. 8 REF.Article

ON THE ELECTRICAL PROPERTIES OF COMPOUND SEMICONDUCTOR INTERFACES IN METAL/INSULATOR/SEMICONDUCTOR STRUCTURES AND THE POSSIBLE ORIGIN OF INTERFACE STATESHASEGAWA H; SAWADA T.1983; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1983; VOL. 103; NO 1-2; PP. 119-140; BIBL. 79 REF.Article

METHODE D'OPTIMISATION DES CIRCUITS RADIOELECTRONIQUESKHOTYANOV BM; YANSHIN AA.1975; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; S.S.S.R.; DA. 1975; VOL. 18; NO 6; PP. 93-98; BIBL. 3 REF.Article

THEORIE DE L'EFFET PHOTOGALVANIQUE DANS LES STRUCTURES A BARRIERE SUPERFICIELLE AVEC CONTACTS DE SCHOTTKYGIL'MAN BI; TRET'YAKOV AP.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 7; PP. 1320-1324; BIBL. 19 REF.Article

ELECTRON EMISSION OF METALS INTO INSULATORS.VODENICHAROV CM.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 29; NO 1; PP. 223-230; ABS. ALLEM.; BIBL. 18 REF.Article

EFFET D'UN MICROCLAQUAGE D'AVALANCHE DANS LA ZONE DE CHARGE D'ESPACE DE CONDENSATEURS MDSDENISYUK VA; ZAKHAROV VP; POPOV VM et al.1975; MIKROELEKTRONIKA; S.S.S.R.; DA. 1975; VOL. 4; NO 1; PP. 47-49; BIBL. 6 REF.Article

ENREGISTREMENT OPTIQUE D'IMAGE ET EVOLUTION DE LA CHARGE DANS UNE STRUCTURE OPTIQUE MDSPOSPELOV VV; RYABOKON VN; SVIDZINSKIJ KK et al.1974; MIKROELEKTRONIKA; S.S.S.R.; DA. 1974; VOL. 3; NO 6; PP. 475-481; BIBL. 10 REF.Article

INFLUENCE DES TRAITEMENTS THERMIQUES DE CHAMP SUR LA DIFFUSION SUPERFICIELLE DANS LES STRUCTURES MDSABUL SURUR MA; KORSHUNOV AB; NOVOTOTSKIJ VLASOV YU F et al.1974; MIKROELEKTRONIKA; S.S.S.R.; DA. 1974; VOL. 3; NO 6; PP. 548-550; BIBL. 10 REF.Article

ETUDE DES PHENOMENES D'HYSTERESIS DANS LES STRUCTURES AL-SIO2-GEVOLKOV SA; GOROKHOV EB; NEIZVESTNYJ IG et al.1975; MIKROELEKTRONIKA; S.S.S.R.; DA. 1975; VOL. 4; NO 3; PP. 248-253; BIBL. 6 REF.Article

DEPLETION WIDTHS OF THE METAL-INSULATOR SEMICONDUCTOR (MIS) STRUCTURECHEIN WEI JEN; CHUNG LEN LEE; TAN FU LEI et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 10; PP. 949-954; BIBL. 9 REF.Article

FIELD-INDUCED TUNNEL DIODE IN INDIUM ANTIMONIDE.MARGALIT S; SHAPPIR J; KIDRON I et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 9; PP. 3999-4001; BIBL. 7 REF.Article

NICHTLINEARER GATESTROM DES INDUKTIV RUECKGEKOPPELTEN MISFET-OSZILLATORS IN SOURCE-SCHALTUNG. = COURANT DE GRILLE NON LINEAIRE DE L'OSCILLATEUR MISFET AVEC REALISATION INDUCTIVE DANS LE CIRCUIT SOURCEGAD H.1975; NACHR.-TECH. Z.; DTSCH.; DA. 1975; VOL. 28; NO 2; PP. 59-62; ABS. ANGL.; BIBL. 12 REF.Article

THEORY OF HETEROSTRUCTURE INVERSION-MODE METAL-INSULATOR-SEMICONDUCTOR FIELD EFFECT TRANSISTORSKOBAYASHI T.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2795-2806; BIBL. 26 REF.Article

THEORIE DES ETATS DE SURFACE ET DE LA CONDUCTIVITE DANS LES STRUCTURES METAL-DIELECTRIQUE-SEMICONDUCTEURGERGEL VA; SURIS RA.1983; ZURNAL EKSPERIMENTAL'NOJ I TEORETICESKOJ FIZIKI; ISSN 0044-4510; SUN; DA. 1983; VOL. 84; NO 2; PP. 719-736; ABS. ENG; BIBL. 13 REF.Article

ETUDE DE LA FIABILITE DU DIELECTRIQUE-PORTE DES STRUCTURES METAL-DIELECTRIQUE-SEMICONDUCTEURLASHEVSKIJ RA; FILARETOV GA; SHAPIRO LA et al.1980; MIKROELEKTRONIKA; SUN; DA. 1980; VOL. 9; NO 4; PP. 347-354; BIBL. 12 REF.Article

LOW-TEMPERATURE IRRADIATION EFFECTS IN SIO2-INSULATED MIS DEVICES.HARARI E; WANG S; ROYCE BSH et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 3; PP. 1310-1317; BIBL. 23 REF.Article

TEMPERATURE DEPENDENCE OF CURRENT FLOWS IN NONDEGENERATE MIS TUNNEL DIODES.SHEWCHUN J; GREEN MA.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 12; PP. 5179-5184; BIBL. 15 REF.Article

QUELQUES PROPRIETES DE COUCHES DE NITRURE DE SILICIUM SUR GERMANIUMBOGATYREV VA; KAMENKOVICH EA; NEIZVESTNYJ IG et al.1975; MIKROELEKTRONIKA; S.S.S.R.; DA. 1975; VOL. 4; NO 1; PP. 56-60; BIBL. 18 REF.Article

Anodic oxide metal-insulator-semiconductor structures on n-type InSbCHEN, C. W; LILE, D. L.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1989, Vol 7, Num 5, pp 1122-1125, issn 0734-211X, 4 p.Article

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