RADIATION EFFECTS ON THIN-OXIDE MOS CAPACITORS CAUSED BY ELECTRON BEAM EVAPORATION OF ALUMINUMHAMASAKI M.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 299-303; BIBL. 16 REF.Article

EFFECT OF HIGH FIELD STRESSES ON INTERFACE STATES OF N-MOS CAPACITORSJOURDAIN M; SALACE G; PETIT C et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 251-257; BIBL. 21 REF.Article

CHARGE MOTION IN SILICON METAL/OXIDE/SEMICONDUCTOR STRUCTURES. IISZABO R; NEMETH SALLAY M; SZEP IC et al.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 94; NO 2; PP. 143-148; BIBL. 18 REF.Article

ANOMALOUS BEHAVIOUR IN PULSED MOS CAPACITORS AND GATED DIODES DUE TO LOCALISED DEFECTSRABBANI KS; LAMB DR.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 366-368; BIBL. 3 REF.Article

ON THRESHOLD AND FLAT-BAND VOLTAGES FOR MOS DEVICES WITH POLYSICILICON GATE AND NONUNIFORMLY DOPED SUBSTRATEMARSHAK AH; SHRIVASTAVA R.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 361-364; BIBL. 9 REF.Article

THE EFFECT OF TEMPERATURE ON THE C-V AND G-V CHARACTERISTICS OF SI-SIO₂ METAL STRUCTURESABHAI MANSINGH; SRIVASTAVA RK.1983; INTERNATIONAL JOURNAL OF ELECTRONICS THEORETICAL & EXPERIMENTAL; ISSN 0020-7217; GBR; DA. 1983; VOL. 54; NO 6; PP. 877-886; BIBL. 12 REF.Article

ETUDE PAR UNE METHODE DE DEPOLARISATION THERMOSTIMULEE DE L'EFFET DE L'ADSORPTION DE L'EAU SUR LES PROPRIETES ELECTROPHYSIQUES DES STRUCTURES MOSBEKERIS YU YA.1980; IZV. AKAD. NAUK LATV. SSR, SER. FIZ. TEH. NAUK; ISSN 0321-1673; SUN; DA. 1980; NO 5; PP. 53-56; ABS. ENG; BIBL. 8 REF.Article

ELECTRON POWER LOSS IN THE (100) N CHANNEL OF A SIMETAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR. II: INTERSUBBAND PHONON SCATTERINGKROWNE CM.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2455-2467; BIBL. 22 REF.Article

SI-SIO₂ INTERFACE STATES BASED ON OPTICALLY ACTIVATED CONDUCTANCE TECHNIQUESINGH RJ; SRIVASTAVA RS.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 319-323; BIBL. 17 REF.Article

DISPOSITIF DE REFERENCE TEMPORELLE A STRUCTURE MOS AVEC ELECTRODE RESISTIVENEGODENKO ON; MIROSHNICHENKO SP; SUKHINOV AI et al.1982; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1982; VOL. 11; NO 3; PP. 229-230; BIBL. 4 REF.Article

IMPROVED STACKED-STRUCTURE OXIDE BY LASER ANNEALINGYARON G; HESS LD.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 4; PP. 284-286; BIBL. 8 REF.Article

EVIDENCE FOR IMPACT-IONIZED ELECTRON INJECTION IN SUBSTRATE OF N-CHANNEL MOS STRUCTURESMATSUNAGA J; KOHYAMA S.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 4; PP. 335-337; BIBL. 9 REF.Article

TECHNIQUE FOR INCREASING THE GAIN-BANDWITH PRODUCT OF N-M.O.S. AND P-M.O.S. INTEGRATED INVERTERS.TSIVIDIS YP.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 14; PP. 421-422; BIBL. 3 REF.Article

POUR REALISER DES ECONOMIES D'ENERGIE: LA MEMOIRE STATIQUE MOS AVEC ALIMENTATION PULSEE.GASCHET C.1977; ELECTRON. APPL. INDUSTR.; FR.; DA. 1977; NO 241; PP. 20-21Article

A SHORT CHANNEL MOS MODEL INCORPORATING SUBSTHRESHOLD AND AVALANCHE MULTIPLICATION CURRENTS.GUPTA VK; SCHWARTZ AW.1977; IN: ANNU. ASILOMAR CONF. CIRCUITS, SYST., COMPUT. 10; PACIFIC GROVE, CALIF.; 1976; NORTH HOLLYWOOD, CALIF.; WESTERN PERIODICALS; DA. 1977; PP. 122-126; BIBL. 24 REF.Conference Paper

COS/MOS DIVIDERS WITH SYMMETRICAL OUTPUTS.SUMMERS GJ; JONES P.1976; NEW ELECTRON.; G.B.; DA. 1976; VOL. 9; NO 3; PP. 40-44 (3P.).Article

FIXED CHARGE IN CR-METALLIZED MOS CAPACITORS. = CHARGE FIXEE DANS DES CONDENSATEURS MOS METALLISES AVEC CRLEWICKI G.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 4; PP. 1552-1559; BIBL. 12 REF.Article

MEMORY TYPES MULTIPLY, MICROPROCESSOR FAMILIES GROW.ALTMAN L.1976; ELECTRONICS; U.S.A.; DA. 1976; VOL. 49; NO 22; PP. 76-82 (5P.)Article

PHOTOCURRENT IN FIELD-INDUCED JUNCTIONS.TONG KY; LAM YW.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 5; PP. 422-424; BIBL. 2 REF.Article

THEORY OF OSCILLATORY G FACTOR IN AN MOS INVERSION LAYER UNDER STRONG MAGNETIC FIELDS.ANDO T; UEMURA Y.1974; J. PHYS. SOC. SOC. JAP.; JAP.; DA. 1974; VOL. 37; NO 4; PP. 1044-1052; BIBL. 17 REF.Article

ETUDE DES DOMAINES LOCAUX DE CHARGE NEGATIVE DANS LE SYSTEME MOSSHIRSHOV YU M; FROLOV OS; GAL'KA IM et al.1974; MIKROELEKTRONIKA; S.S.S.R.; DA. 1974; VOL. 3; NO 4; PP. 332-336; BIBL. 8 REF.Article

A VERSATILE QUAD DECADE COUNTER ON AN MOS SINGLE CHIPWATSON N.1972; CONTROL AND INSTRUMENT.; G.B.; DA. 1972; VOL. 4; NO 10; PP. 46-47Serial Issue

MODERATE INVERSION IN MOS DEVICESTSIVIDIS Y.1982; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 11; PP. 1099-1104; BIBL. 4 REF.Article

INFLUENCE DES PROCESSUS TUNNEL DE GENERATION SUR LA RELAXATION DE LA CAPACITE DES STRUCTURES MDSV'YUKOV LA; SURIS RA.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 10; PP. 1768-1773; BIBL. 11 REF.Article

A MECHANISM FOR ENDURANCE FAILURE IN METAL-NITRIDE-OXIDE-SEMICONDUCTOR DEVICE STRUCTURESPRYOR RW.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 5; PP. 3703-3704; BIBL. 6 REF.Article